SweGaN team at ICNS15 in Malmö, Sweden
At the ICNS 15 Exhibition, the SweGaN team will present the company and introduce its tailor-made engineered epitaxial solutions for RF and power devices.
CS Mantech
Meet SweGaN’s R&D Manager Anders Lundskog in New Orleans
Special IMA event hosting Taipei Mission in Sweden
SweGaN CEO/founder had honor of sharing his semiconductor journey and inviting the special guests to visit SweGaN HQ.
SGAN-NEXT Consortium: European supply chain with GaN epitaxial wafers
SweGaN a part of GaN project focusing on advanced Europe-based space qualified GaN technology and components for next generation Space Communications systems.
SweGaN secures multiple agreements
SweGaN secures major frame agreements – reports 100% 1H YoY order increase & new high-capacity facility in operation.
SSF mobility grant brings Linköping University professor Galia Pozina to 2-year GaN research collaboration with SweGaN
Grant brings LiU professor Galia Pozina to 2-year GaN research collaboration with SweGaN.
Semiconductor Today: SweGaN to build new HQ and GaN-on-SiC epiwafer production facility
SweGaN to build new HQ and GaN-on-SiC epiwafer production facility Link to article on Semiconductor Today SweGaN AB of Linköping, Sweden, which manufactures custom gallium nitride on silicon carbide (GaN-on-SiC) epitaxial wafers (based on a unique growth technology) for telecom, satellite, defense and power electronics applications, is to build a new headquarters including a high-capacity […]
NyTeknik.se: The super circuits for the green transition – why Sweden is at the forefront
NyTeknik.se: The super circuits for the green transition – why Sweden is at the forefront Link to NyTekni Article (in Swedish): The super circles for the green transition – why Sweden is at the forefront (nyteknik.se) REPORTER: Charlotta von Schultz – 9 FEB 2023 AT 07.53 Jr-Tai Chen is the co-founder and CEO of Swegan, […]
SweGaN and Chalmers University demonstrate high-voltage GaN power devices with a high breakdown voltage of >1600V and low leakage current of 22nA/mm on QuanFINE® epitaxial solutions
SweGaN and Chalmers demonstrate high-voltage GaN power devices: High breakdown voltage, low leakage current.
Swedish epiwafer specialist SweGaN introduces new Chairman
Swedish epiwafer specialist SweGaN introduces new Chairman, Agneta Franksson.