SweGaN presents enhanced power performance of RF GaN using a new QuanFINE® architecture at ICNS-15 Conference

SweGaN features at ICNS-15, Malmö, Sweden, encompassing a host of activities!

At a special industry session on Innovation, R&D Manager Anders Lundskog will present new performance findings on SweGaN’s patented QuanFINE® GaN HEMT epitaxial solutions with AIGaN Back Barrier at the 15^th Int’l Conference on Nitride Semiconductors (ICNS-15).

Additionally, SweGaN’s David Dai will present a poster on the development of GaN HEMTs reclaiming process, and at the ICNS-15 Exhibition, the SweGaN team will have a booth at Stand 11, presenting the company and our epitaxial solutions for RF and power devices.  

Industry Session on Innovation

• Time: Monday, July 7^th: 11 am – 12:15 pm
• Speaker: Anders Lundskog, R&D Manager, SweGaN
• Topic: Development of QuanFINE® with an AlGaN Back Barrier
• Presentation Highlights: SweGaN’s patented QuanFINE® buffer-free GaN-on-SiC HEMTs offer a promising platform for high-frequency, high-power RF applications, enabling ultrathin GaN epitaxial layer, strong confinement, and efficient heat dissipation, key for aggressive scaling. This approach allows the AlN-nucleation layer to act as a back-barrier, limiting short channel effects and removing buffer leakage. SweGaN will present a new QuanFINE architecture that mitigates trapping while maintaining excellent confinement and boosting power performance. 

Poster presentation

• Time: Tuesday, July 8^th: 5 pm – 7 pm
• Speaker: David Dai, Process Engineer, SweGaN
• Topic: Developing GaN HEMTs Reclaiming Process for GaN on SiC Epi-Structure to Close the Loop of Supply Chain

ICNS-15 Exhibition at Stand 11

• Time: July 6^th – 11^th
• The SweGaN team will present the company and introduce its tailor-made engineered epitaxial solutions for RF and power devices.
• Welcome to visit us and have conversations with our experts! Reach out to pre-book a meeting: shan-tsun.huang@swegan.se