QuanFine™
C-Doped
AlGaN back barrier
Available options
Our epi-wafers come with flexibility, you are able to mix and match according to your needs. You can find information about the typical quality of our generic product types below. Please contact us for more information on our customization services.
| SiC wafer size | Diameter | Thickness |
|---|---|---|
| 4″ | 100 mm | 500 um |
| 6″ | 150 mm | 500 um |
| Barrier | Thickness | Composition (Al%) | Sheet resistance, Rs | Mobility, μs |
|---|---|---|---|---|
| AlGaN | 8 – 30 nm | 15 – 35 % | 250 – 400 ohm/sq | ≥ 2000 cm2/Vs |
| InAl(Ga)N | 4 – 8 nm | 83 – 89 % | 200 – 350 ohm/sq | ≥ 1700 cm2/Vs |
| AlN | 3 – 5 nm | ≥ 50 % | 280 – 250 ohm/sq | ≥ 1500 cm2/Vs |