July 6th, 2019

SweGaN AB was recently featured in Taiwan’s biggest newspaper, LibertyTimes, as “The pride of Taiwan in Sweden! An R&D team, producing a revolutionary semiconductor material, led by Jr-Ted Chen”. “Dr. Jr-Tai Chen from Taiwan has made a revolutionary breakthrough in the field of semiconductor materials. His team employs a unique epitaxy technology to manufacture gallium nitride (GaN) on silicon carbide (SiC) substrates, with a defect density 100 to 1000 times lower than the ones manufactured by the traditional method, and that can withstand high voltages of more than 1500 volts with a total epilayer thickness 20 times thinner than that of the conventional ones. This breakthrough has been featured in the journal of Applied Physics Letters.”