MOCVD GaN Epitaxy Engineer
SweGaN2022-06-02T09:24:36+02:00MOCVD GaN Epitaxy Engineer As a MOCVD GaN Epitaxy [...]
MOCVD GaN Epitaxy Engineer As a MOCVD GaN Epitaxy [...]
SweGaN's scientific publications “Microwave Performance of ‘Buffer-Free’ GaN-on-SiC High Electron Mobility Transistors” IEEE [...]
DOI: https://doi.org/10.1109/TED.2019.2914674 Abstract: An enhancement of the electron mobility (μ) in InAlN/AlN/GaN heterostructures is [...]
DOI: https://doi.org/10.1063/1.5123374 Abstract: Interfaces containing misfit dislocations deteriorate electronic properties of heteroepitaxial [...]
DOI: https://doi.org/10.1109/LED.2020.2988074 Abstract: High performance microwave GaN-on-SiC HEMTs are demonstrated on a [...]
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Swedish epiwafer specialist SweGaN introduces new Chairman Linköping, Sweden, [...]
SweGaN establishes corporate headquarters in new facility - launches new 150mm [...]
New ‘buffer-free’ concept for GaN-on-SiC high electron mobility transistors reveals competitive [...]
SweGaN is a producer of GaN-on-SiC epiwafers. We are devoted to supply customized high performance material to give to our customers competitive advantages.
SweGaN is a producer of GaN-on-SiC epiwafers. We are devoted to supply customized high performance material to give to our customers competitive advantages.
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