SweGaN secures multiple major frame agreements for QuanFINE® GaN-on-SiC epitaxial wafers – reports 100% YoY order increase in 1H and new high-capacity facility in operation
Linköping, Sweden, August 13th, 2024: SweGaN AB, a European semiconductor manufacturer that develops and produces custom engineered Gallium Nitride on Silicon Carbide (GaN-on-SiC) epitaxial wafers, reports orders for its benchmark QuanFINE® epiwafers worth 17 MSEK in the first half of 2024, including three large frame agreements from undisclosed major Telecom and Defense market players. The company reported a 100% YoY order increase and began deliveries from its new facility in Linköping, Sweden, marking significant progress in its scale-up journey.
(Link to press release in Swedish)
In additional notable news, the semiconductor manufacturer announces a newly completed QuanFINE epiwafer customer qualification with a device manufacturer.
In the last two years, SweGaN has displayed an exciting operational transformation in alignment with its growth strategy and global demands for GaN-on-SiC epiwafers. Securing a Series A investment round, the company has scaled its organization, established a streamlined team, and deployed a new high-capacity production facility to drive its growth strategy and future KPIs.
– “Today we celebrate three significant milestones that signal SweGaN’s transition from a pure R&D company to a rigorous global semiconductor manufacturer.” says Dr. Jr-Tai Chen, CEO at SweGaN.
– “Currently, there is a strong momentum in the Telecom industry to upgrade technology from 5G to 5G Advanced, continues Chen. SweGaN’s patented QuanFINE® buffer-free GaN-on-SiC material is well-suited to meet the demanding technical requirements of the new technology, particularly in terms of device efficiency and thermal management. This applies to the new Telecom standard 5G Advanced, as well as the strong demands for enhanced sensing capability in Defense applications. The new framework orders will accelerate product development and production ramp-up enabling SweGaN to tap the market opportunities in both the Telecom and Defense sectors.”
With SweGaN’s new production facility in full swing, the company has the tools to fully embrace its ambitious scale-up strategy and significantly boost manufacturing capacity of next-generation GaN-on-SiC engineered epitaxial wafers. Simultaneously, the company aims to continue to innovate through new R&D initiatives and deepen partnerships with suppliers and customers to establish resilient supply chains.
– “I take immense pride in our synergistic team, in both successfully qualifying SweGaN’s first epiwafer product with a device manufacturer and executing on the significant undertaking of bringing the the new high-capacity wafer production facility into operation, from planning to deployment,” continues Chen.
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About SweGaN
SweGaN provides unique solutions for GaN-on-SiC epiwafers based on its groundbreaking epitaxial growth technology for the manufacturers of RF devices used in applications of telecom, defense, satellite communications. The high performance of SweGaN QuanFINE® material enables our customers to quickly adapt to the evolving challenges of next-generation high power and high frequency devices, and to create future-oriented solutions. For more information, visit us as www.swegan.se and LinkedIn.
Media Contact
SweGaN
Leslie Johnsen
Communications Advisor
Mob: +47 41 45 80 43
Email: leslie.johnsen@swegan.se