9 partners in 5 countries covering all the steps in the product development:
- European supply chain with GaN epitaxial wafers
- Improved 0.1–um GaN technology
- Capability to design/implement GaN-based solutions
- Advanced modules for high frequency operations
Swegan is developing an advanced GaN on SiC epitaxy process as part of the SGAN-NEXT project. More details about the SGAN-NEXT project and consortium are highlighted below.
Watch SweGaN’s video:
The goal of SGAN-Next: To develop a European GaN on SiC MMIC process for high frequency operating devices (Q band and beyond) targeting flexible payloads for LEO/GEO applications.
- Technical reliability assessment for space qualification of European GaN on SiC MMIC foundry process
- High frequency operation of European GaN on SiC devices
- European GaN epitaxy supply chain
- Development of Q-band HPA components for LEO flexible antenna
- Development of Q-band HPA components for GEO flexible antennas
- Development of robust RF front-end component
Visit the SGAN-NEXT website for more information
Consortium partners
| United Monolithic Semiconductors Germany | Airbus Spain | Ferdinand Braun Institut Germany |
| Universita di bologna Italy | Universitat Autònoma de Barcelona Spain | Thales Alenia Space France |
| Sener Spain | United Monolithic Semiconductors France | SweGaN Sweden |
