MOCVD GaN Epitaxy Engineer As a MOCVD GaN Epitaxy [...]
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So far SweGaN has created 13 blog entries.
DOI: https://doi.org/10.1109/TED.2019.2914674 Abstract: An enhancement of the electron mobility (μ) in InAlN/AlN/GaN heterostructures is [...]
Transmorphic epitaxial growth of AlN nucleation layers on SiC substrates for high breakdown thin GaN transistorsSweGaN2021-03-18T21:51:49+01:00
DOI: https://doi.org/10.1063/1.5123374 Abstract: Interfaces containing misfit dislocations deteriorate electronic properties of heteroepitaxial [...]
DOI: https://doi.org/10.1109/LED.2020.2988074 Abstract: High performance microwave GaN-on-SiC HEMTs are demonstrated on a [...]
Swedish epiwafer specialist SweGaN introduces new Chairman Linköping, Sweden, [...]
SweGaN establishes corporate headquarters in new facility – launches new 150mm GaN-on-SiC epiwafer productSweGaN2021-02-05T17:17:14+01:00
SweGaN establishes corporate headquarters in new facility - launches new 150mm [...]
New ‘buffer-free’ concept for GaN-on-SiC high electron mobility transistors reveals competitive microwave performance and device efficiencySweGaN2021-02-05T17:15:19+01:00
New ‘buffer-free’ concept for GaN-on-SiC high electron mobility transistors reveals competitive [...]