SweGaN presents enhanced power performance of RF GaN using a new QuanFINE® architecture at ICNS-15 Conference
SweGaN’s Anders Lundskog will present new findings on SweGaN’s QuanFINE® GaN HEMT epitaxial solutions. Additionally, David Dai will present a poster on the development of GaN HEMTs reclaiming process.
SGAN-NEXT Consortium: European supply chain with GaN epitaxial wafers
SweGaN a part of GaN project focusing on advanced Europe-based space qualified GaN technology and components for next generation Space Communications systems.
SweGaN and Chalmers University demonstrate high-voltage GaN power devices with a high breakdown voltage of >1600V and low leakage current of 22nA/mm on QuanFINE® epitaxial solutions
SweGaN and Chalmers demonstrate high-voltage GaN power devices: High breakdown voltage, low leakage current.
