SweGaN and Chalmers University demonstrate high-voltage GaN power devices with a high breakdown voltage of >1600V and low leakage current of 22nA/mm on QuanFINE® epitaxial solutions SweGaN and Chalmers University demonstrate high-voltage GaN power devices with a high breakdown voltage of >1600V and low leakage current of 22nA/mm on QuanFINE® epitaxial solutionsLeslie Johnsen2022-06-21T13:51:19+02:00June 21st, 2022|
SweGaN introduces new Head of Production, member of management team SweGaN introduces new Head of Production, member of management teamLeslie Johnsen2021-10-05T12:36:43+02:00October 5th, 2021|
SweGaN Brings its GaN-on-SiC Epitaxial Solutions to Joint ESA Project SweGaN Brings its GaN-on-SiC Epitaxial Solutions to Joint ESA ProjectLeslie Johnsen2021-03-26T13:25:10+01:00March 26th, 2021|
SweGaN brings its unique GaN-on-SiC epitaxial solutions to joint ESA project aiming Ka-band GaN MMICs for satellite antennasLeslie Johnsen2021-03-24T18:14:38+01:00March 25th, 2021|
Swedish epiwafer specialist SweGaN introduces new ChairmanSweGaN2021-02-10T09:08:00+01:00December 11th, 2020|
SweGaN establishes corporate headquarters in new facility – launches new 150mm GaN-on-SiC epiwafer productSweGaN2021-02-05T17:17:14+01:00July 9th, 2020|