Thin gallium nitride on silicon carbide high-power and high-frequency electronics

September 27th, 2018. Mike Cooke, Semiconductor today.

"Researchers based in Sweden have developed thinner III-nitride structures on silicon carbide (SiC) with a view to high-power and high-frequency thin high-electron-mobility transistors (T-HEMTs) and other devices [Jr-Tai Chen et al, Appl. Phys. Lett., vol113, p041605, 2018]…"

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New Thin GaN Structure on SiC Improves RF Performance

August 20th, 2018. Pat Hindle, Microwave Journal.

"SweGaN is a spin-off from Linköping University that recently announced a new GaN-on-SiC HEMT heterostructure, QuanFINE ™, built on the concept of a GaN−SiC hybrid material that combines the high-electron-velocity thin GaN with the high-breakdown bulk SiC…"

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Swegan är världsbäst på GaN-epitaxi

November 8th, 2017. Anna Wennberg, Elektronik Tidningen.

"Linköpingsföretaget Swegan tillverkar material som är bas för rf-kretsar i galliumnitrid. Ovanpå kiselkarbidskivor bygger företaget sin GaN-struktur som får högre kvalitet än konkurrenternas. Telekom och rymdindustrin påstås kunna dra nytta av expertisen. Närmast står en uppskalning på agendan..."

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SweGaN Strengthens Position With New Share Issue

September 26th, 2017.Compound Semiconductor.

"SweGaN, a Swedish manufacturer of custom-made epitaxial wafers of group III-nitrides, has raised close to $750,000 through a summer investment round…"

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