Insights and Featured Research

Transmorphic epitaxial growth of AlN nucleation layers on SiC substrates for high breakdown thin GaN transistors

SweGaN2021-03-18T21:51:49+01:00

DOI: https://doi.org/10.1063/1.5123374 Abstract: Interfaces containing misfit dislocations deteriorate electronic properties of heteroepitaxial [...]

Transmorphic epitaxial growth of AlN nucleation layers on SiC substrates for high breakdown thin GaN transistorsSweGaN2021-03-18T21:51:49+01:00

Enhanced Mobility in InAlN/AlN/GaN HEMTs Using a GaN Interlayer

SweGaN2021-03-18T21:51:49+01:00

DOI: https://doi.org/10.1109/TED.2019.2914674 Abstract: An enhancement of the electron mobility (μ) in InAlN/AlN/GaN heterostructures is [...]

Enhanced Mobility in InAlN/AlN/GaN HEMTs Using a GaN InterlayerSweGaN2021-03-18T21:51:49+01:00

Microwave Performance of ‘Buffer-Free’ GaN-on-SiC High Electron Mobility Transistors

SweGaN2021-03-14T12:56:07+01:00

DOI: https://doi.org/10.1109/LED.2020.2988074 Abstract: High performance microwave GaN-on-SiC HEMTs are demonstrated on a [...]

Microwave Performance of ‘Buffer-Free’ GaN-on-SiC High Electron Mobility TransistorsSweGaN2021-03-14T12:56:07+01:00

Crafting wide bandgap materials for a better world.

SweGaN is a producer of GaN-on-SiC epiwafers. We are devoted to supply customized high performance material to give to our customers competitive advantages.

Crafting wide bandgap materials for a better world.

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