#QuanFine – SweGaN

SweGaN secures multiple major frame agreements for QuanFINE® GaN-on-SiC epitaxial wafers – reports 100% YoY order increase in 1H and new high-capacity facility in operation

SweGaN secures multiple major frame agreements for QuanFINE® GaN-on-SiC epitaxial wafers – reports 100% YoY order increase in 1H and new high-capacity facility in operation

Leslie Johnsen2024-08-13T07:10:34+02:00

SweGaN secures multiple major frame agreements for QuanFINE® GaN-on-SiC epitaxial wafers – reports [...]

SweGaN secures multiple major frame agreements for QuanFINE® GaN-on-SiC epitaxial wafers – reports 100% YoY order increase in 1H and new high-capacity facility in operationLeslie Johnsen2024-08-13T07:10:34+02:00

SweGaN and Chalmers University demonstrate high-voltage GaN power devices with a high breakdown voltage of >1600V and low leakage current of 22nA/mm on QuanFINE® epitaxial solutions

SweGaN and Chalmers University demonstrate high-voltage GaN power devices with a high breakdown voltage of >1600V and low leakage current of 22nA/mm on QuanFINE® epitaxial solutions

Leslie Johnsen2022-06-21T13:51:19+02:00

Link to article on Electronics Media Chalmers University of Technology and SweGaN AB, manufacturer of custom-made GaN-on-SiC [...]

SweGaN and Chalmers University demonstrate high-voltage GaN power devices with a high breakdown voltage of >1600V and low leakage current of 22nA/mm on QuanFINE® epitaxial solutionsLeslie Johnsen2022-06-21T13:51:19+02:00

SweGaN brings its unique GaN-on-SiC epitaxial solutions to joint ESA project aiming Ka-band GaN MMICs for satellite antennas

SweGaN brings its unique GaN-on-SiC epitaxial solutions to joint ESA project aiming Ka-band GaN MMICs for satellite antennas

Leslie Johnsen2021-03-24T18:14:38+01:00

SweGaN brings its unique GaN-on-SiC epitaxial solutions to joint ESA project aiming Ka-band [...]

SweGaN brings its unique GaN-on-SiC epitaxial solutions to joint ESA project aiming Ka-band GaN MMICs for satellite antennasLeslie Johnsen2021-03-24T18:14:38+01:00