SweGaN, Ericsson, Saab, and Chalmers Collaborate for 6G GaN Power Amplifiers

Linköping, Sweden – August 28th, 2025

SweGaN, a European semiconductor manufacturer specializing in GaN-on-SiC epitaxial wafers, announces the launch of a Vinnova-funded project with Ericsson, Saab, and Chalmers University of Technology, aiming to revolutionize GaN-based power amplifier (PA) technology for next-generation 6G networks.

(Link to the press release in Swedish)

The project targets the 7–15 GHz frequency range (X/Ku bands), a critical spectrum for future 6G applications. By leveraging SweGaN’s proprietary QuanFINE® epitaxial GaN-on-SiC solutions, the collaboration will deepen understanding of the material properties and the HEMT device characteristics and develop high-efficiency PA circuits that support energy-efficient, high-capacity wireless systems.

“This Vinnova-backed collaboration is a major milestone for SweGaN and our partners,” said Jr-Tai Chen, CEO of SweGaN. “With this project, we’re combining world-class expertise from telecom, defense, and academia to unlock the full potential of our QuanFINE® materials for 6G.” The project ensures vertical integration across materials, device processing, and system-level design, and it follows a dual-track approach:

Academic Track: Focuses on the influence and process variations on HEMT device-level performance by advanced modeling. The goal is to extract empirical models and define design boundaries for optimal PA efficiency.

Industrial Track: Centers on PA design, fabrication, and benchmarking using state-of-the-art foundry processes. Industry partners will supply high-performance devices for modeling and validation, ensuring alignment with real-world system needs.

The collaboration will deliver insights into how epitaxial design, processing, and circuit architecture impact device and system-level performance.

“This collaboration strengthens the bridge between civilian and defense technologies. By working closely with leading partners across the value chain, we accelerate the development of RF technologies that will have real-world impact in both defense and civilian domains,” said Johan Carlert, Head of Microwave and Antenna Design at Saab.

“At Chalmers, we’re thrilled to contribute our modeling and device expertise to a project with such high industrial relevance,” said Christian Fager, Professor at Chalmers University of Technology.

About the project

• GaN6G+: Unlocking Performance and Efficiency in Future 6G Power Amplifiers.
• Duration: September 2025 to August 2027