QuanFine™

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AlGaN back barrier

Novel Structure

The AlGaN back barrier technology is a further enhancement of SweGaN’s proprietary QuanFINE structure. Please contact us for more information on our AlGaN back barrier technology

  • Enhanced carrier confinement for RF devices

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Available options

Our epi-wafers come with flexibility, you are able to mix and match according to your needs. You can find information about the typical quality of our generic product types below. Please contact us for more information on our customization services.

 

 

SiC wafer size Diameter Thickness
4″ 100 mm 500 um
6″ 150 mm 500 um
Barrier Thickness Composition (Al%) Sheet resistance, Rs Mobility, μs
AlGaN 8 – 30 nm 15 – 35 % 250 – 400 ohm/sq ≥ 2000 cm2/Vs
InAl(Ga)N 4 – 8 nm 83 – 89 % 200 – 350 ohm/sq ≥ 1700 cm2/Vs
AlN 3 – 5 nm ≥ 50 % 280 – 250 ohm/sq ≥ 1500 cm2/Vs

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