High power density, ultra-low thermal resistance, enhanced carrier confinement and extraordinary high breakdown voltage
High breakdown voltage
High power density
Enhanced carrier confinement for RF devices
We provide a variety of characterizations from basic techniques to advanced.
We provide device processing and prototyping in a state-of-the-art clean room for high-frequency and high-power devices
Helping you to develop new technology and empower innovation
Enabling devices to face the extreme conditions in space
Helping to guarantee state-of-the-art accuracy and resolution
Enabling true worldwide connectivity
Contributing to the growing electrification worldwide
Enhancing efficiency and reducing cooling requirements
Better, smaller and more environmental friendly power
Fill out the form to request a product data-sheet
SweGaN is a producer of GaN-on-SiC epiwafers. We are devoted to supply customized high performance material to give to our customers competitive advantages.
© 2020 SweGaN™. All rights reserved.