From the CEO: Recapping an exciting 2022 at SweGaN
Joint research & new qualification processes, plus major Series A Investment Round backing major growth plans.
GaN-on-SiC semiconductor manufacturer SweGaN boosts executive team – appoints Henrik Tölander as COO
GaN-on-SiC semiconductor manufacturer SweGaN boosts executive team – appoints Henrik Tölander as COO.
Compound Semiconductor: Swedish maker of GaN-on-SiC epitaxial wafers to significantly boost capacity with latest funding round
Tuesday 4th October 2022 – Link to article Swedish maker of GaN-on-SiC epitaxial wafers to significantly boost capacity with latest funding round SweGaN, a Sweden-based maker of GaN-on-SiC epitaxial wafers has completed a Series A financing round totaling 1€12m. The financing was co-led by Intertech Ventures, Mount Wilson Ventures and leading European investor Atlantic Bridge, […]
European semiconductor manufacturer SweGaN secures 12 million Euro investment to significantly expand production capacity, appoints new CEO
SweGaN secures 12 million Euro investment to significantly expand production capacity, appoints new CEO.
SweGaN and Chalmers University demonstrate high-voltage GaN power devices with a high breakdown voltage of >1600V and low leakage current of 22nA/mm on QuanFINE® epitaxial solutions
SweGaN and Chalmers demonstrate high-voltage GaN power devices: High breakdown voltage, low leakage current.
Electronics Media: SweGaN and Chalmers University of Technology & SweGaN AB, manufacturer of custom-made GaN-on-SiC epitaxial wafers
Chalmers University of Technology and SweGaN AB, manufacturer of custom-made GaN-on-SiC epitaxial wafers for the devices used in telecom, satellite, defense, and power electronics, announce a publication in Electron Device Letters, demonstrating new state-of-the-art results of high-voltage GaN power devices enabled by Chalmers MIS-HEMT technology and SweGaN QuanFINE buffer-free GaN-on-SiC materials. Among key findings, the research identifies QuanFINE epiwafers as a highly […]