Recapping an exciting 2022 at SweGaN
As the year comes to a close, we would like to take the opportunity to thank our customers, research partners, investors, and friends in the market for a great year. We couldn’t make it happen without you.
Joint research & new qualification processes
SweGaN kicked off 2022 with a number of exciting joint research papers – a great way to start the year. Our ongoing research collaborations with multiple prestigious research organizations and EU projects continues to cement our position in the industry as both thought leader and key contributor of high-quality GaN materials to the global industry.
We have completed two qualification processes by leading manufacturers and continue to focus on new qualification processes to secure major frame contracts in 2023. As SweGaN enters its next phases of growth, we have over 30 paying customers and are in qualification for a wide range of semiconductor applications in Europe, the US and Asia.
Proud to be recognized in leading media
The SweGaN brand has continued to gain recognition and has been featured in the most prominent international industry publications, such as Compound Semiconductor and many more, and key highlights in Sweden’s financial news media. We are very proud to see our team’s achievements highlighted in global and local media.
Major Investment Round backing major growth plans
SweGaN announced a Series A financing round totaling 125 MSEK (12M Euro) in September. The financing was co-led by Intertech Ventures Inc, Mount Wilson Ventures and leading European investor Atlantic Bridge, with participation by STOAF of Sweden and global fabless semiconductor leader MediaTek, forming a powerful global network from the US, Taiwan, and Europe backing our ambitious growth plans.
In 2023 and with a future-oriented vision, SweGaN is propelling at full speed to significantly expand production capacity to meet market demand from major suppliers of 5G base stations, defense radars, low-orbit satellite communications, EV’s and more, while also expanding our team to boost engineering, sales, and production staff.
New CEO, Board members & executives
(Jr-Tai Chen, CEO)
New CEO
In a major milestone and new company direction, SweGaN’s Board of Directors announced the appointment of Jr-Tai “Ted” Chen as new CEO in alignment with completion of the Series A investment round to head the company’s vision to become a major provider of semiconductor materials to the global market. Ted co-founded SweGaN in 2014 and invented the Company’s proprietary, benchmark QuanFINE® technology as its Chief Technology Officer.
Executive Board & Management announcements:
Introduced new employees
We had the opportunity featured some new team members on our LinkedIn channel, including Carl Hemmingsson , Director of Engineering, and Omar Hendieh, Production Operator, and look forward to introducing more team members as we move forward into 2023.
Ground-breaking research
During the year, SweGaN published a range of ground-breaking research papers in collaboration with leading research institutes. Check out the links below for more details:
- Publication in Electron Device Letters highlighting new state-of-the-art results of high-voltage GaN power devices enabled by Chalmers MIS-HEMT technology and SweGaN QuanFINE® buffer-free GaN-on-SiC materials.
- SweGaN and Chalmers University demonstrated ““High Voltage and Low Leakage GaN-on-SiC MISHEMTs on a “Buffer-Free” Heterostructure”
- PSS Applications and Materials Science: “Impact of the Channel Thickness on Electron Confinement in MOCVD-Grown High Breakdown Buffer-free AlGaN/GaN Heterostructures”
- Research paper together with Cornell University: “ [2204.12113] Super-High-Frequency Low-Loss Sezawa Mode SAW Devices in a GaN/SiC Platform (arxiv.org),
Events
The SweGaN team participated in a number of exciting events around the globe including the IWN 2022 International Workshop on Nitride Semiconductors, Berlin, Germany, where Ding Yuan Chen, GaN Device Engineer at SweGaN, gave an oral presentation: “Improve 2DEG confinement in 70 nm AlGaN/GaN HEMTs by reducing the GaN channel thickness in buffer-free heterostructures”.
We participated at the Business Sweden Asia-Pacific expo and conference in South Korea meeting industry business leaders, key customers & partners, plus forging new relationships. In June, CTO (now CEO), Jr. Tai Chen shared valuable insight on the novel GaN-on-SiC structure, QuanFINE®, at the GaN Marathon 2022, June 20–22, Venice, Italy.
In summary
On behalf of the SweGaN team, thank you for a great 2022 and wishing you all a happy holiday season! Stay tuned for more from the SweGaN in 2023!
-Jr. Tai Chen, CEO at SweGaN
