SweGaN is a Swedish manufacturer of custom-made epitaxial wafers with revolutionary technology. We aim at becoming the world leading supplier of group III-nitride materials. We believe that our materials’ ground-breaking performance will allow you to meet the challenges of the next generation of high power and high frequency devices
Our vision is to build a relationship based on mutual trust and constant dialogue with our customers in order to define and produce the epi-wafers that best suits their requirements.
SweGaN’s close ties with Linköping University and Chalmers University of Technology allow us to rapidly develop future group III-V GaN on SiC materials and devices.
We believe that every customer is unique. Therefore, we will go with you every step of the way to design, customize and then produce the wafer you need. Our experience of GaN materials will allow us to determine what really fits your devices and how to get the best out of them.
Our vision is to build a relationship based on mutual trust and constant dialogue with our customers in order to define and produce the epi-wafers that best suit their requirements. We are devoted to consistently improving our products and services in order to enable our customers to achieve their ambitions. SweGaN will always strive to achieve its commitments regarding quality, costs and time plan.
High-power and high-frequency devices are facing efficiency challenges that need to be addressed in a world where energy consumption is a continuous concern. Our game-changing heat dissipation capabilities and high output power will thus bring decisive advantages to your components.
Facing extreme conditions in space where maintenance operations are almost impossible, satellite components have to be very robust and long-lasting. SweGaN’s materials enable the devices to have longer lifetimes and lower power consumption thanks to our outstanding thermal management.
On-the-move communication systems are a growing need, whether for civilian or military purposes. But on-the-move also means major limitations in terms of size and weight. Our materials’ impressive output power and very low memory effect pave the way for small and high-efficiency telecommunication devices, enabling true worldwide connectivity.
Precise detection and fast communication are two requirements for the efficiency of any armed force. GaN-based sensors guarantee state-of-the-art accuracy and resolution. SweGaN’s improved thermal management allow longer device lifetime and our high-power density finally eliminates the need to compromise between size and output power.
The conventional Thermal Boundary Resistance (TBR) in the GaN-SiC interfacial region causes up to 40 % additional temperature rise of the transistor channel temperature. Thanks to our ultra-low TBR technique, we have been able to reduce this additional temperature rise to a negligible level and the outstanding structural quality of the thin AlN nucleation layer significantly improves the regional thermal conductivities. Using isotope enriched SiC substrates can also enhance the thermal conductivity of the entire device structure by up to 25 %.
This allows us to address one of the biggest challenges with power RF devices: reliability. By reducing the operational temperature by 25 °C, the device’s lifetime is increased by a factor of ten.
The excellent structural quality of GaN epitaxial layers grown by SweGaN’s high-temperature process typically exhibits a threading dislocation density in the low 108 cm2 regime. This is the best GaN crystalline quality in the class, which not only guarantees the GaN robustness but also dramatically reduces the risk of device failure due to structural defects.
We know that every application is different and we understand how important it is to optimize materials for the target application. We will therefore always focus on your needs to help you design, develop, and adapt the materials structure that fits your vision of device performance.
You can find information about the typical quality of our generic product types below. Please contact us for more information on our customization services.
Wafer size is up to 100mm, with a special growth service on quarter 100mm substrates for reduced price.
|AlGaN back barrier||Enhanced carrier confinement for high frequency|
Low memory effect
Excellent heat dissipation
Enhanced carrier confinement for high frequency
|Barrier||Thickness||Composition (Al %)||Sheet resistance, Rs||Mobility, μs|
|AlGaN||8 - 35 nm||20 - 35 %||250 - 400 ohm/sq||> 2000 cm2/Vs|
|InAIN||5 - 8 nm||83-85 %||200 - 250 ohm/sq||> 1800 cm2/Vs|
|InAlGaN||Contact us for further information|
|GaN||XRC of GaN (102) < 300 arcsec|
|AIN||XRC of AIN (102) < 200 arcsec|
On top of our quality assurance, which includes thickness and sheet resistance measurement, executed on every shipped wafer, SweGaN can perform additional checks. This includes X-Ray diffraction, photoluminescence and cathodoluminescence spectroscopy, particle mapping, capacitance-voltage profiling, atomic force microscopy and TOF-SIMs spectroscopy. These extra measurements are carried out by qualified staff and will help you get additional information about the quality and performance of our epi-wafers.
As a spin-off from Linköping University, SweGaN has kept a very strong interest in research and development projects. We are always eager to develop new technology and to empower innovation for our partners and customers.
That is why we also offer research and development services, and we are always enthusiastic about participating in exciting research projects!
Working in many partnerships, we have over the years developed a solid know-how regarding simple device processing. We have access to a state-of-the-art clean room for high-frequency devices, so we can surely help with your device development needs. Because we believe that our materials will never perform better than in a device we have designed together with our customers.
Between June and August this year SweGaN has performed a new share emission, bringing in Mount Wilson Ventures, a US-based venture capital firm, Almi Invest, LiU holding, and several angel investors. This share issue takes place in a highly expansive phase for the company and the nearly 6 million SEK raised will accelerate SweGaN's business.
Together with Epiluvac SweGaN is developing a new high-throughput, 150 mm MOCVD reactor called GaNdalf which will be in operation in April 2018. Once fully operational, GaNdalf will increase the production capacity by a factor of 5 while maintaining the high quality growth process.
SweGaN AB introduces InAlN/GaN and InAlGaN/GaN HEMT structures on SiC substrates as new products. Both products exhibit record high channel mobility of over 2000 cm2/Vs and excellent morphology. The new structures are interesting for very high frequency applications where high-power densities are required.
Mount Wilson Ventures, a Los Angeles based venture firm specializing in hard-tech, early stage companies, invests into SweGaN AB. SweGaN will use the investment to scale up the operation.
SweGaN’s project ELeGaNS is funded under a Horizon2020 sme instrument phase 1 call for space applications. The score on the application was 14.39 out of 15 possible. The funds will be used for verification of the space market and developing targeted technology.
The European Defense Administration projects EUGaNIC aiming to establish a European supply chain for GaN-based devices kicked off in February 2016. SweGaN participates in this project along with several leading companies, universities, and research institutes. The project runs for four years.
At SweGaN’s annual meeting, Mats Andersson was elected chairman of the board replacing Dr. Olof Kordina as chairman. Dr. Kordina will remain on the board as ordinary board member and as CEO of SweGaN. Mats Andersson has extensive experience at Ericsson, Huawei and Ruag Space. He was also the CEO of Bluetest AB, a fledgling startup from Chalmers University, bringing the company into profitability.