SweGaN secures multiple major frame agreements for QuanFINE® GaN-on-SiC epitaxial wafers – reports 100% YoY order increase in 1H and new high-capacity facility in operation

2024-08-13T07:10:34+02:00

SweGaN secures multiple major frame agreements for QuanFINE® GaN-on-SiC epitaxial wafers – reports [...]

SweGaN secures multiple major frame agreements for QuanFINE® GaN-on-SiC epitaxial wafers – reports 100% YoY order increase in 1H and new high-capacity facility in operation2024-08-13T07:10:34+02:00

GaN-on-SiC semiconductor manufacturer SweGaN boosts leadership – introduces new CFO and R&D Manager

2024-01-16T10:47:52+01:00

GaN-on-SiC semiconductor manufacturer SweGaN boosts leadership - introduces new CFO and R&D Manager Linköping, [...]

GaN-on-SiC semiconductor manufacturer SweGaN boosts leadership – introduces new CFO and R&D Manager2024-01-16T10:47:52+01:00

European compound semiconductor manufacturer SweGaN launches project for new headquarters and state-of-the-art wafer production facility

2023-03-02T13:29:58+01:00

European compound semiconductor manufacturer SweGaN launches project for new headquarters and state-of-the-art wafer production [...]

European compound semiconductor manufacturer SweGaN launches project for new headquarters and state-of-the-art wafer production facility2023-03-02T13:29:58+01:00

SweGaN and Chalmers University demonstrate high-voltage GaN power devices with a high breakdown voltage of >1600V and low leakage current of 22nA/mm on QuanFINE® epitaxial solutions

2022-12-16T10:41:04+01:00

SweGaN and Chalmers University demonstrate high-voltage GaN power devices with a high breakdown voltage [...]

SweGaN and Chalmers University demonstrate high-voltage GaN power devices with a high breakdown voltage of >1600V and low leakage current of 22nA/mm on QuanFINE® epitaxial solutions2022-12-16T10:41:04+01:00

SweGaN brings its unique GaN-on-SiC epitaxial solutions to joint ESA project aiming Ka-band GaN MMICs for satellite antennas

2021-03-24T18:14:38+01:00

SweGaN brings its unique GaN-on-SiC epitaxial solutions to joint ESA project aiming Ka-band [...]

SweGaN brings its unique GaN-on-SiC epitaxial solutions to joint ESA project aiming Ka-band GaN MMICs for satellite antennas2021-03-24T18:14:38+01:00
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