The industry standard, Fe-doped GaN epi-wafer, high-electron, mobility transistor structure is highly popular standard for telecommunication devices – such as those found in radio base-stations and satellites. Using this structure, you receive a GaN buffer with Fe acceptors that make the GaN buffer highly resistive, i.e., low leakage current, and provides a high-power density. This Fe-doped structure is grown on our proprietary AlN nucleation layer, which provides enhanced thermal conductivity for improved device cooling and performance.
Our Fe-doped material has been benchmarked and fully validated. It features high-power density and other characteristics that are comparable with the state-of-the-art Fe-doped material.