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300% Higher breakdown voltage
50% Lower thermal resistance
30% Higher power density
1000% Lower memory effect
50% Lower current collapse
Tables
Barrier
AlGaN
InAlGaN
AlGN
Thickness
8 - 30 nm
4 - 8 nm
3 - 5 nm
Composition (AI%)
15 - 35%
83 - 89%
> 50%
Sheet Resistance, Rs
250 - 400 ohm/sq
200 - 350 ohm/sq
280 - 250 ohm/sq
Mobility, us
> 2000 cm2/Vs
> 1700 cm2/Vs
> 1500 cm2/Vs
SiC wafer Size
4”
6”
Diameter
100 mm
150 mm
Thickness
500 um
500 um
Cards
IDM/Foundry
Providing premium quality customized materials, SweGaN delivers the product integrity foundries require to drive future business.
Fabless
Offering tailored services to boost development, design and sale of hardware devices and chips for the global market.
System Manufacturers
Supplying the benchmark materials that enable high-performance devices, learn how SweGaN we can empower your offering.
Steps
Material Operations
We perform advanced material characterizations to help you gain in-depth understanding of the materials.
Device Processing
We provide device processing and prototyping in a state-of-the-art clean room for high-frequency and high-power devices.
Research & Development
SweGaN experts help you develop new technology and empower future-oriented product innovation for your organization.
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News/Highlights
Find the latest news and press releases from SweGaN
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