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So far Leslie Johnsen has created 12 blog entries.

SweGaN Secures €12m Investment – Swedish maker of GaN-on-SiC epitaxial wafers to significantly boost capacity with latest funding round

2022-10-10T09:28:21+02:00

Tuesday 4th October 2022 - Link to article Swedish maker of GaN-on-SiC epitaxial wafers [...]

SweGaN Secures €12m Investment – Swedish maker of GaN-on-SiC epitaxial wafers to significantly boost capacity with latest funding round2022-10-10T09:28:21+02:00

SweGaN and Chalmers University demonstrate high-voltage GaN power devices with a high breakdown voltage of >1600V and low leakage current of 22nA/mm on QuanFINE® epitaxial solutions

2022-06-21T13:51:19+02:00

Link to article on Electronics Media Chalmers University of Technology and SweGaN AB, manufacturer of custom-made GaN-on-SiC [...]

SweGaN and Chalmers University demonstrate high-voltage GaN power devices with a high breakdown voltage of >1600V and low leakage current of 22nA/mm on QuanFINE® epitaxial solutions2022-06-21T13:51:19+02:00

SweGaN and Chalmers University demonstrate high-voltage GaN power devices with a high breakdown voltage of >1600V and low leakage current of 22nA/mm on QuanFINE® epitaxial solutions

2022-12-16T10:41:04+01:00

SweGaN and Chalmers University demonstrate high-voltage GaN power devices with a high breakdown voltage [...]

SweGaN and Chalmers University demonstrate high-voltage GaN power devices with a high breakdown voltage of >1600V and low leakage current of 22nA/mm on QuanFINE® epitaxial solutions2022-12-16T10:41:04+01:00

SweGaN brings its unique GaN-on-SiC epitaxial solutions to joint ESA project aiming Ka-band GaN MMICs for satellite antennas

2021-03-24T18:14:38+01:00

SweGaN brings its unique GaN-on-SiC epitaxial solutions to joint ESA project aiming Ka-band [...]

SweGaN brings its unique GaN-on-SiC epitaxial solutions to joint ESA project aiming Ka-band GaN MMICs for satellite antennas2021-03-24T18:14:38+01:00
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