From the CEO: Recapping an exciting 2022 at SweGaN From the CEO: Recapping an exciting 2022 at SweGaNLeslie Johnsen2022-12-19T08:31:39+01:00December 16th, 2022|
SweGaN Secures €12m Investment – Swedish maker of GaN-on-SiC epitaxial wafers to significantly boost capacity with latest funding round SweGaN Secures €12m Investment – Swedish maker of GaN-on-SiC epitaxial wafers to significantly boost capacity with latest funding roundLeslie Johnsen2022-10-10T09:28:21+02:00October 10th, 2022|
SweGaN and Chalmers University demonstrate high-voltage GaN power devices with a high breakdown voltage of >1600V and low leakage current of 22nA/mm on QuanFINE® epitaxial solutions SweGaN and Chalmers University demonstrate high-voltage GaN power devices with a high breakdown voltage of >1600V and low leakage current of 22nA/mm on QuanFINE® epitaxial solutionsLeslie Johnsen2022-06-21T13:51:19+02:00June 21st, 2022|
GaN-on-SiC semiconductor manufacturer SweGaN boosts executive team – appoints Henrik Tölander as COOLeslie Johnsen2022-11-01T07:41:56+01:00November 1st, 2022|
European semiconductor manufacturer SweGaN secures 12 million Euro investment to significantly expand production capacity, appoints new CEOLeslie Johnsen2022-10-04T10:00:01+02:00October 4th, 2022|
SweGaN and Chalmers University demonstrate high-voltage GaN power devices with a high breakdown voltage of >1600V and low leakage current of 22nA/mm on QuanFINE® epitaxial solutionsLeslie Johnsen2022-12-16T10:41:04+01:00June 21st, 2022|