Semiconductor today: SweGaN gains former Ericsson CEO as senior advisor
Link to Semiconductor Today artice / August 30, 2023 SweGaN AB of Linköping, Sweden, which develops and manufactures custom gallium nitride on silicon carbide (GaN-on-SiC) epitaxial wafers (based on a unique growth technology) for telecom, satellite communications, defense and power electronics applications, says that former Ericsson CEO Sven-Christer Nilsson – who is an investor and […]
Compound Semiconductor: “Former Ericsson CEO becomes senior advisor to SweGaN”
Compound Semiconductor: “Former Ericsson CEO becomes senior advisor to SweGaN” Link to Compound Semiconductor article Sven-Christer Nilsson appointment linked to growing demand for GaN-on-SiC epiwafers in 5G telecoms, satcoms and EVs SweGaN AB, a European maker of GaN-on-SiC epiwafer, has welcomed Sven-Christer Nilsson, former CEO of telecoms giant Ericsson, to join the company as a […]
Semiconductor Today: SweGaN to build new HQ and GaN-on-SiC epiwafer production facility
SweGaN to build new HQ and GaN-on-SiC epiwafer production facility Link to article on Semiconductor Today SweGaN AB of Linköping, Sweden, which manufactures custom gallium nitride on silicon carbide (GaN-on-SiC) epitaxial wafers (based on a unique growth technology) for telecom, satellite, defense and power electronics applications, is to build a new headquarters including a high-capacity […]
Semiconductor Today: SweGaN to build new HQ and GaN-on-SiC epiwafer production facility
Link to article on Semiconductor Today SweGaN AB of Linköping, Sweden, which manufactures custom gallium nitride on silicon carbide (GaN-on-SiC) epitaxial wafers (based on a unique growth technology) for telecom, satellite, defense and power electronics applications, is to build a new headquarters including a high-capacity semiconductor production facility in Linköping. The new facility will be […]
NyTeknik.se: The super circuits for the green transition – why Sweden is at the forefront
NyTeknik.se: The super circuits for the green transition – why Sweden is at the forefront Link to NyTekni Article (in Swedish): The super circles for the green transition – why Sweden is at the forefront (nyteknik.se) REPORTER: Charlotta von Schultz – 9 FEB 2023 AT 07.53 Jr-Tai Chen is the co-founder and CEO of Swegan, […]
NyTeknik.se: The super circuits for the green transition – why Sweden is at the forefront
Link to NyTekni Article (in Swedish): The super circles for the green transition – why Sweden is at the forefront (nyteknik.se) REPORTER: Charlotta von Schultz – 9 FEB 2023 AT 07.53 Jr-Tai Chen is the co-founder and CEO of Swegan, the Linköping company that is now building a factory to manufacture gallium nitride semiconductor materials. Electric […]
Compound Semiconductor: Swedish maker of GaN-on-SiC epitaxial wafers to significantly boost capacity with latest funding round
Tuesday 4th October 2022 – Link to article Swedish maker of GaN-on-SiC epitaxial wafers to significantly boost capacity with latest funding round SweGaN, a Sweden-based maker of GaN-on-SiC epitaxial wafers has completed a Series A financing round totaling 1€12m. The financing was co-led by Intertech Ventures, Mount Wilson Ventures and leading European investor Atlantic Bridge, […]
Electronics Media: SweGaN and Chalmers University of Technology & SweGaN AB, manufacturer of custom-made GaN-on-SiC epitaxial wafers
Chalmers University of Technology and SweGaN AB, manufacturer of custom-made GaN-on-SiC epitaxial wafers for the devices used in telecom, satellite, defense, and power electronics, announce a publication in Electron Device Letters, demonstrating new state-of-the-art results of high-voltage GaN power devices enabled by Chalmers MIS-HEMT technology and SweGaN QuanFINE buffer-free GaN-on-SiC materials. Among key findings, the research identifies QuanFINE epiwafers as a highly […]
Microwave Journal: SweGaN Brings its GaN-on-SiC Epitaxial Solutions to Joint ESA Project
March 25, 2021 / Link to Microwave Journal article SweGaN AB, manufacturer of custom-made GaN-on-SiC epitaxial wafers for components and devices for telecom, satellite, defense and power electronics, announced it is partnering with Ferdinand-Braun-Institut (FBH) and University of Bristol in a European Space Agency (ESA) project “Kassiopeia” that includes a focus on SweGaN’s QuanFINE® GaN-on-SiC epitaxial materials to help boost the […]
