power devices – SweGaN

SweGaN and Chalmers University demonstrate high-voltage GaN power devices with a high breakdown voltage of >1600V and low leakage current of 22nA/mm on QuanFINE® epitaxial solutions

SweGaN and Chalmers University demonstrate high-voltage GaN power devices with a high breakdown voltage of >1600V and low leakage current of 22nA/mm on QuanFINE® epitaxial solutions

Leslie Johnsen2022-06-21T13:51:19+02:00

Link to article on Electronics Media Chalmers University of Technology and SweGaN AB, manufacturer of custom-made GaN-on-SiC [...]

SweGaN and Chalmers University demonstrate high-voltage GaN power devices with a high breakdown voltage of >1600V and low leakage current of 22nA/mm on QuanFINE® epitaxial solutionsLeslie Johnsen2022-06-21T13:51:19+02:00

Crafting wide bandgap materials for a better world.

SweGaN is a producer of GaN-on-SiC epiwafers. We are devoted to supply customized high performance material to give to our customers competitive advantages.

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Crafting wide bandgap materials for a better world.

SweGaN is a producer of GaN-on-SiC epiwafers. We are devoted to supply customized high performance material to give to our customers competitive advantages.

Crafting wide bandgap materials for a better world.

Crafting wide bandgap materials for a better world.

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