SweGaN brings its unique GaN-on-SiC epitaxial solutions to joint ESA project aiming Ka-band GaN MMICs for satellite antennas

  • Developing high-efficiency Ka-band GaN MMICs utilizing buffer-free QuanFINE® epitaxial materials from SweGaN

Linköping, Sweden, March 25th, 2021: SweGaN AB, manufacturer of custom-made GaN-on-SiC epitaxial wafers for components and devices for telecom, satellite, defense and power electronics announces it is partnering with Ferdinand-Braun-Institut (FBH) and University of Bristol in a European Space Agency project “Kassiopeia” that includes a focus on SweGaN’s QuanFINE® GaN-on-SiC epitaxial materials to help boost the device efficiency for Ka band applications.

The technology will be highly relevant for the devices used in beam steering antennas for satellite communications, 5G base stations as well as radar applications.

With the ambition of continuously advancing space technology, the cooperation combines key European expertise to enable high-efficiency and high-performance Ka-band GaN MMICs (Monolithic microwave integrated circuits). The Kassopeia project, led and coordinated by FBH, is developing and demonstrating Ka-band MMICs using novel epitaxy, processing, and circuit concepts towards highly efficient GaN and AlN devices. The goal of the Kassiopeia initiative is harnessing leading technology to create a unique European offering, from the SiC substrates to GaN epi, to power amplifiers.

SweGaN is contributing its unique buffer-free solution for GaN-on-SiC epiwafers, QuanFINE®, and brings its expertise in epitaxial layer design and optimization for the project. SweGaN will also supply in-house developed semi-insulating SiC substrates for evaluation. The SweGaN activities are financially supported by Swedish National Space Agency (Rymdstyrelsen).

  • The epiwafer specialist currently provides epitaxial material to leading manufacturers of components and devices for satellite communication, telecom, and defense applications, plus power electronic for electric vehicles, solar inverters and more. 

-“We are excited to partner in this ESA-aligned project with the prestigious GaN research groups in Europe, FBH and Uni. of Bristol, shares SweGaN CTO, Jr-Tai Chen. SweGaN will bring its proprietary QuanFINE® buffer-free manufacturing process for GaN-on-SiC epiwafers to significantly boost innovation at the material level for Ka band devices.”

”Harnessing our combined expertise, the strategic development project will further enhance SweGaN’s long-term market strategy and product innovation – and provide significant benefits to our global customer base,” continues Dr. Chen.   

– “We are excited to collaborate with SweGaN and FBH to understand, optimize and exploit the improved thermal management potential of the buffer free GaN-on-SiC for transistor applications, and to apply our unique expertise in assessing thermal transport in semiconductor devices” says Professor Martin Kuball, Royal Academy of Engineering Chair in Emerging Technologies, at the University of Bristol. 

Bringing together key European expertise, the selected consortium partners are internationally recognized in their niche fields and provide expert knowledge of their specific technology and characterization techniques. 

  • FBH´s unique contribution is its Iridium sputter-gate technology which reduces dynamic losses (gate lagging) up to 2 times less than competing institutional and industrial technologies. The groundbreaking technology provides advantages in device reliability which are particularly important for space borne devices. Additionally, FBH has one of the best equipped labs in Europe.
  • SweGaN is recognized for providing GaN epitaxial wafers for Sub-6 GHz and mm-wave transistors with a significantly low thermal boundary resistance and limited trapping effects – based on SweGaN’ proprietary buffer-free approach.
  • The University of Bristol’s research is specialized in direct thermal measurements on active GaN transistors by using micro-Raman thermography and advanced devices characterizations and modeling.

Kassiopeia is under the ESA ARTES Advanced Technology Programme: “European Ka-band high power solid-state technology for active antennas”.

Additional information on the joint Kassiopeia project can be found in recent press release from FBH, Bundling unique European expertise for spaceborne devices”.


About SweGaN

SweGaN provides a unique solution for GaN-on-SiC epiwafers based on its ground-breaking epitaxial growth technology for manufacturers of RF components and devices for satellite, communications, and defense organizations and for power device makers. The high performance of SweGaN QuanFINE® material enables our customers to quickly adapt to the evolving challenges of next-generation high power and high frequency devices, and to create future-oriented solutions. For more information, visit us as www.swegan.se and LinkedIn.

About Ferdinand-Braun-Institut

Ferdinand-Braun-Institut, Leibniz-Institut fuer Hoechstfrequenztechnik (FBH) researches electronic and optical components, modules and systems based on compound semiconductors. These devices are key enablers that address the needs of today’s society in fields like communications, energy, health, and mobility. Specifically, FBH develops light sources from the visible to the ultra-violet spectral range: high-power diode lasers with excellent beam quality, UV light sources and hybrid laser systems. Applications range from medical technology, high-precision metrology, and sensors to optical communications in space and integrated quantum technology. In the field of microwaves, FBH develops high-efficiency multi-functional power amplifiers, and millimeter wave frontends targeting energy-efficient mobile communications as well as car safety systems. The FBH has a strong international reputation and ensures rapid transfer of technology by working closely with partners in industry and research. The institute has a staff of 340 employees and a budget of 40.4 million euros. It is a member of the Leibniz Association and part of »Research Fab Microelectronics Germany«. www.fbh-berlin.de/en

About Bristol University

Ranked in the world’s top 60 in the QS World University Rankings 2021, Bristol is one of the most popular and successful universities in the UK. At the cutting edge of global research, we have made innovations in areas ranging from cot death prevention to nanotechnology. The University is a chartered corporation and an exempt charity, whose legal status derives from a royal charter granted in 1909 and was the first higher education institution in the UK to admit men and women on an equal basis. At University of Briston, sustainability is part of everything we do: our research, our curricula, our buildings and the student experience. www.bristol.co.uk/university

Media Contacts

Leslie Johnsen
Communications Advisor
Mob: +47 41 45 80 43
Email: leslie.johnsen@swegan.se

Leibniz-Institut für Höchstfrequenztechnik
Petra Immerz, M.A.
Communications Manager
Phone +49.30.6392-2626
Email: petra.immerz@fbh-berlin.de

University of Bristol
Naomi Ella Dureau
Internal Communications Officer
Phone: 0044 (0) 117 39 40166
Email: internal-comms@bristol.ac.uk

Linköping, Sweden, 2021-03-25