High power density, ultra-low thermal resistance and extraordinary high breakdown voltage epiwafers
Epiwafers with high breakdown voltage
Epiwafers with high power density
Epiwafers with enhanced carrier confinement for RF devices
We perform an array of measurements
State-of-the-art clean room for high-frequency devices
Helping you to develop new technology and empower innovation
Enabling devices to face the extreme conditions in space
Helping to guarantee state-of-the-art accuracy and resolution
Enabling true worldwide connectivity
Contributing to the growing electrification worldwide
Enhancing efficiency and reducing cooling requirements
Better, smaller and more environmental friendly power
The AlGaN back barrier technology is a further enhancement of SweGaN’s proprietary QuanFINE structure. Please contact us for more information on our AlGaN back barrier technology
Enhanced carrier confinement for RF devices
Our epi-wafers come with flexibility, you are able to mix and match according to your needs. You can find information about the typical quality of our generic product types below. Please contact us for more information on our customization services.
SweGaN is a producer of GaN-on-SiC epiwafers. We are devoted to supply customized high performance material to give to our customers competitive advantages.
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