Tailored Solutions On-Demand

Tailored Solutions On-Demand allows you to design and customize epitaxial solutions, based on your technical requirements.

Customizing your epitaxial solutions

SweGaN offers tailored epitaxial solutions on demand to address the technical challenges and requirements of your needs. Tailoring your solutions starts from a choice of substrates. You can find the following items to customize the epitaxial solutions. Additional options can be discussed based on your specific needs.

Customization

SUBSTRATE

The substrate forms the foundation for material growth, significantly influencing structural quality, thermal properties, and other material characteristics. SweGaN is specialized in the III-nitride epitaxy on SiC and GaN substrates. We also provide epitaxy services on different substrates.

Options:

3’’/4’’/6’’ SiC
GaN
Sapphire
Silicon

Options

Buffer

The conventional Fe-doped or C-doped buffer layer offers great compatibility with existing RF/power transistor technologies. Our unique buffer-free epitaxial solutions enable exceptional device performance and reliability without noticeable trade-offs.

Options:

Buffer-free (channel)
Fe-doped buffer
C-doped buffer

Options

Barrier

The barrier layer not only induces the channel electrons (e^–), but also serves as a critical layer that defines the transistor technology. We provide a wide range of barrier layers for different transistor technologies.

Options:

AlGaN
AIN
InAIN
InAIGaN

Options

Cap

The cap is typically a thin GaN layer, which alleviates the oxidation of the barrier, improving the reliability of the devices. For normally-off devices, a thick GaN layer is needed with Mg-doping to fully deplete the channel electrons.

Options:

UID GaN
Mg-doped GaN

Options

Passivation

The passivation layer protects the surface of semiconductor devices from environmental contaminations. It also stabilizes the electrical properties, providing enhanced device reliability and improved performance.

Options:

In-situ SiNx
Ex-situ SiNx

Options

BACK Barrier

The back layer is typically employed in a HEMT structure for highly scaled devices to further improving the electron confinement and minimizing the short channel effects.

Options:

AlGaN
Al(Ga)N/Ga(Al)N superlattice

Options

Reach out to discuss your technical needs and learn more Tailored Solutions On-Demand from SweGaN’s experts