QuanFINE®
Delivering a new generation of GaN Technology
Unique buffer free structure
Providing superior material quality and improved thermal transfer, QuanFINE® facilitates devices by enabling both higher switching frequencies and power densities. SweGaN’s unique technology enables a superior level of performance without added epi-wafer cost, while simultaneously providing lower power consumption and reduced system complexity – thus furnishing significant benefits for manufacturers. Providing exceptional reliability, the SweGaN QuanFINE® structure can be used in both development of cutting-edge telecommunication devices for applications such as satellites and 5G base-stations, and for high power devices, such as those found in supercharging systems for electric cars.
SweGaN can also provide Tailored Epi-on-Demand solutions.
300% Higher breakdown voltage
1000% Lower memory effect
50% Lower current collapse
State-of-the-art structural quality
GaN and AlN epitaxial layers grown using SweGaN’s high-temperature process exhibit excellent structural quality, where typically, threading dislocation density in the GaN layer is in low 108 cm-2 regime and the AlN nucleation layer is free of grain boundaries. This best-in-class structural quality guarantees GaN robustness and dramatically reduce the risk of device failure due to the structural defects.,
Increased electron mobility, boosting performance.
1000%
State-of-the-art structural quality
GaN and AlN epitaxial layers grown using SweGaN’s high-temperature process exhibit excellent structural quality, where typically, threading dislocation density in the GaN layer is in low 108 cm-2 regime and the AlN nucleation layer is free of grain boundaries. This best-in-class structural quality guarantees GaN robustness and dramatically reduce the risk of device failure due to the structural defects.,
Record-high electron mobility
SweGaN’s record-high channel electron mobility enables higher efficiency and higher operation frequency of transistors. Applyig SweGaN’s proprietary high-mobility growth process, channel electron mobility is 20-30% higher than conventional channel electron mobility. The record-high mobility achieved enables higher efficiency and operation frequency of the transistors.
20-30%
Increased electron mobility, boosting performance.
Ultra-low thermal boundary resistance
The conventional Thermal Boundary Resistance (TBR) in the GaN – SiC interface causes up to 40% additional channel temperature rise in transistors. Using our ultra-low-TBR AlN nucleation layer, we have reduced thes additional temperature rise to a negligible level. The outstanding structural quality of the thin AlN nucleation layer significantly improves the heat transport from the channel down to the high-thermal-conductivity SiC substrate. This allows SweGaN material to address significant challenges faced by RF and power devices: reliability. By reducing the operational temperature by 25 °C, the device lifetime is increased by a factor of 10.
Available Options
Our epitaxial wafers can be highly customized according to your needs. You can see the information about the different options below. Please contact us for more information for our customization service.
