November 25th, 2019
We are thrilled to be featured on the APL Nov. 25th cover! Recently a joint team from SweGaN, IEMN CNRS and Linköping University revealed ground-breaking epitaxial growth to produce new generation GaN-on-SiC epiwafers for power devices. Findings from the research collaboration and details of the joint team are available in:
Applied Physics Letters, Volume 115, Issue 22, “Transmorphic Epitaxial Growth of AlN Nucleation Layers on SiC Substrates for High-Breakdown Thin GaN Transistors”.