#GaN – Page 2

SweGaN and Chalmers University demonstrate high-voltage GaN power devices with a high breakdown voltage of >1600V and low leakage current of 22nA/mm on QuanFINE® epitaxial solutions

Leslie Johnsen2022-12-16T10:41:04+01:00

SweGaN and Chalmers University demonstrate high-voltage GaN power devices with a high breakdown voltage [...]

SweGaN and Chalmers University demonstrate high-voltage GaN power devices with a high breakdown voltage of >1600V and low leakage current of 22nA/mm on QuanFINE® epitaxial solutionsLeslie Johnsen2022-12-16T10:41:04+01:00

SweGaN brings its unique GaN-on-SiC epitaxial solutions to joint ESA project aiming Ka-band GaN MMICs for satellite antennas

SweGaN brings its unique GaN-on-SiC epitaxial solutions to joint ESA project aiming Ka-band GaN MMICs for satellite antennas

Leslie Johnsen2021-03-24T18:14:38+01:00

SweGaN brings its unique GaN-on-SiC epitaxial solutions to joint ESA project aiming Ka-band [...]

SweGaN brings its unique GaN-on-SiC epitaxial solutions to joint ESA project aiming Ka-band GaN MMICs for satellite antennasLeslie Johnsen2021-03-24T18:14:38+01:00