SGAN-NEXT Consortium: European supply chain with GaN epitaxial wafers

9 partners in 5 countries covering all the steps in the product development:

• European supply chain with GaN epitaxial wafers
• Improved 0.1–um GaN technology
• Capability to design/implement GaN-based solutions
• Advanced modules for high frequency operations

Swegan is developing an advanced GaN on SiC epitaxy process as part of the SGAN-NEXT project. More details about the SGAN-NEXT project and consortium are highlighted below.

Watch SweGaN’s video:

The goal of SGAN-Next: To develop a European GaN on SiC MMIC process for high frequency operating devices (Q band and beyond) targeting flexible payloads for LEO/GEO applications.

SGAN-NEXT project objectives

• Technical reliability assessment for space qualification of European GaN on SiC MMIC foundry process
• High frequency operation of European GaN on SiC devices
• European GaN epitaxy supply chain
• Development of Q-band HPA components for LEO flexible antenna
• Development of Q-band HPA components for GEO flexible antennas
• Development of robust RF front-end component

Visit the SGAN-NEXT website for more information

Consortium partners