NewsroomSweGaN2021-05-09T19:52:39+02:00

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SweGaN and Chalmers University demonstrate high-voltage GaN power devices with a high breakdown voltage of >1600V and low leakage current of 22nA/mm on QuanFINE® epitaxial solutions

SweGaN and Chalmers University demonstrate high-voltage GaN power devices with a high breakdown voltage of >1600V and low leakage current of 22nA/mm on QuanFINE® epitaxial solutions

Leslie Johnsen2022-06-21T13:51:19+02:00June 21st, 2022|

SweGaN introduces new Head of Production, member of management team

SweGaN introduces new Head of Production, member of management team

Leslie Johnsen2021-10-05T12:36:43+02:00October 5th, 2021|

SweGaN Brings its GaN-on-SiC Epitaxial Solutions to Joint ESA Project

SweGaN Brings its GaN-on-SiC Epitaxial Solutions to Joint ESA Project

Leslie Johnsen2021-03-26T13:25:10+01:00March 26th, 2021|

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Press releases

European semiconductor manufacturer SweGaN secures 12 million Euro investment to significantly expand production capacity, appoints new CEO

Leslie Johnsen2022-10-04T10:00:01+02:00October 4th, 2022|

SweGaN and Chalmers University demonstrate high-voltage GaN power devices with a high breakdown voltage of >1600V and low leakage current of 22nA/mm on QuanFINE® epitaxial solutions

Leslie Johnsen2022-06-21T07:10:22+02:00June 21st, 2022|

SweGaN brings its unique GaN-on-SiC epitaxial solutions to joint ESA project aiming Ka-band GaN MMICs for satellite antennas

Leslie Johnsen2021-03-24T18:14:38+01:00March 25th, 2021|

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Insights and featured research

“Microwave Performance of ‘Buffer-Free’ GaN-on-SiC High Electron Mobility Transistors” IEEE ELECTRON DEVICE LETTERS, 41, 828 (2020) DOI: https://doi.org/10.1109/LED.2020.2988074

“Transmorphic epitaxial growth of AlN nucleation layers on SiC substrates for high breakdown thin GaN transistors” Appl. Phys. Lett. 115, 221601 (2019) DOI: https://doi.org/10.1063/1.5123374

“Enhanced Mobility in InAlN/AlN/GaN HEMTs Using a GaN Interlayer” IEEE TRANSACTIONS ON ELECTRON DEVICES, 66, 2910-2915 (2019) DOI: https://doi.org/10.1109/TED.2019.2914674

“A GaNSiC hybrid material for high-frequency and power electronics” Appl. Phys. Lett. 113, 041605 (2018) DOI: https://doi.org/10.1063/1.5042049

“A versatile low-resistance ohmic contact process with ohmic recess and low-temperature annealing for GaN HEMTs” DOI: https://doi.org/10.1088/1361-6641/aad7a8

“Low thermal resistance of a GaN on SiC transistor structure with improved structural properties at the interface” J. Crystal Growth. 428, 54 (2015) DOI: https://doi.org/10.1016/j.jcrysgro.2015.07.021

“Room temperature mobility above 2250 cm2 Vs of two dimensional electron gas in a sharp interface AlGaN GaN heterostructure” Appl. Phys. Lett. 106, 251601 (2015) DOI: https://doi.org/10.1063/1.4922877

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Crafting wide bandgap materials for a better world.

SweGaN is a producer of GaN-on-SiC epiwafers. We are devoted to supply customized high performance material to give to our customers competitive advantages.

Crafting wide bandgap materials for a better world.

SweGaN is a producer of GaN-on-SiC epiwafers. We are devoted to supply customized high performance material to give to our customers competitive advantages.

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