SweGaN named a finalist in the Nordic region’s Techarena Challenge 2020
SweGaN named a finalist in the Nordic region’s Techarena Challenge 2020.
New ‘buffer-free’ concept for GaN-on-SiC high electron mobility transistors reveals competitive microwave performance and device efficiency
New ‘buffer-free’ concept for GaN-on-SiC high electron mobility transistors reveals competitive microwave performance and device efficiency.
SweGaN selected as one of the Nordic Cleantech Open top 25 most innovative start-ups
SweGaN selected as one of the Nordic Cleantech Open top 25 most innovative start-ups.
Swedish GaN-on-SiC wafer specialist SweGaN reports robust 2019 YoY growth
Swedish GaN-on-SiC wafer specialist SweGaN reports robust 2019 YoY growth.
Featured cover of Applied physics letters
SweGaN Featured on cover of Applied physics letters.
Joint team from SweGaN, IEMN and Linköping University reveals ground-breaking epitaxial growth to produce new generation GaN-on-SiC epiwafers for power devices
SweGaN, IEMN and LiU reveal ground-breaking epitaxial growth to produce new generation epiwafers for power devices.
The pride of Taiwan in Sweden
SweGaN AB featured in Taiwan’s largest
newspaper, LibertyTimes, as “The pride of Taiwan in Sweden!
21st International vacuum congress
CEO, Olof Kordina, shared insight on SweGaN QuanFINE device material with a focus on industrialization.
