SweGaN and Chalmers University demonstrate high-voltage GaN power devices with a high breakdown voltage of >1600V and low leakage current of 22nA/mm on QuanFINE® epitaxial solutions

2022-06-21T07:10:22+02:00

SweGaN and Chalmers University demonstrate high-voltage GaN power devices with a high breakdown voltage [...]

SweGaN and Chalmers University demonstrate high-voltage GaN power devices with a high breakdown voltage of >1600V and low leakage current of 22nA/mm on QuanFINE® epitaxial solutions2022-06-21T07:10:22+02:00

SweGaN brings its unique GaN-on-SiC epitaxial solutions to joint ESA project aiming Ka-band GaN MMICs for satellite antennas

2021-03-24T18:14:38+01:00

SweGaN brings its unique GaN-on-SiC epitaxial solutions to joint ESA project aiming Ka-band [...]

SweGaN brings its unique GaN-on-SiC epitaxial solutions to joint ESA project aiming Ka-band GaN MMICs for satellite antennas2021-03-24T18:14:38+01:00

New ‘buffer-free’ concept for GaN-on-SiC high electron mobility transistors reveals competitive microwave performance and device efficiency

2021-02-05T17:15:19+01:00

New ‘buffer-free’ concept for GaN-on-SiC high electron mobility transistors reveals competitive [...]

New ‘buffer-free’ concept for GaN-on-SiC high electron mobility transistors reveals competitive microwave performance and device efficiency2021-02-05T17:15:19+01:00
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