SweGaN Secures €12m Investment – Swedish maker of GaN-on-SiC epitaxial wafers to significantly boost capacity with latest funding round SweGaN Secures €12m Investment – Swedish maker of GaN-on-SiC epitaxial wafers to significantly boost capacity with latest funding roundLeslie Johnsen2022-10-10T09:28:21+02:00October 10th, 2022|
SweGaN and Chalmers University demonstrate high-voltage GaN power devices with a high breakdown voltage of >1600V and low leakage current of 22nA/mm on QuanFINE® epitaxial solutions SweGaN and Chalmers University demonstrate high-voltage GaN power devices with a high breakdown voltage of >1600V and low leakage current of 22nA/mm on QuanFINE® epitaxial solutionsLeslie Johnsen2022-06-21T13:51:19+02:00June 21st, 2022|
SweGaN introduces new Head of Production, member of management team SweGaN introduces new Head of Production, member of management teamLeslie Johnsen2021-10-05T12:36:43+02:00October 5th, 2021|
SweGaN and Chalmers University demonstrate high-voltage GaN power devices with a high breakdown voltage of >1600V and low leakage current of 22nA/mm on QuanFINE® epitaxial solutionsLeslie Johnsen2022-12-16T10:41:04+01:00June 21st, 2022|
SweGaN brings its unique GaN-on-SiC epitaxial solutions to joint ESA project aiming Ka-band GaN MMICs for satellite antennasLeslie Johnsen2021-03-24T18:14:38+01:00March 25th, 2021|
Swedish epiwafer specialist SweGaN introduces new ChairmanSweGaN2021-02-10T09:08:00+01:00December 11th, 2020|