The conventional Thermal Boundary Resistance (TBR) in the GaN-SiC interfacial region causes up to 40 % additional temperature rise of the transistor channel temperature. Thanks to our ultra-low TBR technique, we have been able to reduce this additional temperature rise to a negligible level and the outstanding structural quality of the thin AlN nucleation layer significantly improves the regional thermal conductivities. Using isotope enriched SiC substrates can also enhance the thermal conductivity of the entire device structure by up to 25 %.
This allows us to address one of the biggest challenges with power RF devices: reliability. By reducing the operational temperature by 25 °C, the device’s lifetime is increased by a factor of ten.
The excellent structural quality of GaN epitaxial layers grown by SweGaN’s high-temperature process typically exhibits a threading dislocation density in the low 108 cm2 regime. This is the best GaN crystalline quality in the class, which not only guarantees the GaN robustness but also dramatically reduces the risk of device failure due to structural defects.