Location: On-site
Position: Full-time
Department: R&D
Reports to: R&D Manager
Join SweGaN as our next Device Integration Engineer
SweGaN is expanding, and we are now looking for a highly skilled Device Integration Engineer to strengthen our R&D team. In this role, you will work at the intersection of epitaxy, device characterization, customer collaboration and advanced semiconductor research. Your expertise will help us translate device performance into technical improvements and guide the next generation of GaN-based RF and power solutions.
If you enjoy deep technical work, solving complex problems and collaborating with both internal teams and leading research partners, this is the role for you.
Your Responsibilities
As our Device Integration Engineer, you will:
- interpret device-characterization results and identify improvement actions.
- lead and coordinate internal and collaborative R&D projects and provide technical support to customers and partners.
- translate customer and simulation feedback into technical requirements for epitaxy and device development and work closely with epitaxy and device engineers to implement process improvements.
- collaborate with TCAD specialists to align simulations with real device performance.
- prepare technical reports, present project progress and participate in external research meetings and funding activities.
- monitor technology and market trends within GaN devices and contribute technical insights to SweGaN’s long-term R&D direction.
Who We Are Looking For
We are looking for a technically strong, analytical and collaborative engineer who enjoys working hands-on with device physics and semiconductor data. You thrive in an innovative environment and take responsibility for driving your work forward. You are willing to travel when needed, and you are motivated to grow in your role and shape it in a way that contributes to the company’s development, innovation and long-term success.
Required Qualifications
- PhD or master’s degree in electrical engineering, Physics, Materials Science or a similar field.
- Experience working with GaN HEMT RF or power devices.
- Strong understanding of device physics, processing steps and characterization techniques.
- Experience interpreting TCAD simulations or collaborating with simulation engineers.
- Excellent communication skills in English.
- Ability to work independently while collaborating effectively across engineering functions.
- Willingness to travel to customer visits, project meetings and conferences.
Meritorious Skills
- Experience in customer-facing engineering or technical roles.
- Familiarity with MOCVD-grown GaN epitaxy and related process parameters.
- Knowledge of GaN RF and power-device markets and typical applications.
- Experience working in collaborative research projects or EU-funded programs.
- Background in reliability testing, device modelling or advanced characterization methods.
What We Offer and How to Join Us
At SweGaN, you will be part of a fast-growing and innovation-driven company at the forefront of GaN technology. You will work hands-on with advanced epitaxy and device development, collaborate with world-class research partners and contribute directly to products that shape the future of RF and power electronics.
You will join a supportive and highly skilled team where your expertise is valued, your ideas matter and your work have real impact. We combine the agility of a scale-up with the structure of an established business, creating an environment where you can grow, innovate and take ownership of your technical area.
If you want to play an important role in advancing next-generation semiconductor technology, we would be excited to hear from you. Apply today and become part of SweGaN’s journey forward.
Send your CV and Cover letter to: career@swegan.se
Mark the application with: Device Integration Engineer
Contact person: Sarah Wallberg (HRBP)