Featured cover of Applied physics letters

SweGaN Featured on cover of Applied physics letters.

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We are thrilled to be featured on the APL Nov. 25th cover! Recently a joint team from SweGaN, IEMN CNRS and Linköping University revealed ground-breaking epitaxial growth to produce new generation GaN-on-SiC epiwafers for power devices. Findings from the research collaboration and details of the joint team are available in:

Applied Physics Letters, Volume 115, Issue 22, “Transmorphic Epitaxial Growth of AlN Nucleation Layers on SiC Substrates for High-Breakdown Thin GaN Transistors”.[/fusion_text][/fusion_builder_column][/fusion_builder_row][/fusion_builder_container]

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