Scientific publications SweGaN’s scientific publications“Microwave Performance of ‘Buffer-Free’ GaN-on-SiC High Electron Mobility Transistors” IEEE ELECTRON DEVICE LETTERS, 41, 828 (2020) DOI: https://doi.org/10.1109/LED.2020.2988074 “Transmorphic epitaxial growth of AlN nucleation layers on SiC substrates for high breakdown thin GaN transistors” Appl. Phys. Lett. 115, 221601 (2019) DOI: https://doi.org/10.1063/1.5123374 “Enhanced Mobility in InAlN/AlN/GaN HEMTs Using a GaN Interlayer” IEEE TRANSACTIONS ON ELECTRON DEVICES, 66, 2910-2915 (2019) DOI: https://doi.org/10.1109/TED.2019.2914674 “A GaNSiC hybrid material for high-frequency and power electronics” Appl. Phys. Lett. 113, 041605 (2018) DOI: https://doi.org/10.1063/1.5042049 “A versatile low-resistance ohmic contact process with ohmic recess and low-temperature annealing for GaN HEMTs” DOI: https://doi.org/10.1088/1361-6641/aad7a8 “Low thermal resistance of a GaN on SiC transistor structure with improved structural properties at the interface” J. Crystal Growth. 428, 54 (2015) DOI: https://doi.org/10.1016/j.jcrysgro.2015.07.021 “Room temperature mobility above 2250 cm2 Vs of two dimensional electron gas in a sharp interface AlGaN GaN heterostructure” Appl. Phys. Lett. 106, 251601 (2015) DOI: https://doi.org/10.1063/1.4922877 SweGaN2021-03-18T22:18:51+01:00