Featured cover of Applied physics letters

FEATURED COVER OF APPLIED PHYSICS LETTERS

November 25th, 2019

We are thrilled to be featured on the APL Nov. 25th cover! Recently a joint team from SweGaN, IEMN CNRS and Linköping University revealed ground-breaking epitaxial growth to produce new generation GaN-on-SiC epiwafers for power devices. Findings from the research collaboration and details of the joint team are available in:

Applied Physics Letters, Volume 115, Issue 22, “Transmorphic Epitaxial Growth of AlN Nucleation Layers on SiC Substrates for High-Breakdown Thin GaN Transistors”.

SweGaN2021-02-08T21:17:59+01:00

Crafting wide bandgap materials for a better world.

SweGaN is a producer of GaN-on-SiC epiwafers. We are devoted to supply customized high performance material to give to our customers competitive advantages.

Get in touch

Crafting wide bandgap materials for a better world.

SweGaN is a producer of GaN-on-SiC epiwafers. We are devoted to supply customized high performance material to give to our customers competitive advantages.