Semiconductor Today: SweGaN to build new HQ and GaN-on-SiC epiwafer production facility
SweGaN to build new HQ and GaN-on-SiC epiwafer production facility Link to article on Semiconductor Today SweGaN AB of Linköping, Sweden, which manufactures custom gallium nitride on silicon carbide (GaN-on-SiC) epitaxial wafers (based on a unique growth technology) for telecom, satellite, defense and power electronics applications, is to build a new headquarters including a high-capacity […]
From the CEO: Recapping an exciting 2022 at SweGaN
Joint research & new qualification processes, plus major Series A Investment Round backing major growth plans.
SweGaN and Chalmers University demonstrate high-voltage GaN power devices with a high breakdown voltage of >1600V and low leakage current of 22nA/mm on QuanFINE® epitaxial solutions
SweGaN and Chalmers demonstrate high-voltage GaN power devices: High breakdown voltage, low leakage current.
