SweGaN and Chalmers University demonstrate high-voltage GaN power devices with a high breakdown voltage of >1600V and low leakage current of 22nA/mm on QuanFINE® epitaxial solutions

2022-06-21T13:51:19+02:00

Link to article on Electronics Media Chalmers University of Technology and SweGaN AB, manufacturer of custom-made GaN-on-SiC [...]

SweGaN and Chalmers University demonstrate high-voltage GaN power devices with a high breakdown voltage of >1600V and low leakage current of 22nA/mm on QuanFINE® epitaxial solutions2022-06-21T13:51:19+02:00
Go to Top