SweGaN presents enhanced power performance of RF GaN using a new QuanFINE® architecture at ICNS-15 Conference
SweGaN’s Anders Lundskog will present new findings on SweGaN’s QuanFINE® GaN HEMT epitaxial solutions. Additionally, David Dai will present a poster on the development of GaN HEMTs reclaiming process.
SweGaN and Chalmers University demonstrate high-voltage GaN power devices with a high breakdown voltage of >1600V and low leakage current of 22nA/mm on QuanFINE® epitaxial solutions
SweGaN and Chalmers demonstrate high-voltage GaN power devices: High breakdown voltage, low leakage current.
Swedish epiwafer specialist SweGaN introduces new Chairman
Swedish epiwafer specialist SweGaN introduces new Chairman, Agneta Franksson.
SweGaN selected for second year on list of Sweden’s hottest tech startups
SweGaN selected for second year on list of Sweden’s hottest tech startups.
