QuanFine™

C-Doped

C-Doped

Conventional Structure

We know that every application is different and we understand how important it is to optimize materials for the target application. We will therefore always focus on your needs to help you design, develop, and adapt the materials structure that fits your vision of device performance. You can find information about the typical quality of our generic product types below. Please contact us for more information on our customization services.

  • High breakdown voltage

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Available options

Our epi-wafers come with flexibility, you are able to mix and match according to your needs. You can find information about the different options below. Please contact us for more information on our customization services.

SiC wafer size Diameter Thickness
4″ 100 mm 500 um
6″ 150 mm 500 um
Barrier Thickness Composition (Al%) Sheet resistance, Rs Mobility, μs
AlGaN 8 – 30 nm 15 – 35 % 250 – 400 ohm/sq ≥ 2000 cm2/Vs
InAl(Ga)N 4 – 8 nm 83 – 89 % 200 – 350 ohm/sq ≥ 1700 cm2/Vs
AlN 3 – 5 nm ≥ 50 % 280 – 250 ohm/sq ≥ 1500 cm2/Vs

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