NewsroomSweGaN2021-05-09T19:52:39+02:00

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From the CEO: Recapping an exciting 2022 at SweGaN

From the CEO: Recapping an exciting 2022 at SweGaN

Leslie Johnsen2022-12-19T08:31:39+01:00December 16th, 2022|

SweGaN Secures €12m Investment – Swedish maker of GaN-on-SiC epitaxial wafers to significantly boost capacity with latest funding round

SweGaN Secures €12m Investment – Swedish maker of GaN-on-SiC epitaxial wafers to significantly boost capacity with latest funding round

Leslie Johnsen2022-10-10T09:28:21+02:00October 10th, 2022|

SweGaN and Chalmers University demonstrate high-voltage GaN power devices with a high breakdown voltage of >1600V and low leakage current of 22nA/mm on QuanFINE® epitaxial solutions

SweGaN and Chalmers University demonstrate high-voltage GaN power devices with a high breakdown voltage of >1600V and low leakage current of 22nA/mm on QuanFINE® epitaxial solutions

Leslie Johnsen2022-06-21T13:51:19+02:00June 21st, 2022|

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Press releases

GaN-on-SiC semiconductor manufacturer SweGaN boosts executive team – appoints Henrik Tölander as COO

Leslie Johnsen2022-11-01T07:41:56+01:00November 1st, 2022|

European semiconductor manufacturer SweGaN secures 12 million Euro investment to significantly expand production capacity, appoints new CEO

Leslie Johnsen2022-10-04T10:00:01+02:00October 4th, 2022|

SweGaN and Chalmers University demonstrate high-voltage GaN power devices with a high breakdown voltage of >1600V and low leakage current of 22nA/mm on QuanFINE® epitaxial solutions

Leslie Johnsen2022-12-16T10:41:04+01:00June 21st, 2022|

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Insights and featured research

“Microwave Performance of ‘Buffer-Free’ GaN-on-SiC High Electron Mobility Transistors” IEEE ELECTRON DEVICE LETTERS, 41, 828 (2020) DOI: https://doi.org/10.1109/LED.2020.2988074

“Transmorphic epitaxial growth of AlN nucleation layers on SiC substrates for high breakdown thin GaN transistors” Appl. Phys. Lett. 115, 221601 (2019) DOI: https://doi.org/10.1063/1.5123374

“Enhanced Mobility in InAlN/AlN/GaN HEMTs Using a GaN Interlayer” IEEE TRANSACTIONS ON ELECTRON DEVICES, 66, 2910-2915 (2019) DOI: https://doi.org/10.1109/TED.2019.2914674

“A GaNSiC hybrid material for high-frequency and power electronics” Appl. Phys. Lett. 113, 041605 (2018) DOI: https://doi.org/10.1063/1.5042049

“A versatile low-resistance ohmic contact process with ohmic recess and low-temperature annealing for GaN HEMTs” DOI: https://doi.org/10.1088/1361-6641/aad7a8

“Low thermal resistance of a GaN on SiC transistor structure with improved structural properties at the interface” J. Crystal Growth. 428, 54 (2015) DOI: https://doi.org/10.1016/j.jcrysgro.2015.07.021

“Room temperature mobility above 2250 cm2 Vs of two dimensional electron gas in a sharp interface AlGaN GaN heterostructure” Appl. Phys. Lett. 106, 251601 (2015) DOI: https://doi.org/10.1063/1.4922877

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Crafting wide bandgap materials for a better world.

SweGaN is a producer of GaN-on-SiC epiwafers. We are devoted to supply customized high performance material to give to our customers competitive advantages.

Crafting wide bandgap materials for a better world.

SweGaN is a producer of GaN-on-SiC epiwafers. We are devoted to supply customized high performance material to give to our customers competitive advantages.

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