MOCVD GaN Epitaxy Engineer
SweGaN2022-10-26T10:24:20+02:00MOCVD GaN Epitaxy Engineer As a MOCVD GaN Epitaxy [...]
Scientific publications
SweGaN2022-11-01T18:53:58+01:00SweGaN's scientific publications “Impact of the Channel Thickness on Electron Confinement in MOCVD-Grown [...]
Enhanced Mobility in InAlN/AlN/GaN HEMTs Using a GaN Interlayer
SweGaN2021-03-18T21:51:49+01:00DOI: https://doi.org/10.1109/TED.2019.2914674 Abstract: An enhancement of the electron mobility (μ) in InAlN/AlN/GaN heterostructures is [...]
Transmorphic epitaxial growth of AlN nucleation layers on SiC substrates for high breakdown thin GaN transistors
SweGaN2021-03-18T21:51:49+01:00DOI: https://doi.org/10.1063/1.5123374 Abstract: Interfaces containing misfit dislocations deteriorate electronic properties of heteroepitaxial [...]
Microwave Performance of ‘Buffer-Free’ GaN-on-SiC High Electron Mobility Transistors
SweGaN2021-03-14T12:56:07+01:00DOI: https://doi.org/10.1109/LED.2020.2988074 Abstract: High performance microwave GaN-on-SiC HEMTs are demonstrated on a [...]
Open application
SweGaN2022-05-31T14:29:52+02:00Send an open application Is there no announced job [...]
Swedish epiwafer specialist SweGaN introduces new Chairman
SweGaN2021-02-10T09:08:00+01:00Swedish epiwafer specialist SweGaN introduces new Chairman Linköping, Sweden, [...]
SweGaN establishes corporate headquarters in new facility – launches new 150mm GaN-on-SiC epiwafer product
SweGaN2021-02-05T17:17:14+01:00SweGaN establishes corporate headquarters in new facility - launches new 150mm [...]
New ‘buffer-free’ concept for GaN-on-SiC high electron mobility transistors reveals competitive microwave performance and device efficiency
SweGaN2021-02-05T17:15:19+01:00New ‘buffer-free’ concept for GaN-on-SiC high electron mobility transistors reveals competitive [...]