#GaN – SweGaN

Semiconductor Today: SweGaN to build new HQ and GaN-on-SiC epiwafer production facility

Semiconductor Today: SweGaN to build new HQ and GaN-on-SiC epiwafer production facility

Leslie Johnsen2023-03-02T13:49:31+01:00

SweGaN to build new HQ and GaN-on-SiC epiwafer production facility Link to article on [...]

Semiconductor Today: SweGaN to build new HQ and GaN-on-SiC epiwafer production facilityLeslie Johnsen2023-03-02T13:49:31+01:00

NyTeknik.se: The super circuits for the green transition – why Sweden is at the forefront

NyTeknik.se: The super circuits for the green transition – why Sweden is at the forefront

Leslie Johnsen2023-02-14T12:38:59+01:00

NyTeknik.se: The super circuits for the green transition – why Sweden is at the [...]

NyTeknik.se: The super circuits for the green transition – why Sweden is at the forefrontLeslie Johnsen2023-02-14T12:38:59+01:00

European semiconductor manufacturer SweGaN secures 12 million Euro investment to significantly expand production capacity, appoints new CEO

Leslie Johnsen2022-10-04T10:00:01+02:00

European semiconductor manufacturer SweGaN secures 12 million Euro investment to significantly expand production capacity, [...]

European semiconductor manufacturer SweGaN secures 12 million Euro investment to significantly expand production capacity, appoints new CEOLeslie Johnsen2022-10-04T10:00:01+02:00

SweGaN and Chalmers University demonstrate high-voltage GaN power devices with a high breakdown voltage of >1600V and low leakage current of 22nA/mm on QuanFINE® epitaxial solutions

SweGaN and Chalmers University demonstrate high-voltage GaN power devices with a high breakdown voltage of >1600V and low leakage current of 22nA/mm on QuanFINE® epitaxial solutions

Leslie Johnsen2022-06-21T13:51:19+02:00

Link to article on Electronics Media Chalmers University of Technology and SweGaN AB, manufacturer of custom-made GaN-on-SiC [...]

SweGaN and Chalmers University demonstrate high-voltage GaN power devices with a high breakdown voltage of >1600V and low leakage current of 22nA/mm on QuanFINE® epitaxial solutionsLeslie Johnsen2022-06-21T13:51:19+02:00

SweGaN and Chalmers University demonstrate high-voltage GaN power devices with a high breakdown voltage of >1600V and low leakage current of 22nA/mm on QuanFINE® epitaxial solutions

Leslie Johnsen2022-12-16T10:41:04+01:00

SweGaN and Chalmers University demonstrate high-voltage GaN power devices with a high breakdown voltage [...]

SweGaN and Chalmers University demonstrate high-voltage GaN power devices with a high breakdown voltage of >1600V and low leakage current of 22nA/mm on QuanFINE® epitaxial solutionsLeslie Johnsen2022-12-16T10:41:04+01:00

SweGaN brings its unique GaN-on-SiC epitaxial solutions to joint ESA project aiming Ka-band GaN MMICs for satellite antennas

SweGaN brings its unique GaN-on-SiC epitaxial solutions to joint ESA project aiming Ka-band GaN MMICs for satellite antennas

Leslie Johnsen2021-03-24T18:14:38+01:00

SweGaN brings its unique GaN-on-SiC epitaxial solutions to joint ESA project aiming Ka-band [...]

SweGaN brings its unique GaN-on-SiC epitaxial solutions to joint ESA project aiming Ka-band GaN MMICs for satellite antennasLeslie Johnsen2021-03-24T18:14:38+01:00