High power density
Ultra-low thermal resistance
Enhanced carrier confinement
Extraordinary high breakdown voltage
Epiwafers with enhanced carrier confinement for RF devices
Epiwafers with high power density
Epiwafers with high breakdown voltage
Enabling devices to face the extreme conditions in space
Helping to guarantee state-of-the-art accuracy and resolution
Enabling true worldwide connectivity
Contributing to the growing electrification worldwide
Enhancing efficiency and reducing cooling requirements
Better, smaller and more environmental friendly power
MOCVD GaN Epitaxy Engineer
SweGaN is a producer of GaN-on-SiC epiwafers. We are devoted to supply customized high performance material to give to our customers competitive advantages.
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