Generated by All in One SEO v4.9.5.1, this is an llms.txt file, used by LLMs to index the site. # SweGaN Power in the Layers ## Sitemaps - [XML Sitemap](https://swegan.se/sitemap.xml): Contains all public & indexable URLs for this website. ## Posts - [Semiconductor manufacturer SweGaN appoints Swedish industrialist Leif Johansson to Board and Navigare Ventures’ Pontus de Laval to Chairman](https://swegan.se/semiconductor-manufacturer-swegan-appoints-swedish-industrialist-leif-johansson-to-board-and-navigare-ventures-pontus-de-laval-to-chairman/) - Linköping, Sweden, June 11, 2025: SweGaN AB, a European semiconductor manufacturer specializing in customengineered Gallium Nitride on Silicon Carbide (GaN-on-SiC) epitaxial wafers, today announces several significant corporate developments. Pontus de Laval, Senior Advisor at one of SweGaN’s major shareholders, Navigare Ventures, has been appointed Chairman of the Board. In addition, prominent Swedish industrialist Leif Johansson GaN HEMT epitaxial solution Linköping, Sweden, June 11, 2025: SweGaN AB, a European semiconductor manufacturer specializing in customengineered Gallium Nitride on Silicon Carbide (GaN-on-SiC) epitaxial wafers, today announces several significant corporate developments. Pontus de Laval, Senior Advisor at one of SweGaN’s major shareholders, Navigare Ventures, has been appointed Chairman of the Board. In addition, prominent Swedish industrialist Leif Johansson QuanFINE® epitaxial solutions Linköping, Sweden, June 11, 2025: SweGaN AB, a European semiconductor manufacturer specializing in customengineered Gallium Nitride on Silicon Carbide (GaN-on-SiC) epitaxial wafers, today announces several significant corporate developments. Pontus de Laval, Senior Advisor at one of SweGaN’s major shareholders, Navigare Ventures, has been appointed Chairman of the Board. In addition, prominent Swedish industrialist Leif Johansson GaN epitaxial solutions Linköping, Sweden, June 11, 2025: SweGaN AB, a European semiconductor manufacturer specializing in customengineered Gallium Nitride on Silicon Carbide (GaN-on-SiC) epitaxial wafers, today announces several significant corporate developments. Pontus de Laval, Senior Advisor at one of SweGaN’s major shareholders, Navigare Ventures, has been appointed Chairman of the Board. In addition, prominent Swedish industrialist Leif Johansson wide-bandgap semiconductors Linköping, Sweden, June 11, 2025: SweGaN AB, a European semiconductor manufacturer specializing in customengineered Gallium Nitride on Silicon Carbide (GaN-on-SiC) epitaxial wafers, today announces several significant corporate developments. Pontus de Laval, Senior Advisor at one of SweGaN’s major shareholders, Navigare Ventures, has been appointed Chairman of the Board. In addition, prominent Swedish industrialist Leif Johansson epitaxial growth Linköping, Sweden, June 11, 2025: SweGaN AB, a European semiconductor manufacturer specializing in customengineered Gallium Nitride on Silicon Carbide (GaN-on-SiC) epitaxial wafers, today announces several significant corporate developments. Pontus de Laval, Senior Advisor at one of SweGaN’s major shareholders, Navigare Ventures, has been appointed Chairman of the Board. In addition, prominent Swedish industrialist Leif Johansson epitaxial solutions Linköping, Sweden, June 11, 2025: SweGaN AB, a European semiconductor manufacturer specializing in customengineered Gallium Nitride on Silicon Carbide (GaN-on-SiC) epitaxial wafers, today announces several significant corporate developments. Pontus de Laval, Senior Advisor at one of SweGaN’s major shareholders, Navigare Ventures, has been appointed Chairman of the Board. In addition, prominent Swedish industrialist Leif Johansson Transmorphic HeteroepitaxyLinköping, Sweden, June 11, 2025: SweGaN AB, a European semiconductor manufacturer specializing in customengineered Gallium Nitride on Silicon Carbide (GaN-on-SiC) epitaxial wafers, today announces several significant corporate developments. Pontus de Laval, Senior Advisor at one of SweGaN’s major shareholders, Navigare Ventures, has been appointed Chairman of the Board. In addition, prominent Swedish industrialist Leif Johansson GaN-on-SiC epitaxial solutionsSweGaN announces Pontus de Laval, Senior Advisor at one of SweGaN’s major shareholders, Navigare Ventures, has been appointed Chairman of the Board. In addition, prominent Swedish industrialist Leif Johansson has joined the SweGaN Board. - [SweGaN, Ericsson, Saab, and Chalmers Collaborate for 6G GaN Power Amplifiers](https://swegan.se/swegan-ericsson-saab-and-chalmers-collaborate-for-6g-gan-power-amplifiers/) - Linköping, Sweden – August 28th, 2025 SweGaN, a European semiconductor manufacturer specializing in GaN-on-SiC epitaxial wafers, announces the launch of a Vinnova-funded project with Ericsson, Saab, and Chalmers University of Technology, aiming to revolutionize GaN-based power amplifier (PA) technology for next-generation 6G networks. (Link to the press release in Swedish) The project targets the 7–15 GaN HEMT epitaxial solution Linköping, Sweden – August 28th, 2025 SweGaN, a European semiconductor manufacturer specializing in GaN-on-SiC epitaxial wafers, announces the launch of a Vinnova-funded project with Ericsson, Saab, and Chalmers University of Technology, aiming to revolutionize GaN-based power amplifier (PA) technology for next-generation 6G networks. (Link to the press release in Swedish) The project targets the 7–15 QuanFINE® epitaxial solutions Linköping, Sweden – August 28th, 2025 SweGaN, a European semiconductor manufacturer specializing in GaN-on-SiC epitaxial wafers, announces the launch of a Vinnova-funded project with Ericsson, Saab, and Chalmers University of Technology, aiming to revolutionize GaN-based power amplifier (PA) technology for next-generation 6G networks. (Link to the press release in Swedish) The project targets the 7–15 GaN epitaxial solutions Linköping, Sweden – August 28th, 2025 SweGaN, a European semiconductor manufacturer specializing in GaN-on-SiC epitaxial wafers, announces the launch of a Vinnova-funded project with Ericsson, Saab, and Chalmers University of Technology, aiming to revolutionize GaN-based power amplifier (PA) technology for next-generation 6G networks. (Link to the press release in Swedish) The project targets the 7–15 wide-bandgap semiconductors Linköping, Sweden – August 28th, 2025 SweGaN, a European semiconductor manufacturer specializing in GaN-on-SiC epitaxial wafers, announces the launch of a Vinnova-funded project with Ericsson, Saab, and Chalmers University of Technology, aiming to revolutionize GaN-based power amplifier (PA) technology for next-generation 6G networks. (Link to the press release in Swedish) The project targets the 7–15 epitaxial growth Linköping, Sweden – August 28th, 2025 SweGaN, a European semiconductor manufacturer specializing in GaN-on-SiC epitaxial wafers, announces the launch of a Vinnova-funded project with Ericsson, Saab, and Chalmers University of Technology, aiming to revolutionize GaN-based power amplifier (PA) technology for next-generation 6G networks. (Link to the press release in Swedish) The project targets the 7–15 epitaxial solutions Linköping, Sweden – August 28th, 2025 SweGaN, a European semiconductor manufacturer specializing in GaN-on-SiC epitaxial wafers, announces the launch of a Vinnova-funded project with Ericsson, Saab, and Chalmers University of Technology, aiming to revolutionize GaN-based power amplifier (PA) technology for next-generation 6G networks. (Link to the press release in Swedish) The project targets the 7–15 Transmorphic HeteroepitaxyLinköping, Sweden – August 28th, 2025 SweGaN, a European semiconductor manufacturer specializing in GaN-on-SiC epitaxial wafers, announces the launch of a Vinnova-funded project with Ericsson, Saab, and Chalmers University of Technology, aiming to revolutionize GaN-based power amplifier (PA) technology for next-generation 6G networks. (Link to the press release in Swedish) The project targets the 7–15 GaN-on-SiC epitaxial solutionsSweGaN partners with Ericsson, Saab, and Chalmers to develop high-efficiency GaN-based power amplifiers for 6G, combining advanced modeling and fabrication to optimize performance across telecom and defense applications. - [Wrapping up 2025: Navigating in a challenging year](https://swegan.se/wrapping-up-2025-navigating-in-a-challenging-year/) - In 2025, SweGaN focused on resilience, investing in long-term strategies to build a strong foundation for sustainable growth - [SweGaN, Ericsson, Saab och Chalmers utvecklar framtidens 6G GaN effektförstärkare](https://swegan.se/swegan-ericsson-saab-och-chalmers-utvecklar-framtidens-6g-gan-effektforstarkare/) - Linköping, Sweden – 28 augusti, 2025 SweGaN, en europeisk halvledartillverkare som specialiserar sig på epitaxiala wafers av GaN-SiC, tillkännager lanseringen av ett Vinnova-finansierat projekt tillsammans med Ericsson, Saab, och Chalmers tekniska högskola, med syftet att revolutionera GaN-baserad effektförstärkarteknik (PA) för nästa generations 6G-nätverk. (Länk till pressmeddelandet på engelska) Projektet riktar sig mot frekvensområdet GaN HEMT epitaxial solution Linköping, Sweden – 28 augusti, 2025 SweGaN, en europeisk halvledartillverkare som specialiserar sig på epitaxiala wafers av GaN-SiC, tillkännager lanseringen av ett Vinnova-finansierat projekt tillsammans med Ericsson, Saab, och Chalmers tekniska högskola, med syftet att revolutionera GaN-baserad effektförstärkarteknik (PA) för nästa generations 6G-nätverk. (Länk till pressmeddelandet på engelska) Projektet riktar sig mot frekvensområdet QuanFINE® epitaxial solutions Linköping, Sweden – 28 augusti, 2025 SweGaN, en europeisk halvledartillverkare som specialiserar sig på epitaxiala wafers av GaN-SiC, tillkännager lanseringen av ett Vinnova-finansierat projekt tillsammans med Ericsson, Saab, och Chalmers tekniska högskola, med syftet att revolutionera GaN-baserad effektförstärkarteknik (PA) för nästa generations 6G-nätverk. (Länk till pressmeddelandet på engelska) Projektet riktar sig mot frekvensområdet GaN epitaxial solutions Linköping, Sweden – 28 augusti, 2025 SweGaN, en europeisk halvledartillverkare som specialiserar sig på epitaxiala wafers av GaN-SiC, tillkännager lanseringen av ett Vinnova-finansierat projekt tillsammans med Ericsson, Saab, och Chalmers tekniska högskola, med syftet att revolutionera GaN-baserad effektförstärkarteknik (PA) för nästa generations 6G-nätverk. (Länk till pressmeddelandet på engelska) Projektet riktar sig mot frekvensområdet wide-bandgap semiconductors Linköping, Sweden – 28 augusti, 2025 SweGaN, en europeisk halvledartillverkare som specialiserar sig på epitaxiala wafers av GaN-SiC, tillkännager lanseringen av ett Vinnova-finansierat projekt tillsammans med Ericsson, Saab, och Chalmers tekniska högskola, med syftet att revolutionera GaN-baserad effektförstärkarteknik (PA) för nästa generations 6G-nätverk. (Länk till pressmeddelandet på engelska) Projektet riktar sig mot frekvensområdet epitaxial growth Linköping, Sweden – 28 augusti, 2025 SweGaN, en europeisk halvledartillverkare som specialiserar sig på epitaxiala wafers av GaN-SiC, tillkännager lanseringen av ett Vinnova-finansierat projekt tillsammans med Ericsson, Saab, och Chalmers tekniska högskola, med syftet att revolutionera GaN-baserad effektförstärkarteknik (PA) för nästa generations 6G-nätverk. (Länk till pressmeddelandet på engelska) Projektet riktar sig mot frekvensområdet epitaxial solutions Linköping, Sweden – 28 augusti, 2025 SweGaN, en europeisk halvledartillverkare som specialiserar sig på epitaxiala wafers av GaN-SiC, tillkännager lanseringen av ett Vinnova-finansierat projekt tillsammans med Ericsson, Saab, och Chalmers tekniska högskola, med syftet att revolutionera GaN-baserad effektförstärkarteknik (PA) för nästa generations 6G-nätverk. (Länk till pressmeddelandet på engelska) Projektet riktar sig mot frekvensområdet Transmorphic HeteroepitaxyLinköping, Sweden – 28 augusti, 2025 SweGaN, en europeisk halvledartillverkare som specialiserar sig på epitaxiala wafers av GaN-SiC, tillkännager lanseringen av ett Vinnova-finansierat projekt tillsammans med Ericsson, Saab, och Chalmers tekniska högskola, med syftet att revolutionera GaN-baserad effektförstärkarteknik (PA) för nästa generations 6G-nätverk. (Länk till pressmeddelandet på engelska) Projektet riktar sig mot frekvensområdet GaN-on-SiC epitaxial solutionsSweGaN inleder samarbete med Ericsson, Saab och Chalmers för att utveckla högpresterande GaN-baserade effektförstärkare för framtida 6G-nätverk. Genom avancerad modellering och tillverkning ska projektet optimera prestanda för både telekom- och försvarstillämpningar. - [SweGaN Privacy Policy](https://swegan.se/swegan-privacy-policy/) - This Privacy Policy helps you understand which personal data we collect about you, why we collect it, and how we use it. This policy also describes your rights as a data subject and how you can exercise these rights. Who is responsible for the processing of your personal data? SweGan AB, company registration no. GaN HEMT epitaxial solution This Privacy Policy helps you understand which personal data we collect about you, why we collect it, and how we use it. This policy also describes your rights as a data subject and how you can exercise these rights. Who is responsible for the processing of your personal data? SweGan AB, company registration no. QuanFINE® epitaxial solutions This Privacy Policy helps you understand which personal data we collect about you, why we collect it, and how we use it. This policy also describes your rights as a data subject and how you can exercise these rights. Who is responsible for the processing of your personal data? SweGan AB, company registration no. GaN epitaxial solutions This Privacy Policy helps you understand which personal data we collect about you, why we collect it, and how we use it. This policy also describes your rights as a data subject and how you can exercise these rights. Who is responsible for the processing of your personal data? SweGan AB, company registration no. wide-bandgap semiconductors This Privacy Policy helps you understand which personal data we collect about you, why we collect it, and how we use it. This policy also describes your rights as a data subject and how you can exercise these rights. Who is responsible for the processing of your personal data? SweGan AB, company registration no. epitaxial growth This Privacy Policy helps you understand which personal data we collect about you, why we collect it, and how we use it. This policy also describes your rights as a data subject and how you can exercise these rights. Who is responsible for the processing of your personal data? SweGan AB, company registration no. epitaxial solutions This Privacy Policy helps you understand which personal data we collect about you, why we collect it, and how we use it. This policy also describes your rights as a data subject and how you can exercise these rights. Who is responsible for the processing of your personal data? SweGan AB, company registration no. Transmorphic HeteroepitaxyThis Privacy Policy helps you understand which personal data we collect about you, why we collect it, and how we use it. This policy also describes your rights as a data subject and how you can exercise these rights. Who is responsible for the processing of your personal data? SweGan AB, company registration no. GaN-on-SiC epitaxial solutionsThis Privacy Policy helps you understand which personal data we collect about you, why we collect it, and how we use it. This policy also describes your rights as a data subject and how you can exercise these rights. Who is responsible for the processing of your personal data? SweGan AB, company registration no. - [SweGaN partnering in EU Closer semiconductor consortium](https://swegan.se/swegan-partnering-in-eus-closer-semiconductor-consortium/) - SweGaN is proud to partner in the EU funded CLOSER semiconductor project, joining a consortium of 32 organizations from 8 European countries to advance Europe’s circular economy for microelectronics. ♻️SweGaN’s Anders Lundskog and Ding Yuan Chen participated in last week’s kick-off meeting in Rome, organized by University of Rome Tor Vergata, scientific coordinator of the GaN HEMT epitaxial solution SweGaN is proud to partner in the EU funded CLOSER semiconductor project, joining a consortium of 32 organizations from 8 European countries to advance Europe’s circular economy for microelectronics. ♻️SweGaN’s Anders Lundskog and Ding Yuan Chen participated in last week’s kick-off meeting in Rome, organized by University of Rome Tor Vergata, scientific coordinator of the QuanFINE® epitaxial solutions SweGaN is proud to partner in the EU funded CLOSER semiconductor project, joining a consortium of 32 organizations from 8 European countries to advance Europe’s circular economy for microelectronics. ♻️SweGaN’s Anders Lundskog and Ding Yuan Chen participated in last week’s kick-off meeting in Rome, organized by University of Rome Tor Vergata, scientific coordinator of the GaN epitaxial solutions SweGaN is proud to partner in the EU funded CLOSER semiconductor project, joining a consortium of 32 organizations from 8 European countries to advance Europe’s circular economy for microelectronics. ♻️SweGaN’s Anders Lundskog and Ding Yuan Chen participated in last week’s kick-off meeting in Rome, organized by University of Rome Tor Vergata, scientific coordinator of the wide-bandgap semiconductors SweGaN is proud to partner in the EU funded CLOSER semiconductor project, joining a consortium of 32 organizations from 8 European countries to advance Europe’s circular economy for microelectronics. ♻️SweGaN’s Anders Lundskog and Ding Yuan Chen participated in last week’s kick-off meeting in Rome, organized by University of Rome Tor Vergata, scientific coordinator of the epitaxial growth SweGaN is proud to partner in the EU funded CLOSER semiconductor project, joining a consortium of 32 organizations from 8 European countries to advance Europe’s circular economy for microelectronics. ♻️SweGaN’s Anders Lundskog and Ding Yuan Chen participated in last week’s kick-off meeting in Rome, organized by University of Rome Tor Vergata, scientific coordinator of the epitaxial solutions SweGaN is proud to partner in the EU funded CLOSER semiconductor project, joining a consortium of 32 organizations from 8 European countries to advance Europe’s circular economy for microelectronics. ♻️SweGaN’s Anders Lundskog and Ding Yuan Chen participated in last week’s kick-off meeting in Rome, organized by University of Rome Tor Vergata, scientific coordinator of the Transmorphic HeteroepitaxySweGaN is proud to partner in the EU funded CLOSER semiconductor project, joining a consortium of 32 organizations from 8 European countries to advance Europe’s circular economy for microelectronics. ♻️SweGaN’s Anders Lundskog and Ding Yuan Chen participated in last week’s kick-off meeting in Rome, organized by University of Rome Tor Vergata, scientific coordinator of the GaN-on-SiC epitaxial solutionsSweGaN joins EU funded CLOSER semiconductor project- consortium of 32 organizations from 8 European countries to advance Europe’s circular economy for microelectronics. - [Wrapping up 2024 – yielding significant momentum and a host of milestones](https://swegan.se/wrapping-up-2024-yielding-significant-momentum-and-a-host-of-milestones/) - 2024 highlights SweGaN people: Further expanding our highly diverse team of 10 nationalities, SweGaN grew by an exciting 35% in 2024. We introduced numerous new colleagues and positions and enhanced our executive management team with CFO Stefan Axelsson. New tagline! Power in the Layers marks our identity and vision as a GaN material manufacturer aiming GaN HEMT epitaxial solution 2024 highlights SweGaN people: Further expanding our highly diverse team of 10 nationalities, SweGaN grew by an exciting 35% in 2024. We introduced numerous new colleagues and positions and enhanced our executive management team with CFO Stefan Axelsson. New tagline! Power in the Layers marks our identity and vision as a GaN material manufacturer aiming QuanFINE® epitaxial solutions 2024 highlights SweGaN people: Further expanding our highly diverse team of 10 nationalities, SweGaN grew by an exciting 35% in 2024. We introduced numerous new colleagues and positions and enhanced our executive management team with CFO Stefan Axelsson. New tagline! Power in the Layers marks our identity and vision as a GaN material manufacturer aiming GaN epitaxial solutions 2024 highlights SweGaN people: Further expanding our highly diverse team of 10 nationalities, SweGaN grew by an exciting 35% in 2024. We introduced numerous new colleagues and positions and enhanced our executive management team with CFO Stefan Axelsson. New tagline! Power in the Layers marks our identity and vision as a GaN material manufacturer aiming wide-bandgap semiconductors 2024 highlights SweGaN people: Further expanding our highly diverse team of 10 nationalities, SweGaN grew by an exciting 35% in 2024. We introduced numerous new colleagues and positions and enhanced our executive management team with CFO Stefan Axelsson. New tagline! Power in the Layers marks our identity and vision as a GaN material manufacturer aiming epitaxial growth 2024 highlights SweGaN people: Further expanding our highly diverse team of 10 nationalities, SweGaN grew by an exciting 35% in 2024. We introduced numerous new colleagues and positions and enhanced our executive management team with CFO Stefan Axelsson. New tagline! Power in the Layers marks our identity and vision as a GaN material manufacturer aiming epitaxial solutions 2024 highlights SweGaN people: Further expanding our highly diverse team of 10 nationalities, SweGaN grew by an exciting 35% in 2024. We introduced numerous new colleagues and positions and enhanced our executive management team with CFO Stefan Axelsson. New tagline! Power in the Layers marks our identity and vision as a GaN material manufacturer aiming Transmorphic Heteroepitaxy2024 highlights SweGaN people: Further expanding our highly diverse team of 10 nationalities, SweGaN grew by an exciting 35% in 2024. We introduced numerous new colleagues and positions and enhanced our executive management team with CFO Stefan Axelsson. New tagline! Power in the Layers marks our identity and vision as a GaN material manufacturer aiming GaN-on-SiC epitaxial solutionsSweGaN has displayed exciting operational transformation in alignment with its growth strategy and transition from a pure R&D company to a rigorous global semiconductor manufacturer. - [SweGaN presents enhanced power performance of RF GaN using a new QuanFINE® architecture at ICNS-15 Conference](https://swegan.se/swegan-presents-enhanced-power-performance-of-rf-gan-using-a-new-quanfine-architecture-at-icns-15-conference/) - SweGaN features at ICNS-15, Malmö, Sweden, encompassing a host of activities! At a special industry session on Innovation, R&D Manager Anders Lundskog will present new performance findings on SweGaN’s patented QuanFINE® GaN HEMT epitaxial solutions with AIGaN Back Barrier at the 15th Int’l Conference on Nitride Semiconductors (ICNS-15). Additionally, SweGaN’s David Dai will present a GaN HEMT epitaxial solution SweGaN features at ICNS-15, Malmö, Sweden, encompassing a host of activities! At a special industry session on Innovation, R&D Manager Anders Lundskog will present new performance findings on SweGaN’s patented QuanFINE® GaN HEMT epitaxial solutions with AIGaN Back Barrier at the 15th Int’l Conference on Nitride Semiconductors (ICNS-15). Additionally, SweGaN’s David Dai will present a QuanFINE® epitaxial solutions SweGaN features at ICNS-15, Malmö, Sweden, encompassing a host of activities! At a special industry session on Innovation, R&D Manager Anders Lundskog will present new performance findings on SweGaN’s patented QuanFINE® GaN HEMT epitaxial solutions with AIGaN Back Barrier at the 15th Int’l Conference on Nitride Semiconductors (ICNS-15). Additionally, SweGaN’s David Dai will present a GaN epitaxial solutions SweGaN features at ICNS-15, Malmö, Sweden, encompassing a host of activities! At a special industry session on Innovation, R&D Manager Anders Lundskog will present new performance findings on SweGaN’s patented QuanFINE® GaN HEMT epitaxial solutions with AIGaN Back Barrier at the 15th Int’l Conference on Nitride Semiconductors (ICNS-15). Additionally, SweGaN’s David Dai will present a wide-bandgap semiconductors SweGaN features at ICNS-15, Malmö, Sweden, encompassing a host of activities! At a special industry session on Innovation, R&D Manager Anders Lundskog will present new performance findings on SweGaN’s patented QuanFINE® GaN HEMT epitaxial solutions with AIGaN Back Barrier at the 15th Int’l Conference on Nitride Semiconductors (ICNS-15). Additionally, SweGaN’s David Dai will present a epitaxial growth SweGaN features at ICNS-15, Malmö, Sweden, encompassing a host of activities! At a special industry session on Innovation, R&D Manager Anders Lundskog will present new performance findings on SweGaN’s patented QuanFINE® GaN HEMT epitaxial solutions with AIGaN Back Barrier at the 15th Int’l Conference on Nitride Semiconductors (ICNS-15). Additionally, SweGaN’s David Dai will present a epitaxial solutions SweGaN features at ICNS-15, Malmö, Sweden, encompassing a host of activities! At a special industry session on Innovation, R&D Manager Anders Lundskog will present new performance findings on SweGaN’s patented QuanFINE® GaN HEMT epitaxial solutions with AIGaN Back Barrier at the 15th Int’l Conference on Nitride Semiconductors (ICNS-15). Additionally, SweGaN’s David Dai will present a Transmorphic HeteroepitaxySweGaN features at ICNS-15, Malmö, Sweden, encompassing a host of activities! At a special industry session on Innovation, R&D Manager Anders Lundskog will present new performance findings on SweGaN’s patented QuanFINE® GaN HEMT epitaxial solutions with AIGaN Back Barrier at the 15th Int’l Conference on Nitride Semiconductors (ICNS-15). Additionally, SweGaN’s David Dai will present a GaN-on-SiC epitaxial solutionsAnders Lundskog will present findings on SweGaN's GaN HEMT epitaxial solutions - David Dai will present a poster on development of reclaiming process at ICNS-15 Conference. - [Special IMA event hosting Taipei Mission in Sweden](https://swegan.se/special-ima-event-hosting-taipei-mission-in-sweden/) - SweGaN was delighted to participate in a special event yesterday and truly honored to host distinguished guests 🌟 🎉 : Special guests from the Taipei Mission in Sweden including Ambassador Mr. Klement Gu, Mr. Robin Lu, Director of Education Division, Mr. Chris Chao, Dir. Of Economic Division, and Mr. Jack Huang, Secretary, Regional Political Affairs GaN HEMT epitaxial solution SweGaN was delighted to participate in a special event yesterday and truly honored to host distinguished guests 🌟 🎉 : Special guests from the Taipei Mission in Sweden including Ambassador Mr. Klement Gu, Mr. Robin Lu, Director of Education Division, Mr. Chris Chao, Dir. Of Economic Division, and Mr. Jack Huang, Secretary, Regional Political Affairs QuanFINE® epitaxial solutions SweGaN was delighted to participate in a special event yesterday and truly honored to host distinguished guests 🌟 🎉 : Special guests from the Taipei Mission in Sweden including Ambassador Mr. Klement Gu, Mr. Robin Lu, Director of Education Division, Mr. Chris Chao, Dir. Of Economic Division, and Mr. Jack Huang, Secretary, Regional Political Affairs GaN epitaxial solutions SweGaN was delighted to participate in a special event yesterday and truly honored to host distinguished guests 🌟 🎉 : Special guests from the Taipei Mission in Sweden including Ambassador Mr. Klement Gu, Mr. Robin Lu, Director of Education Division, Mr. Chris Chao, Dir. Of Economic Division, and Mr. Jack Huang, Secretary, Regional Political Affairs wide-bandgap semiconductors SweGaN was delighted to participate in a special event yesterday and truly honored to host distinguished guests 🌟 🎉 : Special guests from the Taipei Mission in Sweden including Ambassador Mr. Klement Gu, Mr. Robin Lu, Director of Education Division, Mr. Chris Chao, Dir. Of Economic Division, and Mr. Jack Huang, Secretary, Regional Political Affairs epitaxial growth SweGaN was delighted to participate in a special event yesterday and truly honored to host distinguished guests 🌟 🎉 : Special guests from the Taipei Mission in Sweden including Ambassador Mr. Klement Gu, Mr. Robin Lu, Director of Education Division, Mr. Chris Chao, Dir. Of Economic Division, and Mr. Jack Huang, Secretary, Regional Political Affairs epitaxial solutions SweGaN was delighted to participate in a special event yesterday and truly honored to host distinguished guests 🌟 🎉 : Special guests from the Taipei Mission in Sweden including Ambassador Mr. Klement Gu, Mr. Robin Lu, Director of Education Division, Mr. Chris Chao, Dir. Of Economic Division, and Mr. Jack Huang, Secretary, Regional Political Affairs Transmorphic HeteroepitaxySweGaN was delighted to participate in a special event yesterday and truly honored to host distinguished guests 🌟 🎉 : Special guests from the Taipei Mission in Sweden including Ambassador Mr. Klement Gu, Mr. Robin Lu, Director of Education Division, Mr. Chris Chao, Dir. Of Economic Division, and Mr. Jack Huang, Secretary, Regional Political Affairs GaN-on-SiC epitaxial solutionsSweGaN CEO/founder had honor of sharing his semiconductor journey and inviting the special guests to visit SweGaN HQ. - [Recapping 2023 - SweGaN on an exciting growth journey](https://swegan.se/recapping-2023-swegan-on-an-exciting-growth-journey/) - Recapping 2023 – SweGaN on an exciting growth journeyAs 2023 comes to an end and we look towards 2024, our ambitions are big and I’m proud to say that we’ve continue to gain momentum with a host of achievements. I would like to thank our customers, research and technology partners, investors, friends in the market, GaN HEMT epitaxial solution Recapping 2023 – SweGaN on an exciting growth journeyAs 2023 comes to an end and we look towards 2024, our ambitions are big and I’m proud to say that we’ve continue to gain momentum with a host of achievements. I would like to thank our customers, research and technology partners, investors, friends in the market, QuanFINE® epitaxial solutions Recapping 2023 – SweGaN on an exciting growth journeyAs 2023 comes to an end and we look towards 2024, our ambitions are big and I’m proud to say that we’ve continue to gain momentum with a host of achievements. I would like to thank our customers, research and technology partners, investors, friends in the market, GaN epitaxial solutions Recapping 2023 – SweGaN on an exciting growth journeyAs 2023 comes to an end and we look towards 2024, our ambitions are big and I’m proud to say that we’ve continue to gain momentum with a host of achievements. I would like to thank our customers, research and technology partners, investors, friends in the market, wide-bandgap semiconductors Recapping 2023 – SweGaN on an exciting growth journeyAs 2023 comes to an end and we look towards 2024, our ambitions are big and I’m proud to say that we’ve continue to gain momentum with a host of achievements. I would like to thank our customers, research and technology partners, investors, friends in the market, epitaxial growth Recapping 2023 – SweGaN on an exciting growth journeyAs 2023 comes to an end and we look towards 2024, our ambitions are big and I’m proud to say that we’ve continue to gain momentum with a host of achievements. I would like to thank our customers, research and technology partners, investors, friends in the market, epitaxial solutions Recapping 2023 – SweGaN on an exciting growth journeyAs 2023 comes to an end and we look towards 2024, our ambitions are big and I’m proud to say that we’ve continue to gain momentum with a host of achievements. I would like to thank our customers, research and technology partners, investors, friends in the market, Transmorphic HeteroepitaxyRecapping 2023 – SweGaN on an exciting growth journeyAs 2023 comes to an end and we look towards 2024, our ambitions are big and I’m proud to say that we’ve continue to gain momentum with a host of achievements. I would like to thank our customers, research and technology partners, investors, friends in the market, GaN-on-SiC epitaxial solutionsSweGaN CEO: Our ambitions are big and we’ve continued to gain momentum with a host of achievements - [From the CEO: Recapping an exciting 2022 at SweGaN](https://swegan.se/recapping-2022-an-exciting-year-at-swegan/) - Recapping an exciting 2022 at SweGaNAs the year comes to a close, we would like to take the opportunity to thank our customers, research partners, investors, and friends in the market for a great year. We couldn’t make it happen without you.Joint research & new qualification processesSweGaN kicked off 2022 with a number of exciting GaN HEMT epitaxial solution Recapping an exciting 2022 at SweGaNAs the year comes to a close, we would like to take the opportunity to thank our customers, research partners, investors, and friends in the market for a great year. We couldn’t make it happen without you.Joint research & new qualification processesSweGaN kicked off 2022 with a number of exciting QuanFINE® epitaxial solutions Recapping an exciting 2022 at SweGaNAs the year comes to a close, we would like to take the opportunity to thank our customers, research partners, investors, and friends in the market for a great year. We couldn’t make it happen without you.Joint research & new qualification processesSweGaN kicked off 2022 with a number of exciting GaN epitaxial solutions Recapping an exciting 2022 at SweGaNAs the year comes to a close, we would like to take the opportunity to thank our customers, research partners, investors, and friends in the market for a great year. We couldn’t make it happen without you.Joint research & new qualification processesSweGaN kicked off 2022 with a number of exciting wide-bandgap semiconductors Recapping an exciting 2022 at SweGaNAs the year comes to a close, we would like to take the opportunity to thank our customers, research partners, investors, and friends in the market for a great year. We couldn’t make it happen without you.Joint research & new qualification processesSweGaN kicked off 2022 with a number of exciting epitaxial growth Recapping an exciting 2022 at SweGaNAs the year comes to a close, we would like to take the opportunity to thank our customers, research partners, investors, and friends in the market for a great year. We couldn’t make it happen without you.Joint research & new qualification processesSweGaN kicked off 2022 with a number of exciting epitaxial solutions Recapping an exciting 2022 at SweGaNAs the year comes to a close, we would like to take the opportunity to thank our customers, research partners, investors, and friends in the market for a great year. We couldn’t make it happen without you.Joint research & new qualification processesSweGaN kicked off 2022 with a number of exciting Transmorphic HeteroepitaxyRecapping an exciting 2022 at SweGaNAs the year comes to a close, we would like to take the opportunity to thank our customers, research partners, investors, and friends in the market for a great year. We couldn’t make it happen without you.Joint research & new qualification processesSweGaN kicked off 2022 with a number of exciting GaN-on-SiC epitaxial solutionsJoint research & new qualification processes, plus major Series A Investment Round backing major growth plans. - [European Microwave Week 2025](https://swegan.se/european-microwave-week-2025/) - SweGaN was pleased to attend EuMW2025 in Utrecht, the Netherlands. We were glad to meet with long-time friends, partners, and industry experts. - [National Roundtable on Semiconductor Strategy](https://swegan.se/swegan-joins-national-roundtable-on-swedens-semiconductor-strategy/) - SweGaN joins a roundtable discussion on Building Sweden's National Semiconductor Strategy on 10th October. - [SweGaN team at ICNS15 in Malmö, Sweden](https://swegan.se/meet-the-swegan-team-at-icns15/) - Meet the SweGaN team at #ICNS15 (International Conference on Nitride Semiconductors), Malmö, Sweden: July 6th – 11th at Stand 11, Clarion Hotel & Congress Malmö. “This is the 1st major nitride conference taking place in Sweden. We are excited to meet our partners, customers and friends in the field at our home base,” says Jr-Tai GaN HEMT epitaxial solution Meet the SweGaN team at #ICNS15 (International Conference on Nitride Semiconductors), Malmö, Sweden: July 6th – 11th at Stand 11, Clarion Hotel & Congress Malmö. “This is the 1st major nitride conference taking place in Sweden. We are excited to meet our partners, customers and friends in the field at our home base,” says Jr-Tai QuanFINE® epitaxial solutions Meet the SweGaN team at #ICNS15 (International Conference on Nitride Semiconductors), Malmö, Sweden: July 6th – 11th at Stand 11, Clarion Hotel & Congress Malmö. “This is the 1st major nitride conference taking place in Sweden. We are excited to meet our partners, customers and friends in the field at our home base,” says Jr-Tai GaN epitaxial solutions Meet the SweGaN team at #ICNS15 (International Conference on Nitride Semiconductors), Malmö, Sweden: July 6th – 11th at Stand 11, Clarion Hotel & Congress Malmö. “This is the 1st major nitride conference taking place in Sweden. We are excited to meet our partners, customers and friends in the field at our home base,” says Jr-Tai wide-bandgap semiconductors Meet the SweGaN team at #ICNS15 (International Conference on Nitride Semiconductors), Malmö, Sweden: July 6th – 11th at Stand 11, Clarion Hotel & Congress Malmö. “This is the 1st major nitride conference taking place in Sweden. We are excited to meet our partners, customers and friends in the field at our home base,” says Jr-Tai epitaxial growth Meet the SweGaN team at #ICNS15 (International Conference on Nitride Semiconductors), Malmö, Sweden: July 6th – 11th at Stand 11, Clarion Hotel & Congress Malmö. “This is the 1st major nitride conference taking place in Sweden. We are excited to meet our partners, customers and friends in the field at our home base,” says Jr-Tai epitaxial solutions Meet the SweGaN team at #ICNS15 (International Conference on Nitride Semiconductors), Malmö, Sweden: July 6th – 11th at Stand 11, Clarion Hotel & Congress Malmö. “This is the 1st major nitride conference taking place in Sweden. We are excited to meet our partners, customers and friends in the field at our home base,” says Jr-Tai Transmorphic HeteroepitaxyMeet the SweGaN team at #ICNS15 (International Conference on Nitride Semiconductors), Malmö, Sweden: July 6th – 11th at Stand 11, Clarion Hotel & Congress Malmö. “This is the 1st major nitride conference taking place in Sweden. We are excited to meet our partners, customers and friends in the field at our home base,” says Jr-Tai GaN-on-SiC epitaxial solutionsAt the ICNS 15 Exhibition, the SweGaN team will present the company and introduce its tailor-made engineered epitaxial solutions for RF and power devices. - [Webinar: Nordic Chip Collaboration](https://swegan.se/business-sweden-webinar-power-electronics-in-semiconductors/) - SweGaN participated in a cross-Nordic webinar spotlighting the pivotal role of power electronics in driving sustainable, electrified systems across industries. - [LARM Career Fair](https://swegan.se/larm-career-fair/) - Team SweGaN is gearing up to meet students at next week’s Larm Career Fair and expo at Linköping University!Stop by our stand: We’ll have HR and engineering professionals onsite to share their insights on material engineering as an interesting career and what it is like to be a part of a growing company in the GaN HEMT epitaxial solution Team SweGaN is gearing up to meet students at next week’s Larm Career Fair and expo at Linköping University!Stop by our stand: We’ll have HR and engineering professionals onsite to share their insights on material engineering as an interesting career and what it is like to be a part of a growing company in the QuanFINE® epitaxial solutions Team SweGaN is gearing up to meet students at next week’s Larm Career Fair and expo at Linköping University!Stop by our stand: We’ll have HR and engineering professionals onsite to share their insights on material engineering as an interesting career and what it is like to be a part of a growing company in the GaN epitaxial solutions Team SweGaN is gearing up to meet students at next week’s Larm Career Fair and expo at Linköping University!Stop by our stand: We’ll have HR and engineering professionals onsite to share their insights on material engineering as an interesting career and what it is like to be a part of a growing company in the wide-bandgap semiconductors Team SweGaN is gearing up to meet students at next week’s Larm Career Fair and expo at Linköping University!Stop by our stand: We’ll have HR and engineering professionals onsite to share their insights on material engineering as an interesting career and what it is like to be a part of a growing company in the epitaxial growth Team SweGaN is gearing up to meet students at next week’s Larm Career Fair and expo at Linköping University!Stop by our stand: We’ll have HR and engineering professionals onsite to share their insights on material engineering as an interesting career and what it is like to be a part of a growing company in the epitaxial solutions Team SweGaN is gearing up to meet students at next week’s Larm Career Fair and expo at Linköping University!Stop by our stand: We’ll have HR and engineering professionals onsite to share their insights on material engineering as an interesting career and what it is like to be a part of a growing company in the Transmorphic HeteroepitaxyTeam SweGaN is gearing up to meet students at next week’s Larm Career Fair and expo at Linköping University!Stop by our stand: We’ll have HR and engineering professionals onsite to share their insights on material engineering as an interesting career and what it is like to be a part of a growing company in the GaN-on-SiC epitaxial solutionsTeam SweGaN is gearing up to meet students at next week’s Larm Career Fair and expo at Linköping University! - [CS Mantech](https://swegan.se/meet-swegan-at-cs-mantech/) - Meet SweGaN’s R&D Manager Anders Lundskog this week at CS MANTECH conference (Int’l Conference on Compound Semiconductor Manufacturing Technology): 🎯Dates: May 19-22🎯Place: Hilton New Orleans Riverside in New Orleans GaN HEMT epitaxial solution Meet SweGaN’s R&D Manager Anders Lundskog this week at CS MANTECH conference (Int’l Conference on Compound Semiconductor Manufacturing Technology): 🎯Dates: May 19-22🎯Place: Hilton New Orleans Riverside in New Orleans QuanFINE® epitaxial solutions Meet SweGaN’s R&D Manager Anders Lundskog this week at CS MANTECH conference (Int’l Conference on Compound Semiconductor Manufacturing Technology): 🎯Dates: May 19-22🎯Place: Hilton New Orleans Riverside in New Orleans GaN epitaxial solutions Meet SweGaN’s R&D Manager Anders Lundskog this week at CS MANTECH conference (Int’l Conference on Compound Semiconductor Manufacturing Technology): 🎯Dates: May 19-22🎯Place: Hilton New Orleans Riverside in New Orleans wide-bandgap semiconductors Meet SweGaN’s R&D Manager Anders Lundskog this week at CS MANTECH conference (Int’l Conference on Compound Semiconductor Manufacturing Technology): 🎯Dates: May 19-22🎯Place: Hilton New Orleans Riverside in New Orleans epitaxial growth Meet SweGaN’s R&D Manager Anders Lundskog this week at CS MANTECH conference (Int’l Conference on Compound Semiconductor Manufacturing Technology): 🎯Dates: May 19-22🎯Place: Hilton New Orleans Riverside in New Orleans epitaxial solutions Meet SweGaN’s R&D Manager Anders Lundskog this week at CS MANTECH conference (Int’l Conference on Compound Semiconductor Manufacturing Technology): 🎯Dates: May 19-22🎯Place: Hilton New Orleans Riverside in New Orleans Transmorphic HeteroepitaxyMeet SweGaN’s R&D Manager Anders Lundskog this week at CS MANTECH conference (Int’l Conference on Compound Semiconductor Manufacturing Technology): 🎯Dates: May 19-22🎯Place: Hilton New Orleans Riverside in New Orleans GaN-on-SiC epitaxial solutionsMeet SweGaN’s R&D Manager Anders Lundskog in New Orleans - [IMS’ Microwave week](https://swegan.se/meet-swegan-at-ims-microwave-week/) - Meet SweGaN at IMS’ Microwave week as we join like-minded visionaries, innovators, and industry leaders to discuss and learn about the latest innovative and disruptive technologies at IEEE MTT-S International Microwave Symposium (IMS). 🎯 📅 Dates: June 15-20, 2025🌎 Place: Moscone Center, San Francisco To pre-book a meet-up, reach out to jan.engstrom@swegan.se. www.ims-ieee.org GaN HEMT epitaxial solution Meet SweGaN at IMS’ Microwave week as we join like-minded visionaries, innovators, and industry leaders to discuss and learn about the latest innovative and disruptive technologies at IEEE MTT-S International Microwave Symposium (IMS). 🎯 📅 Dates: June 15-20, 2025🌎 Place: Moscone Center, San Francisco To pre-book a meet-up, reach out to jan.engstrom@swegan.se. www.ims-ieee.org QuanFINE® epitaxial solutions Meet SweGaN at IMS’ Microwave week as we join like-minded visionaries, innovators, and industry leaders to discuss and learn about the latest innovative and disruptive technologies at IEEE MTT-S International Microwave Symposium (IMS). 🎯 📅 Dates: June 15-20, 2025🌎 Place: Moscone Center, San Francisco To pre-book a meet-up, reach out to jan.engstrom@swegan.se. www.ims-ieee.org GaN epitaxial solutions Meet SweGaN at IMS’ Microwave week as we join like-minded visionaries, innovators, and industry leaders to discuss and learn about the latest innovative and disruptive technologies at IEEE MTT-S International Microwave Symposium (IMS). 🎯 📅 Dates: June 15-20, 2025🌎 Place: Moscone Center, San Francisco To pre-book a meet-up, reach out to jan.engstrom@swegan.se. www.ims-ieee.org wide-bandgap semiconductors Meet SweGaN at IMS’ Microwave week as we join like-minded visionaries, innovators, and industry leaders to discuss and learn about the latest innovative and disruptive technologies at IEEE MTT-S International Microwave Symposium (IMS). 🎯 📅 Dates: June 15-20, 2025🌎 Place: Moscone Center, San Francisco To pre-book a meet-up, reach out to jan.engstrom@swegan.se. www.ims-ieee.org epitaxial growth Meet SweGaN at IMS’ Microwave week as we join like-minded visionaries, innovators, and industry leaders to discuss and learn about the latest innovative and disruptive technologies at IEEE MTT-S International Microwave Symposium (IMS). 🎯 📅 Dates: June 15-20, 2025🌎 Place: Moscone Center, San Francisco To pre-book a meet-up, reach out to jan.engstrom@swegan.se. www.ims-ieee.org epitaxial solutions Meet SweGaN at IMS’ Microwave week as we join like-minded visionaries, innovators, and industry leaders to discuss and learn about the latest innovative and disruptive technologies at IEEE MTT-S International Microwave Symposium (IMS). 🎯 📅 Dates: June 15-20, 2025🌎 Place: Moscone Center, San Francisco To pre-book a meet-up, reach out to jan.engstrom@swegan.se. www.ims-ieee.org Transmorphic HeteroepitaxyMeet SweGaN at IMS’ Microwave week as we join like-minded visionaries, innovators, and industry leaders to discuss and learn about the latest innovative and disruptive technologies at IEEE MTT-S International Microwave Symposium (IMS). 🎯 📅 Dates: June 15-20, 2025🌎 Place: Moscone Center, San Francisco To pre-book a meet-up, reach out to jan.engstrom@swegan.se. www.ims-ieee.org GaN-on-SiC epitaxial solutionsMeet SweGaN in San Francisco, June 15-20, to discuss the latest innovative and disruptive technologies. - [SweGaN introduces new tagline](https://swegan.se/swegan-introduces-new-tagline/) - SweGaN Unveils New Tagline May 14th, 2024: Reflecting SweGaN’s ongoing expansion, SweGaN is undergoing a transformation. Following the introduction of our new logo in October 2023, we are thrilled to announce a new tagline which marks our identity and our vision as a GaN material manufacturer. Power in the Layers Central to the creation of GaN HEMT epitaxial solution SweGaN Unveils New Tagline May 14th, 2024: Reflecting SweGaN’s ongoing expansion, SweGaN is undergoing a transformation. Following the introduction of our new logo in October 2023, we are thrilled to announce a new tagline which marks our identity and our vision as a GaN material manufacturer. Power in the Layers Central to the creation of QuanFINE® epitaxial solutions SweGaN Unveils New Tagline May 14th, 2024: Reflecting SweGaN’s ongoing expansion, SweGaN is undergoing a transformation. Following the introduction of our new logo in October 2023, we are thrilled to announce a new tagline which marks our identity and our vision as a GaN material manufacturer. Power in the Layers Central to the creation of GaN epitaxial solutions SweGaN Unveils New Tagline May 14th, 2024: Reflecting SweGaN’s ongoing expansion, SweGaN is undergoing a transformation. Following the introduction of our new logo in October 2023, we are thrilled to announce a new tagline which marks our identity and our vision as a GaN material manufacturer. Power in the Layers Central to the creation of wide-bandgap semiconductors SweGaN Unveils New Tagline May 14th, 2024: Reflecting SweGaN’s ongoing expansion, SweGaN is undergoing a transformation. Following the introduction of our new logo in October 2023, we are thrilled to announce a new tagline which marks our identity and our vision as a GaN material manufacturer. Power in the Layers Central to the creation of epitaxial growth SweGaN Unveils New Tagline May 14th, 2024: Reflecting SweGaN’s ongoing expansion, SweGaN is undergoing a transformation. Following the introduction of our new logo in October 2023, we are thrilled to announce a new tagline which marks our identity and our vision as a GaN material manufacturer. Power in the Layers Central to the creation of epitaxial solutions SweGaN Unveils New Tagline May 14th, 2024: Reflecting SweGaN’s ongoing expansion, SweGaN is undergoing a transformation. Following the introduction of our new logo in October 2023, we are thrilled to announce a new tagline which marks our identity and our vision as a GaN material manufacturer. Power in the Layers Central to the creation of Transmorphic HeteroepitaxySweGaN Unveils New Tagline May 14th, 2024: Reflecting SweGaN’s ongoing expansion, SweGaN is undergoing a transformation. Following the introduction of our new logo in October 2023, we are thrilled to announce a new tagline which marks our identity and our vision as a GaN material manufacturer. Power in the Layers Central to the creation of GaN-on-SiC epitaxial solutionsSweGaN is thrilled to announce a new tagline which marks our identity and our vision as a GaN material manufacturer. - [SweGaN secures multiple agreements](https://swegan.se/swegan-secures-multiple-agreements/) - SweGaN secures multiple major frame agreements for QuanFINE® GaN-on-SiC epitaxial wafers – reports 100% YoY order increase in 1H and new high-capacity facility in operation Linköping, Sweden, August 13th, 2024: SweGaN AB, a European semiconductor manufacturer that develops and produces custom engineered Gallium Nitride on Silicon Carbide (GaN-on-SiC) epitaxial wafers, reports orders for its benchmark QuanFINE® epiwafers GaN HEMT epitaxial solution SweGaN secures multiple major frame agreements for QuanFINE® GaN-on-SiC epitaxial wafers – reports 100% YoY order increase in 1H and new high-capacity facility in operation Linköping, Sweden, August 13th, 2024: SweGaN AB, a European semiconductor manufacturer that develops and produces custom engineered Gallium Nitride on Silicon Carbide (GaN-on-SiC) epitaxial wafers, reports orders for its benchmark QuanFINE® epiwafers QuanFINE® epitaxial solutions SweGaN secures multiple major frame agreements for QuanFINE® GaN-on-SiC epitaxial wafers – reports 100% YoY order increase in 1H and new high-capacity facility in operation Linköping, Sweden, August 13th, 2024: SweGaN AB, a European semiconductor manufacturer that develops and produces custom engineered Gallium Nitride on Silicon Carbide (GaN-on-SiC) epitaxial wafers, reports orders for its benchmark QuanFINE® epiwafers GaN epitaxial solutions SweGaN secures multiple major frame agreements for QuanFINE® GaN-on-SiC epitaxial wafers – reports 100% YoY order increase in 1H and new high-capacity facility in operation Linköping, Sweden, August 13th, 2024: SweGaN AB, a European semiconductor manufacturer that develops and produces custom engineered Gallium Nitride on Silicon Carbide (GaN-on-SiC) epitaxial wafers, reports orders for its benchmark QuanFINE® epiwafers wide-bandgap semiconductors SweGaN secures multiple major frame agreements for QuanFINE® GaN-on-SiC epitaxial wafers – reports 100% YoY order increase in 1H and new high-capacity facility in operation Linköping, Sweden, August 13th, 2024: SweGaN AB, a European semiconductor manufacturer that develops and produces custom engineered Gallium Nitride on Silicon Carbide (GaN-on-SiC) epitaxial wafers, reports orders for its benchmark QuanFINE® epiwafers epitaxial growth SweGaN secures multiple major frame agreements for QuanFINE® GaN-on-SiC epitaxial wafers – reports 100% YoY order increase in 1H and new high-capacity facility in operation Linköping, Sweden, August 13th, 2024: SweGaN AB, a European semiconductor manufacturer that develops and produces custom engineered Gallium Nitride on Silicon Carbide (GaN-on-SiC) epitaxial wafers, reports orders for its benchmark QuanFINE® epiwafers epitaxial solutions SweGaN secures multiple major frame agreements for QuanFINE® GaN-on-SiC epitaxial wafers – reports 100% YoY order increase in 1H and new high-capacity facility in operation Linköping, Sweden, August 13th, 2024: SweGaN AB, a European semiconductor manufacturer that develops and produces custom engineered Gallium Nitride on Silicon Carbide (GaN-on-SiC) epitaxial wafers, reports orders for its benchmark QuanFINE® epiwafers Transmorphic HeteroepitaxySweGaN secures multiple major frame agreements for QuanFINE® GaN-on-SiC epitaxial wafers – reports 100% YoY order increase in 1H and new high-capacity facility in operation Linköping, Sweden, August 13th, 2024: SweGaN AB, a European semiconductor manufacturer that develops and produces custom engineered Gallium Nitride on Silicon Carbide (GaN-on-SiC) epitaxial wafers, reports orders for its benchmark QuanFINE® epiwafers GaN-on-SiC epitaxial solutionsSweGaN secures major frame agreements – reports 100% 1H YoY order increase & new high-capacity facility in operation. - [SweGaN announces RFHIC strategic equity investment](https://swegan.se/european-semiconductor-manufacturer-swegan-announces-rfhic-strategic-equity-investment-and-joint-product-development/) - European semiconductor manufacturer SweGaN announces RFHIC strategic equity investment and joint product development Linköping, Sweden, April 15, 2024: SweGaN AB, a European semiconductor manufacturer that develops and produces engineered high-performance Gallium Nitride on Silicon Carbide (GaN-on-SiC) epitaxial wafers, announces it has entered strategic partnership with South Korea based RFHIC Corporation (KOSDAQ:218410). RFHIC is a global leader in designing and GaN HEMT epitaxial solution European semiconductor manufacturer SweGaN announces RFHIC strategic equity investment and joint product development Linköping, Sweden, April 15, 2024: SweGaN AB, a European semiconductor manufacturer that develops and produces engineered high-performance Gallium Nitride on Silicon Carbide (GaN-on-SiC) epitaxial wafers, announces it has entered strategic partnership with South Korea based RFHIC Corporation (KOSDAQ:218410). RFHIC is a global leader in designing and QuanFINE® epitaxial solutions European semiconductor manufacturer SweGaN announces RFHIC strategic equity investment and joint product development Linköping, Sweden, April 15, 2024: SweGaN AB, a European semiconductor manufacturer that develops and produces engineered high-performance Gallium Nitride on Silicon Carbide (GaN-on-SiC) epitaxial wafers, announces it has entered strategic partnership with South Korea based RFHIC Corporation (KOSDAQ:218410). RFHIC is a global leader in designing and GaN epitaxial solutions European semiconductor manufacturer SweGaN announces RFHIC strategic equity investment and joint product development Linköping, Sweden, April 15, 2024: SweGaN AB, a European semiconductor manufacturer that develops and produces engineered high-performance Gallium Nitride on Silicon Carbide (GaN-on-SiC) epitaxial wafers, announces it has entered strategic partnership with South Korea based RFHIC Corporation (KOSDAQ:218410). RFHIC is a global leader in designing and wide-bandgap semiconductors European semiconductor manufacturer SweGaN announces RFHIC strategic equity investment and joint product development Linköping, Sweden, April 15, 2024: SweGaN AB, a European semiconductor manufacturer that develops and produces engineered high-performance Gallium Nitride on Silicon Carbide (GaN-on-SiC) epitaxial wafers, announces it has entered strategic partnership with South Korea based RFHIC Corporation (KOSDAQ:218410). RFHIC is a global leader in designing and epitaxial growth European semiconductor manufacturer SweGaN announces RFHIC strategic equity investment and joint product development Linköping, Sweden, April 15, 2024: SweGaN AB, a European semiconductor manufacturer that develops and produces engineered high-performance Gallium Nitride on Silicon Carbide (GaN-on-SiC) epitaxial wafers, announces it has entered strategic partnership with South Korea based RFHIC Corporation (KOSDAQ:218410). RFHIC is a global leader in designing and epitaxial solutions European semiconductor manufacturer SweGaN announces RFHIC strategic equity investment and joint product development Linköping, Sweden, April 15, 2024: SweGaN AB, a European semiconductor manufacturer that develops and produces engineered high-performance Gallium Nitride on Silicon Carbide (GaN-on-SiC) epitaxial wafers, announces it has entered strategic partnership with South Korea based RFHIC Corporation (KOSDAQ:218410). RFHIC is a global leader in designing and Transmorphic HeteroepitaxyEuropean semiconductor manufacturer SweGaN announces RFHIC strategic equity investment and joint product development Linköping, Sweden, April 15, 2024: SweGaN AB, a European semiconductor manufacturer that develops and produces engineered high-performance Gallium Nitride on Silicon Carbide (GaN-on-SiC) epitaxial wafers, announces it has entered strategic partnership with South Korea based RFHIC Corporation (KOSDAQ:218410). RFHIC is a global leader in designing and GaN-on-SiC epitaxial solutionsSweGaN announces RFHIC strategic equity investment and joint product development. - [Executive Interview: Jr-Tai (Ted) Chen, Founder and CEO of SweGaN](https://swegan.se/executive-interview-jr-tai-ted-chen-founder-and-ceo-of-swegan/) - Link to Microwave Journal article – September 16, 20241. You founded SweGaN a decade ago. Can you tell us a bit about your background and the process that led to the founding of SweGaN? What did you and the team see as the unmet need?I moved from Taiwan to Sweden in 2009 to pursue a GaN HEMT epitaxial solution Link to Microwave Journal article – September 16, 20241. You founded SweGaN a decade ago. Can you tell us a bit about your background and the process that led to the founding of SweGaN? What did you and the team see as the unmet need?I moved from Taiwan to Sweden in 2009 to pursue a QuanFINE® epitaxial solutions Link to Microwave Journal article – September 16, 20241. You founded SweGaN a decade ago. Can you tell us a bit about your background and the process that led to the founding of SweGaN? What did you and the team see as the unmet need?I moved from Taiwan to Sweden in 2009 to pursue a GaN epitaxial solutions Link to Microwave Journal article – September 16, 20241. You founded SweGaN a decade ago. Can you tell us a bit about your background and the process that led to the founding of SweGaN? What did you and the team see as the unmet need?I moved from Taiwan to Sweden in 2009 to pursue a wide-bandgap semiconductors Link to Microwave Journal article – September 16, 20241. You founded SweGaN a decade ago. Can you tell us a bit about your background and the process that led to the founding of SweGaN? What did you and the team see as the unmet need?I moved from Taiwan to Sweden in 2009 to pursue a epitaxial growth Link to Microwave Journal article – September 16, 20241. You founded SweGaN a decade ago. Can you tell us a bit about your background and the process that led to the founding of SweGaN? What did you and the team see as the unmet need?I moved from Taiwan to Sweden in 2009 to pursue a epitaxial solutions Link to Microwave Journal article – September 16, 20241. You founded SweGaN a decade ago. Can you tell us a bit about your background and the process that led to the founding of SweGaN? What did you and the team see as the unmet need?I moved from Taiwan to Sweden in 2009 to pursue a Transmorphic HeteroepitaxyLink to Microwave Journal article – September 16, 20241. You founded SweGaN a decade ago. Can you tell us a bit about your background and the process that led to the founding of SweGaN? What did you and the team see as the unmet need?I moved from Taiwan to Sweden in 2009 to pursue a GaN-on-SiC epitaxial solutionsJoin this exclusive Microwave Journal interview with SweGaN CEO, Jr-Tai Chen. - [SweGaN and the CLOSER Project: Pioneering Circularity in Semiconductor Production](https://swegan.se/swegan-and-the-closer-project-pioneering-circularity-in-semiconductor-production/) - Link to article on Power Electronics News: January 14, 2025 Maurizio Di Paolo Emilio In an era increasingly defined by resource scarcity and environmental challenges, innovative approaches to material reuse and recycling are paramount. The I3 CLOSER project, 70% funded by the European Union (EU), represents a bold stride toward this goal (Figure 1). This initiative seeks to GaN HEMT epitaxial solution Link to article on Power Electronics News: January 14, 2025 Maurizio Di Paolo Emilio In an era increasingly defined by resource scarcity and environmental challenges, innovative approaches to material reuse and recycling are paramount. The I3 CLOSER project, 70% funded by the European Union (EU), represents a bold stride toward this goal (Figure 1). This initiative seeks to QuanFINE® epitaxial solutions Link to article on Power Electronics News: January 14, 2025 Maurizio Di Paolo Emilio In an era increasingly defined by resource scarcity and environmental challenges, innovative approaches to material reuse and recycling are paramount. The I3 CLOSER project, 70% funded by the European Union (EU), represents a bold stride toward this goal (Figure 1). This initiative seeks to GaN epitaxial solutions Link to article on Power Electronics News: January 14, 2025 Maurizio Di Paolo Emilio In an era increasingly defined by resource scarcity and environmental challenges, innovative approaches to material reuse and recycling are paramount. The I3 CLOSER project, 70% funded by the European Union (EU), represents a bold stride toward this goal (Figure 1). This initiative seeks to wide-bandgap semiconductors Link to article on Power Electronics News: January 14, 2025 Maurizio Di Paolo Emilio In an era increasingly defined by resource scarcity and environmental challenges, innovative approaches to material reuse and recycling are paramount. The I3 CLOSER project, 70% funded by the European Union (EU), represents a bold stride toward this goal (Figure 1). This initiative seeks to epitaxial growth Link to article on Power Electronics News: January 14, 2025 Maurizio Di Paolo Emilio In an era increasingly defined by resource scarcity and environmental challenges, innovative approaches to material reuse and recycling are paramount. The I3 CLOSER project, 70% funded by the European Union (EU), represents a bold stride toward this goal (Figure 1). This initiative seeks to epitaxial solutions Link to article on Power Electronics News: January 14, 2025 Maurizio Di Paolo Emilio In an era increasingly defined by resource scarcity and environmental challenges, innovative approaches to material reuse and recycling are paramount. The I3 CLOSER project, 70% funded by the European Union (EU), represents a bold stride toward this goal (Figure 1). This initiative seeks to Transmorphic HeteroepitaxyLink to article on Power Electronics News: January 14, 2025 Maurizio Di Paolo Emilio In an era increasingly defined by resource scarcity and environmental challenges, innovative approaches to material reuse and recycling are paramount. The I3 CLOSER project, 70% funded by the European Union (EU), represents a bold stride toward this goal (Figure 1). This initiative seeks to GaN-on-SiC epitaxial solutionsFunded under the European Union’s I3 program, CLOSER unites 32 partners from eight European countries, working collaboratively to develop sustainable semiconductor and microelectronics production processes. - [Sweden’s Navigare Ventures completes SweGaN equity raise of nearly 12M Euro](https://swegan.se/swedens-navigare-ventures-completes-swegan-equity-raise-of-nearly-12m-euro/) - Linköping, Sweden, September 18, 2024: SweGaN AB, an European semiconductor manufacturer that develops and produces customengineered Gallium Nitride on Silicon Carbide (GaN-on-SiC) epitaxial wafers, announces the closing of a substantial equity round from financial and strategic investors. The investment will propel strategic collaborations and boost material development for growing power device markets. In this financing GaN HEMT epitaxial solution Linköping, Sweden, September 18, 2024: SweGaN AB, an European semiconductor manufacturer that develops and produces customengineered Gallium Nitride on Silicon Carbide (GaN-on-SiC) epitaxial wafers, announces the closing of a substantial equity round from financial and strategic investors. The investment will propel strategic collaborations and boost material development for growing power device markets. In this financing QuanFINE® epitaxial solutions Linköping, Sweden, September 18, 2024: SweGaN AB, an European semiconductor manufacturer that develops and produces customengineered Gallium Nitride on Silicon Carbide (GaN-on-SiC) epitaxial wafers, announces the closing of a substantial equity round from financial and strategic investors. The investment will propel strategic collaborations and boost material development for growing power device markets. In this financing GaN epitaxial solutions Linköping, Sweden, September 18, 2024: SweGaN AB, an European semiconductor manufacturer that develops and produces customengineered Gallium Nitride on Silicon Carbide (GaN-on-SiC) epitaxial wafers, announces the closing of a substantial equity round from financial and strategic investors. The investment will propel strategic collaborations and boost material development for growing power device markets. In this financing wide-bandgap semiconductors Linköping, Sweden, September 18, 2024: SweGaN AB, an European semiconductor manufacturer that develops and produces customengineered Gallium Nitride on Silicon Carbide (GaN-on-SiC) epitaxial wafers, announces the closing of a substantial equity round from financial and strategic investors. The investment will propel strategic collaborations and boost material development for growing power device markets. In this financing epitaxial growth Linköping, Sweden, September 18, 2024: SweGaN AB, an European semiconductor manufacturer that develops and produces customengineered Gallium Nitride on Silicon Carbide (GaN-on-SiC) epitaxial wafers, announces the closing of a substantial equity round from financial and strategic investors. The investment will propel strategic collaborations and boost material development for growing power device markets. In this financing epitaxial solutions Linköping, Sweden, September 18, 2024: SweGaN AB, an European semiconductor manufacturer that develops and produces customengineered Gallium Nitride on Silicon Carbide (GaN-on-SiC) epitaxial wafers, announces the closing of a substantial equity round from financial and strategic investors. The investment will propel strategic collaborations and boost material development for growing power device markets. In this financing Transmorphic HeteroepitaxyLinköping, Sweden, September 18, 2024: SweGaN AB, an European semiconductor manufacturer that develops and produces customengineered Gallium Nitride on Silicon Carbide (GaN-on-SiC) epitaxial wafers, announces the closing of a substantial equity round from financial and strategic investors. The investment will propel strategic collaborations and boost material development for growing power device markets. In this financing GaN-on-SiC epitaxial solutionsSweden’s Navigare Ventures completes SweGaN equity raise of nearly 12M Euro – gains significant stake in European semiconductor company - [Swedish GaN-on-SiC wafer specialist SweGaN reports robust 2019 YoY growth](https://swegan.se/swedish-gan-on-sic-wafer-specialist-swegan-reports-robust-2019-yoy-growth/) - SweGaN AB, a manufacturer of custom-made GaN-on-SiC epitaxial wafers based on a unique epitaxial growth technology for RF and power components and devices, today announced strong results for 2019 with 300% year-on-year growth from 2018. – “2019 was an outstanding year for SweGaN with a doubling of commercial orders and collaboration in multiple prestigious GaN HEMT epitaxial solution SweGaN AB, a manufacturer of custom-made GaN-on-SiC epitaxial wafers based on a unique epitaxial growth technology for RF and power components and devices, today announced strong results for 2019 with 300% year-on-year growth from 2018. – “2019 was an outstanding year for SweGaN with a doubling of commercial orders and collaboration in multiple prestigious QuanFINE® epitaxial solutions SweGaN AB, a manufacturer of custom-made GaN-on-SiC epitaxial wafers based on a unique epitaxial growth technology for RF and power components and devices, today announced strong results for 2019 with 300% year-on-year growth from 2018. – “2019 was an outstanding year for SweGaN with a doubling of commercial orders and collaboration in multiple prestigious GaN epitaxial solutions SweGaN AB, a manufacturer of custom-made GaN-on-SiC epitaxial wafers based on a unique epitaxial growth technology for RF and power components and devices, today announced strong results for 2019 with 300% year-on-year growth from 2018. – “2019 was an outstanding year for SweGaN with a doubling of commercial orders and collaboration in multiple prestigious wide-bandgap semiconductors SweGaN AB, a manufacturer of custom-made GaN-on-SiC epitaxial wafers based on a unique epitaxial growth technology for RF and power components and devices, today announced strong results for 2019 with 300% year-on-year growth from 2018. – “2019 was an outstanding year for SweGaN with a doubling of commercial orders and collaboration in multiple prestigious epitaxial growth SweGaN AB, a manufacturer of custom-made GaN-on-SiC epitaxial wafers based on a unique epitaxial growth technology for RF and power components and devices, today announced strong results for 2019 with 300% year-on-year growth from 2018. – “2019 was an outstanding year for SweGaN with a doubling of commercial orders and collaboration in multiple prestigious epitaxial solutions SweGaN AB, a manufacturer of custom-made GaN-on-SiC epitaxial wafers based on a unique epitaxial growth technology for RF and power components and devices, today announced strong results for 2019 with 300% year-on-year growth from 2018. – “2019 was an outstanding year for SweGaN with a doubling of commercial orders and collaboration in multiple prestigious Transmorphic HeteroepitaxySweGaN AB, a manufacturer of custom-made GaN-on-SiC epitaxial wafers based on a unique epitaxial growth technology for RF and power components and devices, today announced strong results for 2019 with 300% year-on-year growth from 2018. – “2019 was an outstanding year for SweGaN with a doubling of commercial orders and collaboration in multiple prestigious GaN-on-SiC epitaxial solutionsSwedish GaN-on-SiC wafer specialist SweGaN reports robust 2019 YoY growth. - [SweGaN a proud corporate sponsor of community sports](https://swegan.se/swegan-a-proud-corporate-sponsor-of-community-sports/) - “SweGaN has its heart in Linköping. Our employees live here, as well as their families. As a local tech company, we see ourselves not just as a corporate entity, but also as part of the community. Giving back is a core part of our values.”- Dr. Ted Chen, CEO and Co-founder at SweGaN.Linköping's Pingisklubb is one of GaN HEMT epitaxial solution “SweGaN has its heart in Linköping. Our employees live here, as well as their families. As a local tech company, we see ourselves not just as a corporate entity, but also as part of the community. Giving back is a core part of our values.”- Dr. Ted Chen, CEO and Co-founder at SweGaN.Linköping's Pingisklubb is one of QuanFINE® epitaxial solutions “SweGaN has its heart in Linköping. Our employees live here, as well as their families. As a local tech company, we see ourselves not just as a corporate entity, but also as part of the community. Giving back is a core part of our values.”- Dr. Ted Chen, CEO and Co-founder at SweGaN.Linköping's Pingisklubb is one of GaN epitaxial solutions “SweGaN has its heart in Linköping. Our employees live here, as well as their families. As a local tech company, we see ourselves not just as a corporate entity, but also as part of the community. Giving back is a core part of our values.”- Dr. Ted Chen, CEO and Co-founder at SweGaN.Linköping's Pingisklubb is one of wide-bandgap semiconductors “SweGaN has its heart in Linköping. Our employees live here, as well as their families. As a local tech company, we see ourselves not just as a corporate entity, but also as part of the community. Giving back is a core part of our values.”- Dr. Ted Chen, CEO and Co-founder at SweGaN.Linköping's Pingisklubb is one of epitaxial growth “SweGaN has its heart in Linköping. Our employees live here, as well as their families. As a local tech company, we see ourselves not just as a corporate entity, but also as part of the community. Giving back is a core part of our values.”- Dr. Ted Chen, CEO and Co-founder at SweGaN.Linköping's Pingisklubb is one of epitaxial solutions “SweGaN has its heart in Linköping. Our employees live here, as well as their families. As a local tech company, we see ourselves not just as a corporate entity, but also as part of the community. Giving back is a core part of our values.”- Dr. Ted Chen, CEO and Co-founder at SweGaN.Linköping's Pingisklubb is one of Transmorphic Heteroepitaxy“SweGaN has its heart in Linköping. Our employees live here, as well as their families. As a local tech company, we see ourselves not just as a corporate entity, but also as part of the community. Giving back is a core part of our values.”- Dr. Ted Chen, CEO and Co-founder at SweGaN.Linköping's Pingisklubb is one of GaN-on-SiC epitaxial solutionsWe are proud to support local community and youth activities as a corporate sponsor of the Linköping Ping Pong Club - [SGAN-NEXT Consortium: European supply chain with GaN epitaxial wafers](https://swegan.se/sgan-next-consortium-european-supply-chain-with-gan-epitaxial-wafers/) - 9 partners in 5 countries covering all the steps in the product development: European supply chain with GaN epitaxial wafers Improved 0.1–um GaN technology Capability to design/implement GaN-based solutions Advanced modules for high frequency operations Swegan is developing an advanced GaN on SiC epitaxy process as part of the SGAN-NEXT project. More details about the GaN HEMT epitaxial solution 9 partners in 5 countries covering all the steps in the product development: European supply chain with GaN epitaxial wafers Improved 0.1–um GaN technology Capability to design/implement GaN-based solutions Advanced modules for high frequency operations Swegan is developing an advanced GaN on SiC epitaxy process as part of the SGAN-NEXT project. More details about the QuanFINE® epitaxial solutions 9 partners in 5 countries covering all the steps in the product development: European supply chain with GaN epitaxial wafers Improved 0.1–um GaN technology Capability to design/implement GaN-based solutions Advanced modules for high frequency operations Swegan is developing an advanced GaN on SiC epitaxy process as part of the SGAN-NEXT project. More details about the GaN epitaxial solutions 9 partners in 5 countries covering all the steps in the product development: European supply chain with GaN epitaxial wafers Improved 0.1–um GaN technology Capability to design/implement GaN-based solutions Advanced modules for high frequency operations Swegan is developing an advanced GaN on SiC epitaxy process as part of the SGAN-NEXT project. More details about the wide-bandgap semiconductors 9 partners in 5 countries covering all the steps in the product development: European supply chain with GaN epitaxial wafers Improved 0.1–um GaN technology Capability to design/implement GaN-based solutions Advanced modules for high frequency operations Swegan is developing an advanced GaN on SiC epitaxy process as part of the SGAN-NEXT project. More details about the epitaxial growth 9 partners in 5 countries covering all the steps in the product development: European supply chain with GaN epitaxial wafers Improved 0.1–um GaN technology Capability to design/implement GaN-based solutions Advanced modules for high frequency operations Swegan is developing an advanced GaN on SiC epitaxy process as part of the SGAN-NEXT project. More details about the epitaxial solutions 9 partners in 5 countries covering all the steps in the product development: European supply chain with GaN epitaxial wafers Improved 0.1–um GaN technology Capability to design/implement GaN-based solutions Advanced modules for high frequency operations Swegan is developing an advanced GaN on SiC epitaxy process as part of the SGAN-NEXT project. More details about the Transmorphic Heteroepitaxy9 partners in 5 countries covering all the steps in the product development: European supply chain with GaN epitaxial wafers Improved 0.1–um GaN technology Capability to design/implement GaN-based solutions Advanced modules for high frequency operations Swegan is developing an advanced GaN on SiC epitaxy process as part of the SGAN-NEXT project. More details about the GaN-on-SiC epitaxial solutionsSweGaN a part of GaN project focusing on advanced Europe-based space qualified GaN technology and components for next generation Space Communications systems. - [Business Sweden-hosted delegation in Rome](https://swegan.se/business-sweden-hosted-delegation-in-rome/) - A big thank you to Business Sweden and Embassy of Sweden in Rome! 👏 Earlier this week, SweGaN CEO Jr-Tai Chen had the unique opportunity to join a delegation of business leaders from 20 Swedish companies for a special two-day event led by the Swedish Minister for Energy, Business and Industry and Deputy Prime Minister GaN HEMT epitaxial solution A big thank you to Business Sweden and Embassy of Sweden in Rome! 👏 Earlier this week, SweGaN CEO Jr-Tai Chen had the unique opportunity to join a delegation of business leaders from 20 Swedish companies for a special two-day event led by the Swedish Minister for Energy, Business and Industry and Deputy Prime Minister QuanFINE® epitaxial solutions A big thank you to Business Sweden and Embassy of Sweden in Rome! 👏 Earlier this week, SweGaN CEO Jr-Tai Chen had the unique opportunity to join a delegation of business leaders from 20 Swedish companies for a special two-day event led by the Swedish Minister for Energy, Business and Industry and Deputy Prime Minister GaN epitaxial solutions A big thank you to Business Sweden and Embassy of Sweden in Rome! 👏 Earlier this week, SweGaN CEO Jr-Tai Chen had the unique opportunity to join a delegation of business leaders from 20 Swedish companies for a special two-day event led by the Swedish Minister for Energy, Business and Industry and Deputy Prime Minister wide-bandgap semiconductors A big thank you to Business Sweden and Embassy of Sweden in Rome! 👏 Earlier this week, SweGaN CEO Jr-Tai Chen had the unique opportunity to join a delegation of business leaders from 20 Swedish companies for a special two-day event led by the Swedish Minister for Energy, Business and Industry and Deputy Prime Minister epitaxial growth A big thank you to Business Sweden and Embassy of Sweden in Rome! 👏 Earlier this week, SweGaN CEO Jr-Tai Chen had the unique opportunity to join a delegation of business leaders from 20 Swedish companies for a special two-day event led by the Swedish Minister for Energy, Business and Industry and Deputy Prime Minister epitaxial solutions A big thank you to Business Sweden and Embassy of Sweden in Rome! 👏 Earlier this week, SweGaN CEO Jr-Tai Chen had the unique opportunity to join a delegation of business leaders from 20 Swedish companies for a special two-day event led by the Swedish Minister for Energy, Business and Industry and Deputy Prime Minister Transmorphic HeteroepitaxyA big thank you to Business Sweden and Embassy of Sweden in Rome! 👏 Earlier this week, SweGaN CEO Jr-Tai Chen had the unique opportunity to join a delegation of business leaders from 20 Swedish companies for a special two-day event led by the Swedish Minister for Energy, Business and Industry and Deputy Prime Minister GaN-on-SiC epitaxial solutionsSweGaN CEO joins delegation from 20 Swedish companies led by Swedish Minister for Energy, Business & Industry and Deputy Prime Minister. - [Cookie Notice SweGaN AB](https://swegan.se/cookie-notice-swegan-ab/) - Cookie Notice SweGaN AB This cookie notice applies to the use by cookies on the SweGaN website www.swegan.se. The purpose of this notice is to provide you with information about what cookies are and how they work. It also explains what cookies we use, what they do and how you can control what cookies we GaN HEMT epitaxial solution Cookie Notice SweGaN AB This cookie notice applies to the use by cookies on the SweGaN website www.swegan.se. The purpose of this notice is to provide you with information about what cookies are and how they work. It also explains what cookies we use, what they do and how you can control what cookies we QuanFINE® epitaxial solutions Cookie Notice SweGaN AB This cookie notice applies to the use by cookies on the SweGaN website www.swegan.se. The purpose of this notice is to provide you with information about what cookies are and how they work. It also explains what cookies we use, what they do and how you can control what cookies we GaN epitaxial solutions Cookie Notice SweGaN AB This cookie notice applies to the use by cookies on the SweGaN website www.swegan.se. The purpose of this notice is to provide you with information about what cookies are and how they work. It also explains what cookies we use, what they do and how you can control what cookies we wide-bandgap semiconductors Cookie Notice SweGaN AB This cookie notice applies to the use by cookies on the SweGaN website www.swegan.se. The purpose of this notice is to provide you with information about what cookies are and how they work. It also explains what cookies we use, what they do and how you can control what cookies we epitaxial growth Cookie Notice SweGaN AB This cookie notice applies to the use by cookies on the SweGaN website www.swegan.se. The purpose of this notice is to provide you with information about what cookies are and how they work. It also explains what cookies we use, what they do and how you can control what cookies we epitaxial solutions Cookie Notice SweGaN AB This cookie notice applies to the use by cookies on the SweGaN website www.swegan.se. The purpose of this notice is to provide you with information about what cookies are and how they work. It also explains what cookies we use, what they do and how you can control what cookies we Transmorphic HeteroepitaxyCookie Notice SweGaN AB This cookie notice applies to the use by cookies on the SweGaN website www.swegan.se. The purpose of this notice is to provide you with information about what cookies are and how they work. It also explains what cookies we use, what they do and how you can control what cookies we GaN-on-SiC epitaxial solutionsCookie Notice SweGaN AB This cookie notice applies to the use by cookies on the SweGaN website www.swegan.se. The purpose of this notice is to provide you with information about what cookies are and how they work. It also explains what cookies we use, what they do and how you can control what cookies we - [SweGaN and Chalmers University demonstrate high-voltage GaN power devices with a high breakdown voltage of >1600V and low leakage current of 22nA/mm on QuanFINE® epitaxial solutions](https://swegan.se/swegan-and-chalmers-university-demonstrate-high-voltage-gan-power-devices-with-a-high-breakdown-voltage/) - Chalmers University of Technology and SweGaN AB, manufacturer of custom-made GaN-on-SiC epitaxial wafers for the devices used in telecom, satellite, defense, and power electronics, announce a publication in Electron Device Letters, demonstrating new state-of-the-art results of high-voltage GaN power devices enabled by Chalmers MIS-HEMT technology and SweGaN QuanFINE buffer-free GaN-on-SiC materials. Among key findings, the research identifies QuanFINE epiwafers as a GaN HEMT epitaxial solution Chalmers University of Technology and SweGaN AB, manufacturer of custom-made GaN-on-SiC epitaxial wafers for the devices used in telecom, satellite, defense, and power electronics, announce a publication in Electron Device Letters, demonstrating new state-of-the-art results of high-voltage GaN power devices enabled by Chalmers MIS-HEMT technology and SweGaN QuanFINE buffer-free GaN-on-SiC materials. Among key findings, the research identifies QuanFINE epiwafers as a QuanFINE® epitaxial solutions Chalmers University of Technology and SweGaN AB, manufacturer of custom-made GaN-on-SiC epitaxial wafers for the devices used in telecom, satellite, defense, and power electronics, announce a publication in Electron Device Letters, demonstrating new state-of-the-art results of high-voltage GaN power devices enabled by Chalmers MIS-HEMT technology and SweGaN QuanFINE buffer-free GaN-on-SiC materials. Among key findings, the research identifies QuanFINE epiwafers as a GaN epitaxial solutions Chalmers University of Technology and SweGaN AB, manufacturer of custom-made GaN-on-SiC epitaxial wafers for the devices used in telecom, satellite, defense, and power electronics, announce a publication in Electron Device Letters, demonstrating new state-of-the-art results of high-voltage GaN power devices enabled by Chalmers MIS-HEMT technology and SweGaN QuanFINE buffer-free GaN-on-SiC materials. Among key findings, the research identifies QuanFINE epiwafers as a wide-bandgap semiconductors Chalmers University of Technology and SweGaN AB, manufacturer of custom-made GaN-on-SiC epitaxial wafers for the devices used in telecom, satellite, defense, and power electronics, announce a publication in Electron Device Letters, demonstrating new state-of-the-art results of high-voltage GaN power devices enabled by Chalmers MIS-HEMT technology and SweGaN QuanFINE buffer-free GaN-on-SiC materials. Among key findings, the research identifies QuanFINE epiwafers as a epitaxial growth Chalmers University of Technology and SweGaN AB, manufacturer of custom-made GaN-on-SiC epitaxial wafers for the devices used in telecom, satellite, defense, and power electronics, announce a publication in Electron Device Letters, demonstrating new state-of-the-art results of high-voltage GaN power devices enabled by Chalmers MIS-HEMT technology and SweGaN QuanFINE buffer-free GaN-on-SiC materials. Among key findings, the research identifies QuanFINE epiwafers as a epitaxial solutions Chalmers University of Technology and SweGaN AB, manufacturer of custom-made GaN-on-SiC epitaxial wafers for the devices used in telecom, satellite, defense, and power electronics, announce a publication in Electron Device Letters, demonstrating new state-of-the-art results of high-voltage GaN power devices enabled by Chalmers MIS-HEMT technology and SweGaN QuanFINE buffer-free GaN-on-SiC materials. Among key findings, the research identifies QuanFINE epiwafers as a Transmorphic HeteroepitaxyChalmers University of Technology and SweGaN AB, manufacturer of custom-made GaN-on-SiC epitaxial wafers for the devices used in telecom, satellite, defense, and power electronics, announce a publication in Electron Device Letters, demonstrating new state-of-the-art results of high-voltage GaN power devices enabled by Chalmers MIS-HEMT technology and SweGaN QuanFINE buffer-free GaN-on-SiC materials. Among key findings, the research identifies QuanFINE epiwafers as a GaN-on-SiC epitaxial solutionsSweGaN and Chalmers demonstrate high-voltage GaN power devices: High breakdown voltage, low leakage current. - [Joint team from SweGaN, IEMN and Linköping University reveals ground-breaking epitaxial growth to produce new generation GaN-on-SiC epiwafers for power devices  ](https://swegan.se/joint-team-from-swegan-iemn-and-linkoping-university-reveals-ground-breaking-epitaxial-growth-to-produce-new-generation-gan-on-sic-epiwafers-for-power-devices/) - Joint team from SweGaN, IEMN and Linköping University reveals ground-breaking epitaxial growth to produce new generation GaN-on-SiC epiwafers for power devices SiC material promising significant power savings in hybrid Electric Vehicles (EV), EV and charging stations for EV, as well as PhotoVoltaic (PV) solar inverters and other high power applications SweGaN AB, GaN HEMT epitaxial solution Joint team from SweGaN, IEMN and Linköping University reveals ground-breaking epitaxial growth to produce new generation GaN-on-SiC epiwafers for power devices SiC material promising significant power savings in hybrid Electric Vehicles (EV), EV and charging stations for EV, as well as PhotoVoltaic (PV) solar inverters and other high power applications SweGaN AB, QuanFINE® epitaxial solutions Joint team from SweGaN, IEMN and Linköping University reveals ground-breaking epitaxial growth to produce new generation GaN-on-SiC epiwafers for power devices SiC material promising significant power savings in hybrid Electric Vehicles (EV), EV and charging stations for EV, as well as PhotoVoltaic (PV) solar inverters and other high power applications SweGaN AB, GaN epitaxial solutions Joint team from SweGaN, IEMN and Linköping University reveals ground-breaking epitaxial growth to produce new generation GaN-on-SiC epiwafers for power devices SiC material promising significant power savings in hybrid Electric Vehicles (EV), EV and charging stations for EV, as well as PhotoVoltaic (PV) solar inverters and other high power applications SweGaN AB, wide-bandgap semiconductors Joint team from SweGaN, IEMN and Linköping University reveals ground-breaking epitaxial growth to produce new generation GaN-on-SiC epiwafers for power devices SiC material promising significant power savings in hybrid Electric Vehicles (EV), EV and charging stations for EV, as well as PhotoVoltaic (PV) solar inverters and other high power applications SweGaN AB, epitaxial growth Joint team from SweGaN, IEMN and Linköping University reveals ground-breaking epitaxial growth to produce new generation GaN-on-SiC epiwafers for power devices SiC material promising significant power savings in hybrid Electric Vehicles (EV), EV and charging stations for EV, as well as PhotoVoltaic (PV) solar inverters and other high power applications SweGaN AB, epitaxial solutions Joint team from SweGaN, IEMN and Linköping University reveals ground-breaking epitaxial growth to produce new generation GaN-on-SiC epiwafers for power devices SiC material promising significant power savings in hybrid Electric Vehicles (EV), EV and charging stations for EV, as well as PhotoVoltaic (PV) solar inverters and other high power applications SweGaN AB, Transmorphic HeteroepitaxyJoint team from SweGaN, IEMN and Linköping University reveals ground-breaking epitaxial growth to produce new generation GaN-on-SiC epiwafers for power devices SiC material promising significant power savings in hybrid Electric Vehicles (EV), EV and charging stations for EV, as well as PhotoVoltaic (PV) solar inverters and other high power applications SweGaN AB, GaN-on-SiC epitaxial solutionsSweGaN, IEMN and LiU reveal ground-breaking epitaxial growth to produce new generation epiwafers for power devices. - [SweGaN selected as one of the Nordic Cleantech Open top 25 most innovative start-ups ](https://swegan.se/swegan-selected-as-one-of-the-nordic-cleantech-open-top-25-most-innovative-start-ups/) - Linköping, Sweden, 2020-02-26: SweGaN AB, a manufacturer of custom-made GaN-on-SiC epitaxial wafers based on a unique epitaxial growth technology for RF and power components and devices, today shared it has been selected from among 140 promising Nordic and Baltic companies in the 9th Nordic Cleantech Open competition to the top 25 most innovative start-ups and GaN HEMT epitaxial solution Linköping, Sweden, 2020-02-26: SweGaN AB, a manufacturer of custom-made GaN-on-SiC epitaxial wafers based on a unique epitaxial growth technology for RF and power components and devices, today shared it has been selected from among 140 promising Nordic and Baltic companies in the 9th Nordic Cleantech Open competition to the top 25 most innovative start-ups and QuanFINE® epitaxial solutions Linköping, Sweden, 2020-02-26: SweGaN AB, a manufacturer of custom-made GaN-on-SiC epitaxial wafers based on a unique epitaxial growth technology for RF and power components and devices, today shared it has been selected from among 140 promising Nordic and Baltic companies in the 9th Nordic Cleantech Open competition to the top 25 most innovative start-ups and GaN epitaxial solutions Linköping, Sweden, 2020-02-26: SweGaN AB, a manufacturer of custom-made GaN-on-SiC epitaxial wafers based on a unique epitaxial growth technology for RF and power components and devices, today shared it has been selected from among 140 promising Nordic and Baltic companies in the 9th Nordic Cleantech Open competition to the top 25 most innovative start-ups and wide-bandgap semiconductors Linköping, Sweden, 2020-02-26: SweGaN AB, a manufacturer of custom-made GaN-on-SiC epitaxial wafers based on a unique epitaxial growth technology for RF and power components and devices, today shared it has been selected from among 140 promising Nordic and Baltic companies in the 9th Nordic Cleantech Open competition to the top 25 most innovative start-ups and epitaxial growth Linköping, Sweden, 2020-02-26: SweGaN AB, a manufacturer of custom-made GaN-on-SiC epitaxial wafers based on a unique epitaxial growth technology for RF and power components and devices, today shared it has been selected from among 140 promising Nordic and Baltic companies in the 9th Nordic Cleantech Open competition to the top 25 most innovative start-ups and epitaxial solutions Linköping, Sweden, 2020-02-26: SweGaN AB, a manufacturer of custom-made GaN-on-SiC epitaxial wafers based on a unique epitaxial growth technology for RF and power components and devices, today shared it has been selected from among 140 promising Nordic and Baltic companies in the 9th Nordic Cleantech Open competition to the top 25 most innovative start-ups and Transmorphic HeteroepitaxyLinköping, Sweden, 2020-02-26: SweGaN AB, a manufacturer of custom-made GaN-on-SiC epitaxial wafers based on a unique epitaxial growth technology for RF and power components and devices, today shared it has been selected from among 140 promising Nordic and Baltic companies in the 9th Nordic Cleantech Open competition to the top 25 most innovative start-ups and GaN-on-SiC epitaxial solutionsSweGaN selected as one of the Nordic Cleantech Open top 25 most innovative start-ups. - [New ‘buffer-free’ concept for GaN-on-SiC high electron mobility transistors reveals competitive microwave performance and device efficiency](https://swegan.se/new-buffer-free-concept-for-gan-on-sic-high-electron-mobility-transistors-reveals-competitive-microwave-performance-and-device-efficiency/) - May 19th, 2020: SweGaN AB, a manufacturer of custom-made GaN-on-SiC epitaxial wafers based on a unique epitaxial growth technology for RF and power components and devices today announced a new benchmark for GaN high-frequency devices based on SweGaN QuanFINE® material. The demonstration promises commercial benefits for the entire GaN RF value chains including telecom, space, GaN HEMT epitaxial solution May 19th, 2020: SweGaN AB, a manufacturer of custom-made GaN-on-SiC epitaxial wafers based on a unique epitaxial growth technology for RF and power components and devices today announced a new benchmark for GaN high-frequency devices based on SweGaN QuanFINE® material. The demonstration promises commercial benefits for the entire GaN RF value chains including telecom, space, QuanFINE® epitaxial solutions May 19th, 2020: SweGaN AB, a manufacturer of custom-made GaN-on-SiC epitaxial wafers based on a unique epitaxial growth technology for RF and power components and devices today announced a new benchmark for GaN high-frequency devices based on SweGaN QuanFINE® material. The demonstration promises commercial benefits for the entire GaN RF value chains including telecom, space, GaN epitaxial solutions May 19th, 2020: SweGaN AB, a manufacturer of custom-made GaN-on-SiC epitaxial wafers based on a unique epitaxial growth technology for RF and power components and devices today announced a new benchmark for GaN high-frequency devices based on SweGaN QuanFINE® material. The demonstration promises commercial benefits for the entire GaN RF value chains including telecom, space, wide-bandgap semiconductors May 19th, 2020: SweGaN AB, a manufacturer of custom-made GaN-on-SiC epitaxial wafers based on a unique epitaxial growth technology for RF and power components and devices today announced a new benchmark for GaN high-frequency devices based on SweGaN QuanFINE® material. The demonstration promises commercial benefits for the entire GaN RF value chains including telecom, space, epitaxial growth May 19th, 2020: SweGaN AB, a manufacturer of custom-made GaN-on-SiC epitaxial wafers based on a unique epitaxial growth technology for RF and power components and devices today announced a new benchmark for GaN high-frequency devices based on SweGaN QuanFINE® material. The demonstration promises commercial benefits for the entire GaN RF value chains including telecom, space, epitaxial solutions May 19th, 2020: SweGaN AB, a manufacturer of custom-made GaN-on-SiC epitaxial wafers based on a unique epitaxial growth technology for RF and power components and devices today announced a new benchmark for GaN high-frequency devices based on SweGaN QuanFINE® material. The demonstration promises commercial benefits for the entire GaN RF value chains including telecom, space, Transmorphic HeteroepitaxyMay 19th, 2020: SweGaN AB, a manufacturer of custom-made GaN-on-SiC epitaxial wafers based on a unique epitaxial growth technology for RF and power components and devices today announced a new benchmark for GaN high-frequency devices based on SweGaN QuanFINE® material. The demonstration promises commercial benefits for the entire GaN RF value chains including telecom, space, GaN-on-SiC epitaxial solutionsNew ‘buffer-free’ concept for GaN-on-SiC high electron mobility transistors reveals competitive microwave performance and device efficiency. - [SweGaN named a finalist in the Nordic region’s Techarena Challenge 2020](https://swegan.se/swegan-named-a-finalist-in-the-nordic-regions-techarena-challenge-2020/) - June 3rd, 2020: SweGaN AB, a manufacturer of custom-made GaN-on-SiC epitaxial wafers based on a unique epitaxial growth technology for RF and power components and devices, today announced that SweGaN is selected as one of the Nordic region’s 50 leading companies in the Techarenan Challenge 2020 (web-article in Swedish). For the seventh year, the GaN HEMT epitaxial solution June 3rd, 2020: SweGaN AB, a manufacturer of custom-made GaN-on-SiC epitaxial wafers based on a unique epitaxial growth technology for RF and power components and devices, today announced that SweGaN is selected as one of the Nordic region’s 50 leading companies in the Techarenan Challenge 2020 (web-article in Swedish). For the seventh year, the QuanFINE® epitaxial solutions June 3rd, 2020: SweGaN AB, a manufacturer of custom-made GaN-on-SiC epitaxial wafers based on a unique epitaxial growth technology for RF and power components and devices, today announced that SweGaN is selected as one of the Nordic region’s 50 leading companies in the Techarenan Challenge 2020 (web-article in Swedish). For the seventh year, the GaN epitaxial solutions June 3rd, 2020: SweGaN AB, a manufacturer of custom-made GaN-on-SiC epitaxial wafers based on a unique epitaxial growth technology for RF and power components and devices, today announced that SweGaN is selected as one of the Nordic region’s 50 leading companies in the Techarenan Challenge 2020 (web-article in Swedish). For the seventh year, the wide-bandgap semiconductors June 3rd, 2020: SweGaN AB, a manufacturer of custom-made GaN-on-SiC epitaxial wafers based on a unique epitaxial growth technology for RF and power components and devices, today announced that SweGaN is selected as one of the Nordic region’s 50 leading companies in the Techarenan Challenge 2020 (web-article in Swedish). For the seventh year, the epitaxial growth June 3rd, 2020: SweGaN AB, a manufacturer of custom-made GaN-on-SiC epitaxial wafers based on a unique epitaxial growth technology for RF and power components and devices, today announced that SweGaN is selected as one of the Nordic region’s 50 leading companies in the Techarenan Challenge 2020 (web-article in Swedish). For the seventh year, the epitaxial solutions June 3rd, 2020: SweGaN AB, a manufacturer of custom-made GaN-on-SiC epitaxial wafers based on a unique epitaxial growth technology for RF and power components and devices, today announced that SweGaN is selected as one of the Nordic region’s 50 leading companies in the Techarenan Challenge 2020 (web-article in Swedish). For the seventh year, the Transmorphic HeteroepitaxyJune 3rd, 2020: SweGaN AB, a manufacturer of custom-made GaN-on-SiC epitaxial wafers based on a unique epitaxial growth technology for RF and power components and devices, today announced that SweGaN is selected as one of the Nordic region’s 50 leading companies in the Techarenan Challenge 2020 (web-article in Swedish). For the seventh year, the GaN-on-SiC epitaxial solutionsSweGaN named a finalist in the Nordic region’s Techarena Challenge 2020. - [1H 2020: SweGaN establishes corporate headquarters in new facility - launches new 150mm GaN-on-SiC epiwafer product](https://swegan.se/1h-2020-swegan-establishes-corporate-headquarters-in-new-facility-launches-new-150mm-gan-on-sic-epiwafer-product/) - Linköping, Sweden, July 9th, 2020: SweGaN AB, manufacturer of GaN-on-SiC epitaxial wafers based on unique epitaxial growth technologies for telecom, satellite, defense and power applications, announced they have relocated their headquarters to a new facility in Linköping, Sweden, which combines a lab housing several production tools and an administration and office area. Concurrently, SweGaN announced GaN HEMT epitaxial solution Linköping, Sweden, July 9th, 2020: SweGaN AB, manufacturer of GaN-on-SiC epitaxial wafers based on unique epitaxial growth technologies for telecom, satellite, defense and power applications, announced they have relocated their headquarters to a new facility in Linköping, Sweden, which combines a lab housing several production tools and an administration and office area. Concurrently, SweGaN announced QuanFINE® epitaxial solutions Linköping, Sweden, July 9th, 2020: SweGaN AB, manufacturer of GaN-on-SiC epitaxial wafers based on unique epitaxial growth technologies for telecom, satellite, defense and power applications, announced they have relocated their headquarters to a new facility in Linköping, Sweden, which combines a lab housing several production tools and an administration and office area. Concurrently, SweGaN announced GaN epitaxial solutions Linköping, Sweden, July 9th, 2020: SweGaN AB, manufacturer of GaN-on-SiC epitaxial wafers based on unique epitaxial growth technologies for telecom, satellite, defense and power applications, announced they have relocated their headquarters to a new facility in Linköping, Sweden, which combines a lab housing several production tools and an administration and office area. Concurrently, SweGaN announced wide-bandgap semiconductors Linköping, Sweden, July 9th, 2020: SweGaN AB, manufacturer of GaN-on-SiC epitaxial wafers based on unique epitaxial growth technologies for telecom, satellite, defense and power applications, announced they have relocated their headquarters to a new facility in Linköping, Sweden, which combines a lab housing several production tools and an administration and office area. Concurrently, SweGaN announced epitaxial growth Linköping, Sweden, July 9th, 2020: SweGaN AB, manufacturer of GaN-on-SiC epitaxial wafers based on unique epitaxial growth technologies for telecom, satellite, defense and power applications, announced they have relocated their headquarters to a new facility in Linköping, Sweden, which combines a lab housing several production tools and an administration and office area. Concurrently, SweGaN announced epitaxial solutions Linköping, Sweden, July 9th, 2020: SweGaN AB, manufacturer of GaN-on-SiC epitaxial wafers based on unique epitaxial growth technologies for telecom, satellite, defense and power applications, announced they have relocated their headquarters to a new facility in Linköping, Sweden, which combines a lab housing several production tools and an administration and office area. Concurrently, SweGaN announced Transmorphic HeteroepitaxyLinköping, Sweden, July 9th, 2020: SweGaN AB, manufacturer of GaN-on-SiC epitaxial wafers based on unique epitaxial growth technologies for telecom, satellite, defense and power applications, announced they have relocated their headquarters to a new facility in Linköping, Sweden, which combines a lab housing several production tools and an administration and office area. Concurrently, SweGaN announced GaN-on-SiC epitaxial solutions1H 2020: SweGaN establishes corporate HQ in new facility - launches new 150mm epiwafer. - [SweGaN selected for second year on list of Sweden’s hottest tech startups](https://swegan.se/swegan-selected-for-second-year-on-list-of-swedens-hottest-tech-startups/) - SweGaN selected for second year on list of Sweden’s hottest tech startups 10 September 2020 / Link to semiconductor today article SweGaN AB of Linköping, Sweden, which manufactures custom gallium nitride on silicon carbide (GaN-on-SiC) epitaxial wafers (based on a unique growth technology) for telecom, satellite, defense and power applications, has been named for the second year GaN HEMT epitaxial solution SweGaN selected for second year on list of Sweden’s hottest tech startups 10 September 2020 / Link to semiconductor today article SweGaN AB of Linköping, Sweden, which manufactures custom gallium nitride on silicon carbide (GaN-on-SiC) epitaxial wafers (based on a unique growth technology) for telecom, satellite, defense and power applications, has been named for the second year QuanFINE® epitaxial solutions SweGaN selected for second year on list of Sweden’s hottest tech startups 10 September 2020 / Link to semiconductor today article SweGaN AB of Linköping, Sweden, which manufactures custom gallium nitride on silicon carbide (GaN-on-SiC) epitaxial wafers (based on a unique growth technology) for telecom, satellite, defense and power applications, has been named for the second year GaN epitaxial solutions SweGaN selected for second year on list of Sweden’s hottest tech startups 10 September 2020 / Link to semiconductor today article SweGaN AB of Linköping, Sweden, which manufactures custom gallium nitride on silicon carbide (GaN-on-SiC) epitaxial wafers (based on a unique growth technology) for telecom, satellite, defense and power applications, has been named for the second year wide-bandgap semiconductors SweGaN selected for second year on list of Sweden’s hottest tech startups 10 September 2020 / Link to semiconductor today article SweGaN AB of Linköping, Sweden, which manufactures custom gallium nitride on silicon carbide (GaN-on-SiC) epitaxial wafers (based on a unique growth technology) for telecom, satellite, defense and power applications, has been named for the second year epitaxial growth SweGaN selected for second year on list of Sweden’s hottest tech startups 10 September 2020 / Link to semiconductor today article SweGaN AB of Linköping, Sweden, which manufactures custom gallium nitride on silicon carbide (GaN-on-SiC) epitaxial wafers (based on a unique growth technology) for telecom, satellite, defense and power applications, has been named for the second year epitaxial solutions SweGaN selected for second year on list of Sweden’s hottest tech startups 10 September 2020 / Link to semiconductor today article SweGaN AB of Linköping, Sweden, which manufactures custom gallium nitride on silicon carbide (GaN-on-SiC) epitaxial wafers (based on a unique growth technology) for telecom, satellite, defense and power applications, has been named for the second year Transmorphic HeteroepitaxySweGaN selected for second year on list of Sweden’s hottest tech startups 10 September 2020 / Link to semiconductor today article SweGaN AB of Linköping, Sweden, which manufactures custom gallium nitride on silicon carbide (GaN-on-SiC) epitaxial wafers (based on a unique growth technology) for telecom, satellite, defense and power applications, has been named for the second year GaN-on-SiC epitaxial solutionsSweGaN selected for second year on list of Sweden’s hottest tech startups. - [Swedish epiwafer specialist SweGaN introduces new Chairman](https://swegan.se/swedish-epiwafer-specialist-swegan-introduces-new-chairman-2/) - Swedish epiwafer specialist SweGaN introduces new ChairmanLink to Electronics Media article – November 12, 2020SweGaN AB announces its BoD Chairman Mats Andersson has stepped down, passing the SweGaN torch to Vice Chairman, Agneta Franksson. -“We are very sad to see Mats leave, confirms Olle Kordina, CEO and co-founder at SweGaN. As Chairman, he brought a unique GaN HEMT epitaxial solution Swedish epiwafer specialist SweGaN introduces new ChairmanLink to Electronics Media article – November 12, 2020SweGaN AB announces its BoD Chairman Mats Andersson has stepped down, passing the SweGaN torch to Vice Chairman, Agneta Franksson. -“We are very sad to see Mats leave, confirms Olle Kordina, CEO and co-founder at SweGaN. As Chairman, he brought a unique QuanFINE® epitaxial solutions Swedish epiwafer specialist SweGaN introduces new ChairmanLink to Electronics Media article – November 12, 2020SweGaN AB announces its BoD Chairman Mats Andersson has stepped down, passing the SweGaN torch to Vice Chairman, Agneta Franksson. -“We are very sad to see Mats leave, confirms Olle Kordina, CEO and co-founder at SweGaN. As Chairman, he brought a unique GaN epitaxial solutions Swedish epiwafer specialist SweGaN introduces new ChairmanLink to Electronics Media article – November 12, 2020SweGaN AB announces its BoD Chairman Mats Andersson has stepped down, passing the SweGaN torch to Vice Chairman, Agneta Franksson. -“We are very sad to see Mats leave, confirms Olle Kordina, CEO and co-founder at SweGaN. As Chairman, he brought a unique wide-bandgap semiconductors Swedish epiwafer specialist SweGaN introduces new ChairmanLink to Electronics Media article – November 12, 2020SweGaN AB announces its BoD Chairman Mats Andersson has stepped down, passing the SweGaN torch to Vice Chairman, Agneta Franksson. -“We are very sad to see Mats leave, confirms Olle Kordina, CEO and co-founder at SweGaN. As Chairman, he brought a unique epitaxial growth Swedish epiwafer specialist SweGaN introduces new ChairmanLink to Electronics Media article – November 12, 2020SweGaN AB announces its BoD Chairman Mats Andersson has stepped down, passing the SweGaN torch to Vice Chairman, Agneta Franksson. -“We are very sad to see Mats leave, confirms Olle Kordina, CEO and co-founder at SweGaN. As Chairman, he brought a unique epitaxial solutions Swedish epiwafer specialist SweGaN introduces new ChairmanLink to Electronics Media article – November 12, 2020SweGaN AB announces its BoD Chairman Mats Andersson has stepped down, passing the SweGaN torch to Vice Chairman, Agneta Franksson. -“We are very sad to see Mats leave, confirms Olle Kordina, CEO and co-founder at SweGaN. As Chairman, he brought a unique Transmorphic HeteroepitaxySwedish epiwafer specialist SweGaN introduces new ChairmanLink to Electronics Media article – November 12, 2020SweGaN AB announces its BoD Chairman Mats Andersson has stepped down, passing the SweGaN torch to Vice Chairman, Agneta Franksson. -“We are very sad to see Mats leave, confirms Olle Kordina, CEO and co-founder at SweGaN. As Chairman, he brought a unique GaN-on-SiC epitaxial solutionsSwedish epiwafer specialist SweGaN introduces new Chairman, Agneta Franksson. - [SweGaN Brings its GaN-on-SiC Epitaxial Solutions to Joint ESA Project](https://swegan.se/swegan-brings-its-gan-on-sic-epitaxial-solutions-to-joint-esa-project-2/) - March 25, 2021 / Link to Microwave Journal article SweGaN AB, manufacturer of custom-made GaN-on-SiC epitaxial wafers for components and devices for telecom, satellite, defense and power electronics, announced it is partnering with Ferdinand-Braun-Institut (FBH) and University of Bristol in a European Space Agency (ESA) project “Kassiopeia” that includes a focus on SweGaN’s QuanFINE® GaN-on-SiC epitaxial materials to help boost the device GaN HEMT epitaxial solution March 25, 2021 / Link to Microwave Journal article SweGaN AB, manufacturer of custom-made GaN-on-SiC epitaxial wafers for components and devices for telecom, satellite, defense and power electronics, announced it is partnering with Ferdinand-Braun-Institut (FBH) and University of Bristol in a European Space Agency (ESA) project “Kassiopeia” that includes a focus on SweGaN’s QuanFINE® GaN-on-SiC epitaxial materials to help boost the device QuanFINE® epitaxial solutions March 25, 2021 / Link to Microwave Journal article SweGaN AB, manufacturer of custom-made GaN-on-SiC epitaxial wafers for components and devices for telecom, satellite, defense and power electronics, announced it is partnering with Ferdinand-Braun-Institut (FBH) and University of Bristol in a European Space Agency (ESA) project “Kassiopeia” that includes a focus on SweGaN’s QuanFINE® GaN-on-SiC epitaxial materials to help boost the device GaN epitaxial solutions March 25, 2021 / Link to Microwave Journal article SweGaN AB, manufacturer of custom-made GaN-on-SiC epitaxial wafers for components and devices for telecom, satellite, defense and power electronics, announced it is partnering with Ferdinand-Braun-Institut (FBH) and University of Bristol in a European Space Agency (ESA) project “Kassiopeia” that includes a focus on SweGaN’s QuanFINE® GaN-on-SiC epitaxial materials to help boost the device wide-bandgap semiconductors March 25, 2021 / Link to Microwave Journal article SweGaN AB, manufacturer of custom-made GaN-on-SiC epitaxial wafers for components and devices for telecom, satellite, defense and power electronics, announced it is partnering with Ferdinand-Braun-Institut (FBH) and University of Bristol in a European Space Agency (ESA) project “Kassiopeia” that includes a focus on SweGaN’s QuanFINE® GaN-on-SiC epitaxial materials to help boost the device epitaxial growth March 25, 2021 / Link to Microwave Journal article SweGaN AB, manufacturer of custom-made GaN-on-SiC epitaxial wafers for components and devices for telecom, satellite, defense and power electronics, announced it is partnering with Ferdinand-Braun-Institut (FBH) and University of Bristol in a European Space Agency (ESA) project “Kassiopeia” that includes a focus on SweGaN’s QuanFINE® GaN-on-SiC epitaxial materials to help boost the device epitaxial solutions March 25, 2021 / Link to Microwave Journal article SweGaN AB, manufacturer of custom-made GaN-on-SiC epitaxial wafers for components and devices for telecom, satellite, defense and power electronics, announced it is partnering with Ferdinand-Braun-Institut (FBH) and University of Bristol in a European Space Agency (ESA) project “Kassiopeia” that includes a focus on SweGaN’s QuanFINE® GaN-on-SiC epitaxial materials to help boost the device Transmorphic HeteroepitaxyMarch 25, 2021 / Link to Microwave Journal article SweGaN AB, manufacturer of custom-made GaN-on-SiC epitaxial wafers for components and devices for telecom, satellite, defense and power electronics, announced it is partnering with Ferdinand-Braun-Institut (FBH) and University of Bristol in a European Space Agency (ESA) project “Kassiopeia” that includes a focus on SweGaN’s QuanFINE® GaN-on-SiC epitaxial materials to help boost the device GaN-on-SiC epitaxial solutionsSweGaN Brings its GaN-on-SiC Epitaxial Solutions to Joint ESA Project. - [SweGaN introduces new Head of Production, member of management team](https://swegan.se/swegan-introduces-new-head-of-production-member-of-management-team/) - Linköping, Sweden, October 5th, 2021: SweGaN AB, manufacturer of custom-made GaN-on-SiC epitaxial wafers for components and devices for telecom, satellite, defense and power electronics, today announced the introduction of new member of the SweGaN management team. To meet rapidly growing demands for its performance leading QuanFINE® product, SweGaN has brought in a senior Head of GaN HEMT epitaxial solution Linköping, Sweden, October 5th, 2021: SweGaN AB, manufacturer of custom-made GaN-on-SiC epitaxial wafers for components and devices for telecom, satellite, defense and power electronics, today announced the introduction of new member of the SweGaN management team. To meet rapidly growing demands for its performance leading QuanFINE® product, SweGaN has brought in a senior Head of QuanFINE® epitaxial solutions Linköping, Sweden, October 5th, 2021: SweGaN AB, manufacturer of custom-made GaN-on-SiC epitaxial wafers for components and devices for telecom, satellite, defense and power electronics, today announced the introduction of new member of the SweGaN management team. To meet rapidly growing demands for its performance leading QuanFINE® product, SweGaN has brought in a senior Head of GaN epitaxial solutions Linköping, Sweden, October 5th, 2021: SweGaN AB, manufacturer of custom-made GaN-on-SiC epitaxial wafers for components and devices for telecom, satellite, defense and power electronics, today announced the introduction of new member of the SweGaN management team. To meet rapidly growing demands for its performance leading QuanFINE® product, SweGaN has brought in a senior Head of wide-bandgap semiconductors Linköping, Sweden, October 5th, 2021: SweGaN AB, manufacturer of custom-made GaN-on-SiC epitaxial wafers for components and devices for telecom, satellite, defense and power electronics, today announced the introduction of new member of the SweGaN management team. To meet rapidly growing demands for its performance leading QuanFINE® product, SweGaN has brought in a senior Head of epitaxial growth Linköping, Sweden, October 5th, 2021: SweGaN AB, manufacturer of custom-made GaN-on-SiC epitaxial wafers for components and devices for telecom, satellite, defense and power electronics, today announced the introduction of new member of the SweGaN management team. To meet rapidly growing demands for its performance leading QuanFINE® product, SweGaN has brought in a senior Head of epitaxial solutions Linköping, Sweden, October 5th, 2021: SweGaN AB, manufacturer of custom-made GaN-on-SiC epitaxial wafers for components and devices for telecom, satellite, defense and power electronics, today announced the introduction of new member of the SweGaN management team. To meet rapidly growing demands for its performance leading QuanFINE® product, SweGaN has brought in a senior Head of Transmorphic HeteroepitaxyLinköping, Sweden, October 5th, 2021: SweGaN AB, manufacturer of custom-made GaN-on-SiC epitaxial wafers for components and devices for telecom, satellite, defense and power electronics, today announced the introduction of new member of the SweGaN management team. To meet rapidly growing demands for its performance leading QuanFINE® product, SweGaN has brought in a senior Head of GaN-on-SiC epitaxial solutionsSweGaN introduces new Head of Production, Andreas Westergren, member of management team. - [European semiconductor manufacturer SweGaN secures 12 million Euro investment to significantly expand production capacity, appoints new CEO](https://swegan.se/european-semiconductor-manufacturer-swegan-secures-12-million-euro-investment-to-significantly-expand-production-capacity-appoints-new-ceo/) - Linköping, Sweden, October 4, 2022: SweGaN AB, manufacturer of custom-made Gallium Nitride on Silicon Carbide (GaN-on-SiC) epitaxial wafers for an extensive range of devices used in telecom, satellite, defense, and power electronics, announces it has completed a Series A financing round totaling 125 MSEK (12M Euro). The financing was co-led by Intertech Ventures, Mount Wilson GaN HEMT epitaxial solution Linköping, Sweden, October 4, 2022: SweGaN AB, manufacturer of custom-made Gallium Nitride on Silicon Carbide (GaN-on-SiC) epitaxial wafers for an extensive range of devices used in telecom, satellite, defense, and power electronics, announces it has completed a Series A financing round totaling 125 MSEK (12M Euro). The financing was co-led by Intertech Ventures, Mount Wilson QuanFINE® epitaxial solutions Linköping, Sweden, October 4, 2022: SweGaN AB, manufacturer of custom-made Gallium Nitride on Silicon Carbide (GaN-on-SiC) epitaxial wafers for an extensive range of devices used in telecom, satellite, defense, and power electronics, announces it has completed a Series A financing round totaling 125 MSEK (12M Euro). The financing was co-led by Intertech Ventures, Mount Wilson GaN epitaxial solutions Linköping, Sweden, October 4, 2022: SweGaN AB, manufacturer of custom-made Gallium Nitride on Silicon Carbide (GaN-on-SiC) epitaxial wafers for an extensive range of devices used in telecom, satellite, defense, and power electronics, announces it has completed a Series A financing round totaling 125 MSEK (12M Euro). The financing was co-led by Intertech Ventures, Mount Wilson wide-bandgap semiconductors Linköping, Sweden, October 4, 2022: SweGaN AB, manufacturer of custom-made Gallium Nitride on Silicon Carbide (GaN-on-SiC) epitaxial wafers for an extensive range of devices used in telecom, satellite, defense, and power electronics, announces it has completed a Series A financing round totaling 125 MSEK (12M Euro). The financing was co-led by Intertech Ventures, Mount Wilson epitaxial growth Linköping, Sweden, October 4, 2022: SweGaN AB, manufacturer of custom-made Gallium Nitride on Silicon Carbide (GaN-on-SiC) epitaxial wafers for an extensive range of devices used in telecom, satellite, defense, and power electronics, announces it has completed a Series A financing round totaling 125 MSEK (12M Euro). The financing was co-led by Intertech Ventures, Mount Wilson epitaxial solutions Linköping, Sweden, October 4, 2022: SweGaN AB, manufacturer of custom-made Gallium Nitride on Silicon Carbide (GaN-on-SiC) epitaxial wafers for an extensive range of devices used in telecom, satellite, defense, and power electronics, announces it has completed a Series A financing round totaling 125 MSEK (12M Euro). The financing was co-led by Intertech Ventures, Mount Wilson Transmorphic HeteroepitaxyLinköping, Sweden, October 4, 2022: SweGaN AB, manufacturer of custom-made Gallium Nitride on Silicon Carbide (GaN-on-SiC) epitaxial wafers for an extensive range of devices used in telecom, satellite, defense, and power electronics, announces it has completed a Series A financing round totaling 125 MSEK (12M Euro). The financing was co-led by Intertech Ventures, Mount Wilson GaN-on-SiC epitaxial solutionsSweGaN secures 12 million Euro investment to significantly expand production capacity, appoints new CEO. - [Dagens Nyheter: Now Sweden will secure the technology on which the entire society is based](https://swegan.se/dagens-nyheter-now-sweden-will-secure-the-technology-on-which-the-entire-society-is-based/) - Link to Dagens Nyheter article (in Swedish) October 18, 2023 – Towe Boström The hunt for semiconductors – this is how Sweden will secure the technology on which the whole of society is built) Paula Segura and David Dai show a wafer, the round disk of silicon carbide on which they apply gallium nitride GaN HEMT epitaxial solution Link to Dagens Nyheter article (in Swedish) October 18, 2023 – Towe Boström The hunt for semiconductors – this is how Sweden will secure the technology on which the whole of society is built) Paula Segura and David Dai show a wafer, the round disk of silicon carbide on which they apply gallium nitride QuanFINE® epitaxial solutions Link to Dagens Nyheter article (in Swedish) October 18, 2023 – Towe Boström The hunt for semiconductors – this is how Sweden will secure the technology on which the whole of society is built) Paula Segura and David Dai show a wafer, the round disk of silicon carbide on which they apply gallium nitride GaN epitaxial solutions Link to Dagens Nyheter article (in Swedish) October 18, 2023 – Towe Boström The hunt for semiconductors – this is how Sweden will secure the technology on which the whole of society is built) Paula Segura and David Dai show a wafer, the round disk of silicon carbide on which they apply gallium nitride wide-bandgap semiconductors Link to Dagens Nyheter article (in Swedish) October 18, 2023 – Towe Boström The hunt for semiconductors – this is how Sweden will secure the technology on which the whole of society is built) Paula Segura and David Dai show a wafer, the round disk of silicon carbide on which they apply gallium nitride epitaxial growth Link to Dagens Nyheter article (in Swedish) October 18, 2023 – Towe Boström The hunt for semiconductors – this is how Sweden will secure the technology on which the whole of society is built) Paula Segura and David Dai show a wafer, the round disk of silicon carbide on which they apply gallium nitride epitaxial solutions Link to Dagens Nyheter article (in Swedish) October 18, 2023 – Towe Boström The hunt for semiconductors – this is how Sweden will secure the technology on which the whole of society is built) Paula Segura and David Dai show a wafer, the round disk of silicon carbide on which they apply gallium nitride Transmorphic HeteroepitaxyLink to Dagens Nyheter article (in Swedish) October 18, 2023 – Towe Boström The hunt for semiconductors – this is how Sweden will secure the technology on which the whole of society is built) Paula Segura and David Dai show a wafer, the round disk of silicon carbide on which they apply gallium nitride GaN-on-SiC epitaxial solutionsThe hunt for semiconductors – this is how Sweden will secure the technology on which the whole of society is built) - [GaN-on-SiC semiconductor manufacturer SweGaN boosts executive team - appoints Henrik Tölander as COO](https://swegan.se/gan-on-sic-semiconductor-manufacturer-swegan-boosts-executive-team-appoints-henrik-tolander-as-coo/) - Linköping, Sweden, November 1, 2022: SweGaN AB, manufacturer of custom-made Gallium Nitride on Silicon Carbide (GaN-on-SiC) epitaxial wafers for an extensive range of devices used in telecom, satellite, defense, and power electronics, announces it has added a new role to its executive team. Newly appointed Chief Operating Officer, Henrik Tölander, joined SweGaN on October 31st. The new management role supports GaN HEMT epitaxial solution Linköping, Sweden, November 1, 2022: SweGaN AB, manufacturer of custom-made Gallium Nitride on Silicon Carbide (GaN-on-SiC) epitaxial wafers for an extensive range of devices used in telecom, satellite, defense, and power electronics, announces it has added a new role to its executive team. Newly appointed Chief Operating Officer, Henrik Tölander, joined SweGaN on October 31st. The new management role supports QuanFINE® epitaxial solutions Linköping, Sweden, November 1, 2022: SweGaN AB, manufacturer of custom-made Gallium Nitride on Silicon Carbide (GaN-on-SiC) epitaxial wafers for an extensive range of devices used in telecom, satellite, defense, and power electronics, announces it has added a new role to its executive team. Newly appointed Chief Operating Officer, Henrik Tölander, joined SweGaN on October 31st. The new management role supports GaN epitaxial solutions Linköping, Sweden, November 1, 2022: SweGaN AB, manufacturer of custom-made Gallium Nitride on Silicon Carbide (GaN-on-SiC) epitaxial wafers for an extensive range of devices used in telecom, satellite, defense, and power electronics, announces it has added a new role to its executive team. Newly appointed Chief Operating Officer, Henrik Tölander, joined SweGaN on October 31st. The new management role supports wide-bandgap semiconductors Linköping, Sweden, November 1, 2022: SweGaN AB, manufacturer of custom-made Gallium Nitride on Silicon Carbide (GaN-on-SiC) epitaxial wafers for an extensive range of devices used in telecom, satellite, defense, and power electronics, announces it has added a new role to its executive team. Newly appointed Chief Operating Officer, Henrik Tölander, joined SweGaN on October 31st. The new management role supports epitaxial growth Linköping, Sweden, November 1, 2022: SweGaN AB, manufacturer of custom-made Gallium Nitride on Silicon Carbide (GaN-on-SiC) epitaxial wafers for an extensive range of devices used in telecom, satellite, defense, and power electronics, announces it has added a new role to its executive team. Newly appointed Chief Operating Officer, Henrik Tölander, joined SweGaN on October 31st. The new management role supports epitaxial solutions Linköping, Sweden, November 1, 2022: SweGaN AB, manufacturer of custom-made Gallium Nitride on Silicon Carbide (GaN-on-SiC) epitaxial wafers for an extensive range of devices used in telecom, satellite, defense, and power electronics, announces it has added a new role to its executive team. Newly appointed Chief Operating Officer, Henrik Tölander, joined SweGaN on October 31st. The new management role supports Transmorphic HeteroepitaxyLinköping, Sweden, November 1, 2022: SweGaN AB, manufacturer of custom-made Gallium Nitride on Silicon Carbide (GaN-on-SiC) epitaxial wafers for an extensive range of devices used in telecom, satellite, defense, and power electronics, announces it has added a new role to its executive team. Newly appointed Chief Operating Officer, Henrik Tölander, joined SweGaN on October 31st. The new management role supports GaN-on-SiC epitaxial solutionsGaN-on-SiC semiconductor manufacturer SweGaN boosts executive team - appoints Henrik Tölander as COO. - [European compound semiconductor manufacturer SweGaN launches project for new headquarters and state-of-the-art wafer production facility](https://swegan.se/european-compound-semiconductor-manufacturer-swegan-launches-project-for-new-headquarters-and-state-of-the-art-wafer-production-facility/) - Linköping, Sweden, March 3rd, 2023: SweGaN AB, develops and manufactures custom-made Gallium Nitride on Silicon Carbide (GaN-on-SiC) epitaxial wafers to serve the world’s leading IDMs/Foundries, Fabless, system manufacturers, announces it is building a new headquarters including a state-of-the-art, high-capacity semiconductor production facility in Linköping, Sweden. The new facility will be built at the Innovative Materials Arena (IMA). GaN HEMT epitaxial solution Linköping, Sweden, March 3rd, 2023: SweGaN AB, develops and manufactures custom-made Gallium Nitride on Silicon Carbide (GaN-on-SiC) epitaxial wafers to serve the world’s leading IDMs/Foundries, Fabless, system manufacturers, announces it is building a new headquarters including a state-of-the-art, high-capacity semiconductor production facility in Linköping, Sweden. The new facility will be built at the Innovative Materials Arena (IMA). QuanFINE® epitaxial solutions Linköping, Sweden, March 3rd, 2023: SweGaN AB, develops and manufactures custom-made Gallium Nitride on Silicon Carbide (GaN-on-SiC) epitaxial wafers to serve the world’s leading IDMs/Foundries, Fabless, system manufacturers, announces it is building a new headquarters including a state-of-the-art, high-capacity semiconductor production facility in Linköping, Sweden. The new facility will be built at the Innovative Materials Arena (IMA). GaN epitaxial solutions Linköping, Sweden, March 3rd, 2023: SweGaN AB, develops and manufactures custom-made Gallium Nitride on Silicon Carbide (GaN-on-SiC) epitaxial wafers to serve the world’s leading IDMs/Foundries, Fabless, system manufacturers, announces it is building a new headquarters including a state-of-the-art, high-capacity semiconductor production facility in Linköping, Sweden. The new facility will be built at the Innovative Materials Arena (IMA). wide-bandgap semiconductors Linköping, Sweden, March 3rd, 2023: SweGaN AB, develops and manufactures custom-made Gallium Nitride on Silicon Carbide (GaN-on-SiC) epitaxial wafers to serve the world’s leading IDMs/Foundries, Fabless, system manufacturers, announces it is building a new headquarters including a state-of-the-art, high-capacity semiconductor production facility in Linköping, Sweden. The new facility will be built at the Innovative Materials Arena (IMA). epitaxial growth Linköping, Sweden, March 3rd, 2023: SweGaN AB, develops and manufactures custom-made Gallium Nitride on Silicon Carbide (GaN-on-SiC) epitaxial wafers to serve the world’s leading IDMs/Foundries, Fabless, system manufacturers, announces it is building a new headquarters including a state-of-the-art, high-capacity semiconductor production facility in Linköping, Sweden. The new facility will be built at the Innovative Materials Arena (IMA). epitaxial solutions Linköping, Sweden, March 3rd, 2023: SweGaN AB, develops and manufactures custom-made Gallium Nitride on Silicon Carbide (GaN-on-SiC) epitaxial wafers to serve the world’s leading IDMs/Foundries, Fabless, system manufacturers, announces it is building a new headquarters including a state-of-the-art, high-capacity semiconductor production facility in Linköping, Sweden. The new facility will be built at the Innovative Materials Arena (IMA). Transmorphic HeteroepitaxyLinköping, Sweden, March 3rd, 2023: SweGaN AB, develops and manufactures custom-made Gallium Nitride on Silicon Carbide (GaN-on-SiC) epitaxial wafers to serve the world’s leading IDMs/Foundries, Fabless, system manufacturers, announces it is building a new headquarters including a state-of-the-art, high-capacity semiconductor production facility in Linköping, Sweden. The new facility will be built at the Innovative Materials Arena (IMA). GaN-on-SiC epitaxial solutionsSweGaN launches project for new headquarters and state-of-the-art wafer production facility. - [A Buffer-Free Structure Boosts the Performance of GaN on SiC devices](https://swegan.se/a-buffer-free-structure-boosts-the-performance-of-gan-on-sic-devices/) - Link to article/interview in Power Electronics News April 27, 2023 Maurizio Di Paolo Emilio SweGaN has developed a novel design and an epitaxial process that eliminates the buffer layer in the GaN on SiC structure, improving device performance and reliability. In power electronics, GaN on SiC is a promising semiconductor material suitable for various applications. GaN HEMT epitaxial solution Link to article/interview in Power Electronics News April 27, 2023 Maurizio Di Paolo Emilio SweGaN has developed a novel design and an epitaxial process that eliminates the buffer layer in the GaN on SiC structure, improving device performance and reliability. In power electronics, GaN on SiC is a promising semiconductor material suitable for various applications. QuanFINE® epitaxial solutions Link to article/interview in Power Electronics News April 27, 2023 Maurizio Di Paolo Emilio SweGaN has developed a novel design and an epitaxial process that eliminates the buffer layer in the GaN on SiC structure, improving device performance and reliability. In power electronics, GaN on SiC is a promising semiconductor material suitable for various applications. GaN epitaxial solutions Link to article/interview in Power Electronics News April 27, 2023 Maurizio Di Paolo Emilio SweGaN has developed a novel design and an epitaxial process that eliminates the buffer layer in the GaN on SiC structure, improving device performance and reliability. In power electronics, GaN on SiC is a promising semiconductor material suitable for various applications. wide-bandgap semiconductors Link to article/interview in Power Electronics News April 27, 2023 Maurizio Di Paolo Emilio SweGaN has developed a novel design and an epitaxial process that eliminates the buffer layer in the GaN on SiC structure, improving device performance and reliability. In power electronics, GaN on SiC is a promising semiconductor material suitable for various applications. epitaxial growth Link to article/interview in Power Electronics News April 27, 2023 Maurizio Di Paolo Emilio SweGaN has developed a novel design and an epitaxial process that eliminates the buffer layer in the GaN on SiC structure, improving device performance and reliability. In power electronics, GaN on SiC is a promising semiconductor material suitable for various applications. epitaxial solutions Link to article/interview in Power Electronics News April 27, 2023 Maurizio Di Paolo Emilio SweGaN has developed a novel design and an epitaxial process that eliminates the buffer layer in the GaN on SiC structure, improving device performance and reliability. In power electronics, GaN on SiC is a promising semiconductor material suitable for various applications. Transmorphic HeteroepitaxyLink to article/interview in Power Electronics News April 27, 2023 Maurizio Di Paolo Emilio SweGaN has developed a novel design and an epitaxial process that eliminates the buffer layer in the GaN on SiC structure, improving device performance and reliability. In power electronics, GaN on SiC is a promising semiconductor material suitable for various applications. GaN-on-SiC epitaxial solutionsSweGaN has developed a novel design and an epitaxial process that eliminates the buffer layer in the GaN on SiC structure, improving device performance and reliability. - [SweGaN announces participation in ALL2GAN EU project](https://swegan.se/swegan-a-participant-in-all2gan-eu-project/) - SweGaN announces participation in ALL2GAN EU project Linköping, Sweden, May 24, 2023: SweGaN is excited to announce its participation in the ALL2GAN EU project focused on easily integrated energy-saving chips made of gallium nitride. -“In this groundbreaking project, SweGaN plans to further develop its proprietary QuanFINE, GaN on SiC materials, for D-mode and E-mode 1200V power devices GaN HEMT epitaxial solution SweGaN announces participation in ALL2GAN EU project Linköping, Sweden, May 24, 2023: SweGaN is excited to announce its participation in the ALL2GAN EU project focused on easily integrated energy-saving chips made of gallium nitride. -“In this groundbreaking project, SweGaN plans to further develop its proprietary QuanFINE, GaN on SiC materials, for D-mode and E-mode 1200V power devices QuanFINE® epitaxial solutions SweGaN announces participation in ALL2GAN EU project Linköping, Sweden, May 24, 2023: SweGaN is excited to announce its participation in the ALL2GAN EU project focused on easily integrated energy-saving chips made of gallium nitride. -“In this groundbreaking project, SweGaN plans to further develop its proprietary QuanFINE, GaN on SiC materials, for D-mode and E-mode 1200V power devices GaN epitaxial solutions SweGaN announces participation in ALL2GAN EU project Linköping, Sweden, May 24, 2023: SweGaN is excited to announce its participation in the ALL2GAN EU project focused on easily integrated energy-saving chips made of gallium nitride. -“In this groundbreaking project, SweGaN plans to further develop its proprietary QuanFINE, GaN on SiC materials, for D-mode and E-mode 1200V power devices wide-bandgap semiconductors SweGaN announces participation in ALL2GAN EU project Linköping, Sweden, May 24, 2023: SweGaN is excited to announce its participation in the ALL2GAN EU project focused on easily integrated energy-saving chips made of gallium nitride. -“In this groundbreaking project, SweGaN plans to further develop its proprietary QuanFINE, GaN on SiC materials, for D-mode and E-mode 1200V power devices epitaxial growth SweGaN announces participation in ALL2GAN EU project Linköping, Sweden, May 24, 2023: SweGaN is excited to announce its participation in the ALL2GAN EU project focused on easily integrated energy-saving chips made of gallium nitride. -“In this groundbreaking project, SweGaN plans to further develop its proprietary QuanFINE, GaN on SiC materials, for D-mode and E-mode 1200V power devices epitaxial solutions SweGaN announces participation in ALL2GAN EU project Linköping, Sweden, May 24, 2023: SweGaN is excited to announce its participation in the ALL2GAN EU project focused on easily integrated energy-saving chips made of gallium nitride. -“In this groundbreaking project, SweGaN plans to further develop its proprietary QuanFINE, GaN on SiC materials, for D-mode and E-mode 1200V power devices Transmorphic HeteroepitaxySweGaN announces participation in ALL2GAN EU project Linköping, Sweden, May 24, 2023: SweGaN is excited to announce its participation in the ALL2GAN EU project focused on easily integrated energy-saving chips made of gallium nitride. -“In this groundbreaking project, SweGaN plans to further develop its proprietary QuanFINE, GaN on SiC materials, for D-mode and E-mode 1200V power devices GaN-on-SiC epitaxial solutionsSweGaN announces participation in ALL2GAN EU project focused on easily integrated energy-saving chips made of gallium nitride. - [GaN-on-SiC semiconductor manufacturer SweGaN introduces telecom executive as Senior Advisor](https://swegan.se/gan-on-sic-semiconductor-manufacturer-swegan-introduces-telecom-executive-as-senior-advisor/) - Linköping, Sweden, August 30th, 2023: SweGaN AB, a European semiconductor manufacturer that develops and produces custom-made Gallium Nitride on Silicon Carbide (GaN-on-SiC) epitaxial wafers welcomes a Swedish telecom executive, Sven-Christer Nilsson, to join the company as a Senior Advisor. Nilsson is former CEO of Ericsson and is today active in leading tech companies as an investor and GaN HEMT epitaxial solution Linköping, Sweden, August 30th, 2023: SweGaN AB, a European semiconductor manufacturer that develops and produces custom-made Gallium Nitride on Silicon Carbide (GaN-on-SiC) epitaxial wafers welcomes a Swedish telecom executive, Sven-Christer Nilsson, to join the company as a Senior Advisor. Nilsson is former CEO of Ericsson and is today active in leading tech companies as an investor and QuanFINE® epitaxial solutions Linköping, Sweden, August 30th, 2023: SweGaN AB, a European semiconductor manufacturer that develops and produces custom-made Gallium Nitride on Silicon Carbide (GaN-on-SiC) epitaxial wafers welcomes a Swedish telecom executive, Sven-Christer Nilsson, to join the company as a Senior Advisor. Nilsson is former CEO of Ericsson and is today active in leading tech companies as an investor and GaN epitaxial solutions Linköping, Sweden, August 30th, 2023: SweGaN AB, a European semiconductor manufacturer that develops and produces custom-made Gallium Nitride on Silicon Carbide (GaN-on-SiC) epitaxial wafers welcomes a Swedish telecom executive, Sven-Christer Nilsson, to join the company as a Senior Advisor. Nilsson is former CEO of Ericsson and is today active in leading tech companies as an investor and wide-bandgap semiconductors Linköping, Sweden, August 30th, 2023: SweGaN AB, a European semiconductor manufacturer that develops and produces custom-made Gallium Nitride on Silicon Carbide (GaN-on-SiC) epitaxial wafers welcomes a Swedish telecom executive, Sven-Christer Nilsson, to join the company as a Senior Advisor. Nilsson is former CEO of Ericsson and is today active in leading tech companies as an investor and epitaxial growth Linköping, Sweden, August 30th, 2023: SweGaN AB, a European semiconductor manufacturer that develops and produces custom-made Gallium Nitride on Silicon Carbide (GaN-on-SiC) epitaxial wafers welcomes a Swedish telecom executive, Sven-Christer Nilsson, to join the company as a Senior Advisor. Nilsson is former CEO of Ericsson and is today active in leading tech companies as an investor and epitaxial solutions Linköping, Sweden, August 30th, 2023: SweGaN AB, a European semiconductor manufacturer that develops and produces custom-made Gallium Nitride on Silicon Carbide (GaN-on-SiC) epitaxial wafers welcomes a Swedish telecom executive, Sven-Christer Nilsson, to join the company as a Senior Advisor. Nilsson is former CEO of Ericsson and is today active in leading tech companies as an investor and Transmorphic HeteroepitaxyLinköping, Sweden, August 30th, 2023: SweGaN AB, a European semiconductor manufacturer that develops and produces custom-made Gallium Nitride on Silicon Carbide (GaN-on-SiC) epitaxial wafers welcomes a Swedish telecom executive, Sven-Christer Nilsson, to join the company as a Senior Advisor. Nilsson is former CEO of Ericsson and is today active in leading tech companies as an investor and GaN-on-SiC epitaxial solutionsGaN-on-SiC semiconductor manufacturer SweGaN introduces telecom executive as Senior Advisor. - [SweGaN boosts leadership – introduces new CFO and R&D Manager](https://swegan.se/swegan-boosts-leadership-introduces-new-cfo-and-rd-manager/) - Linköping, Sweden, January 16, 2024: SweGaN AB, a European semiconductor manufacturer that develops and produces custom-made Gallium Nitride on Silicon Carbide (GaN-on-SiC) epitaxial wafers, announces the introduction of CFO Stefan Axelsson, and R&D Manager Anders Lundskog. Axelsson will join the executive management team, and Lundskog has come on board in a new R&D role. Both joined SweGaN GaN HEMT epitaxial solution Linköping, Sweden, January 16, 2024: SweGaN AB, a European semiconductor manufacturer that develops and produces custom-made Gallium Nitride on Silicon Carbide (GaN-on-SiC) epitaxial wafers, announces the introduction of CFO Stefan Axelsson, and R&D Manager Anders Lundskog. Axelsson will join the executive management team, and Lundskog has come on board in a new R&D role. Both joined SweGaN QuanFINE® epitaxial solutions Linköping, Sweden, January 16, 2024: SweGaN AB, a European semiconductor manufacturer that develops and produces custom-made Gallium Nitride on Silicon Carbide (GaN-on-SiC) epitaxial wafers, announces the introduction of CFO Stefan Axelsson, and R&D Manager Anders Lundskog. Axelsson will join the executive management team, and Lundskog has come on board in a new R&D role. Both joined SweGaN GaN epitaxial solutions Linköping, Sweden, January 16, 2024: SweGaN AB, a European semiconductor manufacturer that develops and produces custom-made Gallium Nitride on Silicon Carbide (GaN-on-SiC) epitaxial wafers, announces the introduction of CFO Stefan Axelsson, and R&D Manager Anders Lundskog. Axelsson will join the executive management team, and Lundskog has come on board in a new R&D role. Both joined SweGaN wide-bandgap semiconductors Linköping, Sweden, January 16, 2024: SweGaN AB, a European semiconductor manufacturer that develops and produces custom-made Gallium Nitride on Silicon Carbide (GaN-on-SiC) epitaxial wafers, announces the introduction of CFO Stefan Axelsson, and R&D Manager Anders Lundskog. Axelsson will join the executive management team, and Lundskog has come on board in a new R&D role. Both joined SweGaN epitaxial growth Linköping, Sweden, January 16, 2024: SweGaN AB, a European semiconductor manufacturer that develops and produces custom-made Gallium Nitride on Silicon Carbide (GaN-on-SiC) epitaxial wafers, announces the introduction of CFO Stefan Axelsson, and R&D Manager Anders Lundskog. Axelsson will join the executive management team, and Lundskog has come on board in a new R&D role. Both joined SweGaN epitaxial solutions Linköping, Sweden, January 16, 2024: SweGaN AB, a European semiconductor manufacturer that develops and produces custom-made Gallium Nitride on Silicon Carbide (GaN-on-SiC) epitaxial wafers, announces the introduction of CFO Stefan Axelsson, and R&D Manager Anders Lundskog. Axelsson will join the executive management team, and Lundskog has come on board in a new R&D role. Both joined SweGaN Transmorphic HeteroepitaxyLinköping, Sweden, January 16, 2024: SweGaN AB, a European semiconductor manufacturer that develops and produces custom-made Gallium Nitride on Silicon Carbide (GaN-on-SiC) epitaxial wafers, announces the introduction of CFO Stefan Axelsson, and R&D Manager Anders Lundskog. Axelsson will join the executive management team, and Lundskog has come on board in a new R&D role. Both joined SweGaN GaN-on-SiC epitaxial solutionsSweGaN introduces CFO Stefan Axelsson and R&D Manager Anders Lundskog. Axelsson will join management team. - [NyTeknik.se: The super circuits for the green transition – why Sweden is at the forefront](https://swegan.se/nyteknik-se-the-super-circuits-for-the-green-transition-why-sweden-is-at-the-forefront-2/) - NyTeknik.se: The super circuits for the green transition – why Sweden is at the forefront Link to NyTekni Article (in Swedish): The super circles for the green transition – why Sweden is at the forefront (nyteknik.se) REPORTER: Charlotta von Schultz - 9 FEB 2023 AT 07.53 Jr-Tai Chen is the co-founder and CEO of Swegan, GaN HEMT epitaxial solution NyTeknik.se: The super circuits for the green transition – why Sweden is at the forefront Link to NyTekni Article (in Swedish): The super circles for the green transition – why Sweden is at the forefront (nyteknik.se) REPORTER: Charlotta von Schultz - 9 FEB 2023 AT 07.53 Jr-Tai Chen is the co-founder and CEO of Swegan, QuanFINE® epitaxial solutions NyTeknik.se: The super circuits for the green transition – why Sweden is at the forefront Link to NyTekni Article (in Swedish): The super circles for the green transition – why Sweden is at the forefront (nyteknik.se) REPORTER: Charlotta von Schultz - 9 FEB 2023 AT 07.53 Jr-Tai Chen is the co-founder and CEO of Swegan, GaN epitaxial solutions NyTeknik.se: The super circuits for the green transition – why Sweden is at the forefront Link to NyTekni Article (in Swedish): The super circles for the green transition – why Sweden is at the forefront (nyteknik.se) REPORTER: Charlotta von Schultz - 9 FEB 2023 AT 07.53 Jr-Tai Chen is the co-founder and CEO of Swegan, wide-bandgap semiconductors NyTeknik.se: The super circuits for the green transition – why Sweden is at the forefront Link to NyTekni Article (in Swedish): The super circles for the green transition – why Sweden is at the forefront (nyteknik.se) REPORTER: Charlotta von Schultz - 9 FEB 2023 AT 07.53 Jr-Tai Chen is the co-founder and CEO of Swegan, epitaxial growth NyTeknik.se: The super circuits for the green transition – why Sweden is at the forefront Link to NyTekni Article (in Swedish): The super circles for the green transition – why Sweden is at the forefront (nyteknik.se) REPORTER: Charlotta von Schultz - 9 FEB 2023 AT 07.53 Jr-Tai Chen is the co-founder and CEO of Swegan, epitaxial solutions NyTeknik.se: The super circuits for the green transition – why Sweden is at the forefront Link to NyTekni Article (in Swedish): The super circles for the green transition – why Sweden is at the forefront (nyteknik.se) REPORTER: Charlotta von Schultz - 9 FEB 2023 AT 07.53 Jr-Tai Chen is the co-founder and CEO of Swegan, Transmorphic HeteroepitaxyNyTeknik.se: The super circuits for the green transition – why Sweden is at the forefront Link to NyTekni Article (in Swedish): The super circles for the green transition – why Sweden is at the forefront (nyteknik.se) REPORTER: Charlotta von Schultz - 9 FEB 2023 AT 07.53 Jr-Tai Chen is the co-founder and CEO of Swegan, GaN-on-SiC epitaxial solutionsNyTeknik.se: The super circuits for the green transition – why Sweden is at the forefront Link to NyTekni Article (in Swedish): The super circles for the green transition – why Sweden is at the forefront (nyteknik.se) REPORTER: Charlotta von Schultz - 9 FEB 2023 AT 07.53 Jr-Tai Chen is the co-founder and CEO of Swegan, - [SweGaN CEO invited to speak at CS International, April 2024, Brussels](https://swegan.se/swegan-ceo-invited-to-speak-at-cs-international-april-2024-brussels/) - SweGaN CEO, Jr-Tai Chen, has been invited to speak at the annual CS International conference in Brussels, April 2024. Mr. Chen will speak in the Accelerating the Growth of GaN track. More details to come. CS International | Speakers GaN HEMT epitaxial solution SweGaN CEO, Jr-Tai Chen, has been invited to speak at the annual CS International conference in Brussels, April 2024. Mr. Chen will speak in the Accelerating the Growth of GaN track. More details to come. CS International | Speakers QuanFINE® epitaxial solutions SweGaN CEO, Jr-Tai Chen, has been invited to speak at the annual CS International conference in Brussels, April 2024. Mr. Chen will speak in the Accelerating the Growth of GaN track. More details to come. CS International | Speakers GaN epitaxial solutions SweGaN CEO, Jr-Tai Chen, has been invited to speak at the annual CS International conference in Brussels, April 2024. Mr. Chen will speak in the Accelerating the Growth of GaN track. More details to come. CS International | Speakers wide-bandgap semiconductors SweGaN CEO, Jr-Tai Chen, has been invited to speak at the annual CS International conference in Brussels, April 2024. Mr. Chen will speak in the Accelerating the Growth of GaN track. More details to come. CS International | Speakers epitaxial growth SweGaN CEO, Jr-Tai Chen, has been invited to speak at the annual CS International conference in Brussels, April 2024. Mr. Chen will speak in the Accelerating the Growth of GaN track. More details to come. CS International | Speakers epitaxial solutions SweGaN CEO, Jr-Tai Chen, has been invited to speak at the annual CS International conference in Brussels, April 2024. Mr. Chen will speak in the Accelerating the Growth of GaN track. More details to come. CS International | Speakers Transmorphic HeteroepitaxySweGaN CEO, Jr-Tai Chen, has been invited to speak at the annual CS International conference in Brussels, April 2024. Mr. Chen will speak in the Accelerating the Growth of GaN track. More details to come. CS International | Speakers GaN-on-SiC epitaxial solutionsDr. Jr-Tai Chen will speak in the Accelerating the Growth of GaN track at the CS Int'l conference, Brussels, April 2024. - [SSF mobility grant brings Linköping University professor Galia Pozina to 2-year GaN research collaboration with SweGaN](https://swegan.se/ssf-mobility-grant-brings-linkoping-university-professor-galia-pozina-to-2-year-gan-research-collaboration-with-swegan/) - – “Funded by a grant from the Swedish Foundation for Strategic Research, Linköping, we are pleased to share that University professor Galia Pozina will lead two year research project at SweGaN in a 50% position starting January 2024, confirms Jr-Tai Chen, CEO at SweGaN. Galia is a highly esteemed scientist within the gallium nitride community, with long and GaN HEMT epitaxial solution – “Funded by a grant from the Swedish Foundation for Strategic Research, Linköping, we are pleased to share that University professor Galia Pozina will lead two year research project at SweGaN in a 50% position starting January 2024, confirms Jr-Tai Chen, CEO at SweGaN. Galia is a highly esteemed scientist within the gallium nitride community, with long and QuanFINE® epitaxial solutions – “Funded by a grant from the Swedish Foundation for Strategic Research, Linköping, we are pleased to share that University professor Galia Pozina will lead two year research project at SweGaN in a 50% position starting January 2024, confirms Jr-Tai Chen, CEO at SweGaN. Galia is a highly esteemed scientist within the gallium nitride community, with long and GaN epitaxial solutions – “Funded by a grant from the Swedish Foundation for Strategic Research, Linköping, we are pleased to share that University professor Galia Pozina will lead two year research project at SweGaN in a 50% position starting January 2024, confirms Jr-Tai Chen, CEO at SweGaN. Galia is a highly esteemed scientist within the gallium nitride community, with long and wide-bandgap semiconductors – “Funded by a grant from the Swedish Foundation for Strategic Research, Linköping, we are pleased to share that University professor Galia Pozina will lead two year research project at SweGaN in a 50% position starting January 2024, confirms Jr-Tai Chen, CEO at SweGaN. Galia is a highly esteemed scientist within the gallium nitride community, with long and epitaxial growth – “Funded by a grant from the Swedish Foundation for Strategic Research, Linköping, we are pleased to share that University professor Galia Pozina will lead two year research project at SweGaN in a 50% position starting January 2024, confirms Jr-Tai Chen, CEO at SweGaN. Galia is a highly esteemed scientist within the gallium nitride community, with long and epitaxial solutions – “Funded by a grant from the Swedish Foundation for Strategic Research, Linköping, we are pleased to share that University professor Galia Pozina will lead two year research project at SweGaN in a 50% position starting January 2024, confirms Jr-Tai Chen, CEO at SweGaN. Galia is a highly esteemed scientist within the gallium nitride community, with long and Transmorphic Heteroepitaxy– “Funded by a grant from the Swedish Foundation for Strategic Research, Linköping, we are pleased to share that University professor Galia Pozina will lead two year research project at SweGaN in a 50% position starting January 2024, confirms Jr-Tai Chen, CEO at SweGaN. Galia is a highly esteemed scientist within the gallium nitride community, with long and GaN-on-SiC epitaxial solutionsGrant brings LiU professor Galia Pozina to 2-year GaN research collaboration with SweGaN. - [Semiconductor Today: SweGaN to build new HQ and GaN-on-SiC epiwafer production facility](https://swegan.se/semiconductor-today-swegan-to-build-new-hq-and-gan-on-sic-epiwafer-production-facility-2/) - SweGaN to build new HQ and GaN-on-SiC epiwafer production facility Link to article on Semiconductor Today SweGaN AB of Linköping, Sweden, which manufactures custom gallium nitride on silicon carbide (GaN-on-SiC) epitaxial wafers (based on a unique growth technology) for telecom, satellite, defense and power electronics applications, is to build a new headquarters including a high-capacity GaN HEMT epitaxial solution SweGaN to build new HQ and GaN-on-SiC epiwafer production facility Link to article on Semiconductor Today SweGaN AB of Linköping, Sweden, which manufactures custom gallium nitride on silicon carbide (GaN-on-SiC) epitaxial wafers (based on a unique growth technology) for telecom, satellite, defense and power electronics applications, is to build a new headquarters including a high-capacity QuanFINE® epitaxial solutions SweGaN to build new HQ and GaN-on-SiC epiwafer production facility Link to article on Semiconductor Today SweGaN AB of Linköping, Sweden, which manufactures custom gallium nitride on silicon carbide (GaN-on-SiC) epitaxial wafers (based on a unique growth technology) for telecom, satellite, defense and power electronics applications, is to build a new headquarters including a high-capacity GaN epitaxial solutions SweGaN to build new HQ and GaN-on-SiC epiwafer production facility Link to article on Semiconductor Today SweGaN AB of Linköping, Sweden, which manufactures custom gallium nitride on silicon carbide (GaN-on-SiC) epitaxial wafers (based on a unique growth technology) for telecom, satellite, defense and power electronics applications, is to build a new headquarters including a high-capacity wide-bandgap semiconductors SweGaN to build new HQ and GaN-on-SiC epiwafer production facility Link to article on Semiconductor Today SweGaN AB of Linköping, Sweden, which manufactures custom gallium nitride on silicon carbide (GaN-on-SiC) epitaxial wafers (based on a unique growth technology) for telecom, satellite, defense and power electronics applications, is to build a new headquarters including a high-capacity epitaxial growth SweGaN to build new HQ and GaN-on-SiC epiwafer production facility Link to article on Semiconductor Today SweGaN AB of Linköping, Sweden, which manufactures custom gallium nitride on silicon carbide (GaN-on-SiC) epitaxial wafers (based on a unique growth technology) for telecom, satellite, defense and power electronics applications, is to build a new headquarters including a high-capacity epitaxial solutions SweGaN to build new HQ and GaN-on-SiC epiwafer production facility Link to article on Semiconductor Today SweGaN AB of Linköping, Sweden, which manufactures custom gallium nitride on silicon carbide (GaN-on-SiC) epitaxial wafers (based on a unique growth technology) for telecom, satellite, defense and power electronics applications, is to build a new headquarters including a high-capacity Transmorphic HeteroepitaxySweGaN to build new HQ and GaN-on-SiC epiwafer production facility Link to article on Semiconductor Today SweGaN AB of Linköping, Sweden, which manufactures custom gallium nitride on silicon carbide (GaN-on-SiC) epitaxial wafers (based on a unique growth technology) for telecom, satellite, defense and power electronics applications, is to build a new headquarters including a high-capacity GaN-on-SiC epitaxial solutionsSweGaN to build new HQ and GaN-on-SiC epiwafer production facility Link to article on Semiconductor Today SweGaN AB of Linköping, Sweden, which manufactures custom gallium nitride on silicon carbide (GaN-on-SiC) epitaxial wafers (based on a unique growth technology) for telecom, satellite, defense and power electronics applications, is to build a new headquarters including a high-capacity - [Semiconductor Today: SweGaN to build new HQ and GaN-on-SiC epiwafer production facility](https://swegan.se/semiconductor-today-swegan-to-build-new-hq-and-gan-on-sic-epiwafer-production-facility/) - Link to article on Semiconductor Today SweGaN AB of Linköping, Sweden, which manufactures custom gallium nitride on silicon carbide (GaN-on-SiC) epitaxial wafers (based on a unique growth technology) for telecom, satellite, defense and power electronics applications, is to build a new headquarters including a high-capacity semiconductor production facility in Linköping. The new facility will be GaN HEMT epitaxial solution Link to article on Semiconductor Today SweGaN AB of Linköping, Sweden, which manufactures custom gallium nitride on silicon carbide (GaN-on-SiC) epitaxial wafers (based on a unique growth technology) for telecom, satellite, defense and power electronics applications, is to build a new headquarters including a high-capacity semiconductor production facility in Linköping. The new facility will be QuanFINE® epitaxial solutions Link to article on Semiconductor Today SweGaN AB of Linköping, Sweden, which manufactures custom gallium nitride on silicon carbide (GaN-on-SiC) epitaxial wafers (based on a unique growth technology) for telecom, satellite, defense and power electronics applications, is to build a new headquarters including a high-capacity semiconductor production facility in Linköping. The new facility will be GaN epitaxial solutions Link to article on Semiconductor Today SweGaN AB of Linköping, Sweden, which manufactures custom gallium nitride on silicon carbide (GaN-on-SiC) epitaxial wafers (based on a unique growth technology) for telecom, satellite, defense and power electronics applications, is to build a new headquarters including a high-capacity semiconductor production facility in Linköping. The new facility will be wide-bandgap semiconductors Link to article on Semiconductor Today SweGaN AB of Linköping, Sweden, which manufactures custom gallium nitride on silicon carbide (GaN-on-SiC) epitaxial wafers (based on a unique growth technology) for telecom, satellite, defense and power electronics applications, is to build a new headquarters including a high-capacity semiconductor production facility in Linköping. The new facility will be epitaxial growth Link to article on Semiconductor Today SweGaN AB of Linköping, Sweden, which manufactures custom gallium nitride on silicon carbide (GaN-on-SiC) epitaxial wafers (based on a unique growth technology) for telecom, satellite, defense and power electronics applications, is to build a new headquarters including a high-capacity semiconductor production facility in Linköping. The new facility will be epitaxial solutions Link to article on Semiconductor Today SweGaN AB of Linköping, Sweden, which manufactures custom gallium nitride on silicon carbide (GaN-on-SiC) epitaxial wafers (based on a unique growth technology) for telecom, satellite, defense and power electronics applications, is to build a new headquarters including a high-capacity semiconductor production facility in Linköping. The new facility will be Transmorphic HeteroepitaxyLink to article on Semiconductor Today SweGaN AB of Linköping, Sweden, which manufactures custom gallium nitride on silicon carbide (GaN-on-SiC) epitaxial wafers (based on a unique growth technology) for telecom, satellite, defense and power electronics applications, is to build a new headquarters including a high-capacity semiconductor production facility in Linköping. The new facility will be GaN-on-SiC epitaxial solutionsLink to article on Semiconductor Today SweGaN AB of Linköping, Sweden, which manufactures custom gallium nitride on silicon carbide (GaN-on-SiC) epitaxial wafers (based on a unique growth technology) for telecom, satellite, defense and power electronics applications, is to build a new headquarters including a high-capacity semiconductor production facility in Linköping. The new facility will be - [Compound Semiconductor: "Former Ericsson CEO becomes senior advisor to SweGaN"](https://swegan.se/compound-semiconductor-former-ericsson-ceo-becomes-senior-advisor-to-swegan/) - Compound Semiconductor: "Former Ericsson CEO becomes senior advisor to SweGaN" Link to Compound Semiconductor article Sven-Christer Nilsson appointment linked to growing demand for GaN-on-SiC epiwafers in 5G telecoms, satcoms and EVs SweGaN AB, a European maker of GaN-on-SiC epiwafer, has welcomed Sven-Christer Nilsson, former CEO of telecoms giant Ericsson, to join the company as a GaN HEMT epitaxial solution Compound Semiconductor: "Former Ericsson CEO becomes senior advisor to SweGaN" Link to Compound Semiconductor article Sven-Christer Nilsson appointment linked to growing demand for GaN-on-SiC epiwafers in 5G telecoms, satcoms and EVs SweGaN AB, a European maker of GaN-on-SiC epiwafer, has welcomed Sven-Christer Nilsson, former CEO of telecoms giant Ericsson, to join the company as a QuanFINE® epitaxial solutions Compound Semiconductor: "Former Ericsson CEO becomes senior advisor to SweGaN" Link to Compound Semiconductor article Sven-Christer Nilsson appointment linked to growing demand for GaN-on-SiC epiwafers in 5G telecoms, satcoms and EVs SweGaN AB, a European maker of GaN-on-SiC epiwafer, has welcomed Sven-Christer Nilsson, former CEO of telecoms giant Ericsson, to join the company as a GaN epitaxial solutions Compound Semiconductor: "Former Ericsson CEO becomes senior advisor to SweGaN" Link to Compound Semiconductor article Sven-Christer Nilsson appointment linked to growing demand for GaN-on-SiC epiwafers in 5G telecoms, satcoms and EVs SweGaN AB, a European maker of GaN-on-SiC epiwafer, has welcomed Sven-Christer Nilsson, former CEO of telecoms giant Ericsson, to join the company as a wide-bandgap semiconductors Compound Semiconductor: "Former Ericsson CEO becomes senior advisor to SweGaN" Link to Compound Semiconductor article Sven-Christer Nilsson appointment linked to growing demand for GaN-on-SiC epiwafers in 5G telecoms, satcoms and EVs SweGaN AB, a European maker of GaN-on-SiC epiwafer, has welcomed Sven-Christer Nilsson, former CEO of telecoms giant Ericsson, to join the company as a epitaxial growth Compound Semiconductor: "Former Ericsson CEO becomes senior advisor to SweGaN" Link to Compound Semiconductor article Sven-Christer Nilsson appointment linked to growing demand for GaN-on-SiC epiwafers in 5G telecoms, satcoms and EVs SweGaN AB, a European maker of GaN-on-SiC epiwafer, has welcomed Sven-Christer Nilsson, former CEO of telecoms giant Ericsson, to join the company as a epitaxial solutions Compound Semiconductor: "Former Ericsson CEO becomes senior advisor to SweGaN" Link to Compound Semiconductor article Sven-Christer Nilsson appointment linked to growing demand for GaN-on-SiC epiwafers in 5G telecoms, satcoms and EVs SweGaN AB, a European maker of GaN-on-SiC epiwafer, has welcomed Sven-Christer Nilsson, former CEO of telecoms giant Ericsson, to join the company as a Transmorphic HeteroepitaxyCompound Semiconductor: "Former Ericsson CEO becomes senior advisor to SweGaN" Link to Compound Semiconductor article Sven-Christer Nilsson appointment linked to growing demand for GaN-on-SiC epiwafers in 5G telecoms, satcoms and EVs SweGaN AB, a European maker of GaN-on-SiC epiwafer, has welcomed Sven-Christer Nilsson, former CEO of telecoms giant Ericsson, to join the company as a GaN-on-SiC epitaxial solutionsCompound Semiconductor: "Former Ericsson CEO becomes senior advisor to SweGaN" Link to Compound Semiconductor article Sven-Christer Nilsson appointment linked to growing demand for GaN-on-SiC epiwafers in 5G telecoms, satcoms and EVs SweGaN AB, a European maker of GaN-on-SiC epiwafer, has welcomed Sven-Christer Nilsson, former CEO of telecoms giant Ericsson, to join the company as a - [Microwave Journal: SweGaN Brings its GaN-on-SiC Epitaxial Solutions to Joint ESA Project](https://swegan.se/swegan-brings-its-gan-on-sic-epitaxial-solutions-to-joint-esa-project/) - March 25, 2021 / Link to Microwave Journal article SweGaN AB, manufacturer of custom-made GaN-on-SiC epitaxial wafers for components and devices for telecom, satellite, defense and power electronics, announced it is partnering with Ferdinand-Braun-Institut (FBH) and University of Bristol in a European Space Agency (ESA) project “Kassiopeia” that includes a focus on SweGaN’s QuanFINE® GaN-on-SiC epitaxial materials to help boost the GaN HEMT epitaxial solution March 25, 2021 / Link to Microwave Journal article SweGaN AB, manufacturer of custom-made GaN-on-SiC epitaxial wafers for components and devices for telecom, satellite, defense and power electronics, announced it is partnering with Ferdinand-Braun-Institut (FBH) and University of Bristol in a European Space Agency (ESA) project “Kassiopeia” that includes a focus on SweGaN’s QuanFINE® GaN-on-SiC epitaxial materials to help boost the QuanFINE® epitaxial solutions March 25, 2021 / Link to Microwave Journal article SweGaN AB, manufacturer of custom-made GaN-on-SiC epitaxial wafers for components and devices for telecom, satellite, defense and power electronics, announced it is partnering with Ferdinand-Braun-Institut (FBH) and University of Bristol in a European Space Agency (ESA) project “Kassiopeia” that includes a focus on SweGaN’s QuanFINE® GaN-on-SiC epitaxial materials to help boost the GaN epitaxial solutions March 25, 2021 / Link to Microwave Journal article SweGaN AB, manufacturer of custom-made GaN-on-SiC epitaxial wafers for components and devices for telecom, satellite, defense and power electronics, announced it is partnering with Ferdinand-Braun-Institut (FBH) and University of Bristol in a European Space Agency (ESA) project “Kassiopeia” that includes a focus on SweGaN’s QuanFINE® GaN-on-SiC epitaxial materials to help boost the wide-bandgap semiconductors March 25, 2021 / Link to Microwave Journal article SweGaN AB, manufacturer of custom-made GaN-on-SiC epitaxial wafers for components and devices for telecom, satellite, defense and power electronics, announced it is partnering with Ferdinand-Braun-Institut (FBH) and University of Bristol in a European Space Agency (ESA) project “Kassiopeia” that includes a focus on SweGaN’s QuanFINE® GaN-on-SiC epitaxial materials to help boost the epitaxial growth March 25, 2021 / Link to Microwave Journal article SweGaN AB, manufacturer of custom-made GaN-on-SiC epitaxial wafers for components and devices for telecom, satellite, defense and power electronics, announced it is partnering with Ferdinand-Braun-Institut (FBH) and University of Bristol in a European Space Agency (ESA) project “Kassiopeia” that includes a focus on SweGaN’s QuanFINE® GaN-on-SiC epitaxial materials to help boost the epitaxial solutions March 25, 2021 / Link to Microwave Journal article SweGaN AB, manufacturer of custom-made GaN-on-SiC epitaxial wafers for components and devices for telecom, satellite, defense and power electronics, announced it is partnering with Ferdinand-Braun-Institut (FBH) and University of Bristol in a European Space Agency (ESA) project “Kassiopeia” that includes a focus on SweGaN’s QuanFINE® GaN-on-SiC epitaxial materials to help boost the Transmorphic HeteroepitaxyMarch 25, 2021 / Link to Microwave Journal article SweGaN AB, manufacturer of custom-made GaN-on-SiC epitaxial wafers for components and devices for telecom, satellite, defense and power electronics, announced it is partnering with Ferdinand-Braun-Institut (FBH) and University of Bristol in a European Space Agency (ESA) project “Kassiopeia” that includes a focus on SweGaN’s QuanFINE® GaN-on-SiC epitaxial materials to help boost the GaN-on-SiC epitaxial solutionsMarch 25, 2021 / Link to Microwave Journal article SweGaN AB, manufacturer of custom-made GaN-on-SiC epitaxial wafers for components and devices for telecom, satellite, defense and power electronics, announced it is partnering with Ferdinand-Braun-Institut (FBH) and University of Bristol in a European Space Agency (ESA) project “Kassiopeia” that includes a focus on SweGaN’s QuanFINE® GaN-on-SiC epitaxial materials to help boost the - [Compound Semiconductor: Swedish maker of GaN-on-SiC epitaxial wafers to significantly boost capacity with latest funding round](https://swegan.se/compound-semiconductor-swedish-maker-of-gan-on-sic-epitaxial-wafers-to-significantly-boost-capacity-with-latest-funding-round/) - Tuesday 4th October 2022 – Link to article Swedish maker of GaN-on-SiC epitaxial wafers to significantly boost capacity with latest funding round SweGaN, a Sweden-based maker of GaN-on-SiC epitaxial wafers has completed a Series A financing round totaling 1€12m. The financing was co-led by Intertech Ventures, Mount Wilson Ventures and leading European investor Atlantic Bridge, GaN HEMT epitaxial solution Tuesday 4th October 2022 – Link to article Swedish maker of GaN-on-SiC epitaxial wafers to significantly boost capacity with latest funding round SweGaN, a Sweden-based maker of GaN-on-SiC epitaxial wafers has completed a Series A financing round totaling 1€12m. The financing was co-led by Intertech Ventures, Mount Wilson Ventures and leading European investor Atlantic Bridge, QuanFINE® epitaxial solutions Tuesday 4th October 2022 – Link to article Swedish maker of GaN-on-SiC epitaxial wafers to significantly boost capacity with latest funding round SweGaN, a Sweden-based maker of GaN-on-SiC epitaxial wafers has completed a Series A financing round totaling 1€12m. The financing was co-led by Intertech Ventures, Mount Wilson Ventures and leading European investor Atlantic Bridge, GaN epitaxial solutions Tuesday 4th October 2022 – Link to article Swedish maker of GaN-on-SiC epitaxial wafers to significantly boost capacity with latest funding round SweGaN, a Sweden-based maker of GaN-on-SiC epitaxial wafers has completed a Series A financing round totaling 1€12m. The financing was co-led by Intertech Ventures, Mount Wilson Ventures and leading European investor Atlantic Bridge, wide-bandgap semiconductors Tuesday 4th October 2022 – Link to article Swedish maker of GaN-on-SiC epitaxial wafers to significantly boost capacity with latest funding round SweGaN, a Sweden-based maker of GaN-on-SiC epitaxial wafers has completed a Series A financing round totaling 1€12m. The financing was co-led by Intertech Ventures, Mount Wilson Ventures and leading European investor Atlantic Bridge, epitaxial growth Tuesday 4th October 2022 – Link to article Swedish maker of GaN-on-SiC epitaxial wafers to significantly boost capacity with latest funding round SweGaN, a Sweden-based maker of GaN-on-SiC epitaxial wafers has completed a Series A financing round totaling 1€12m. The financing was co-led by Intertech Ventures, Mount Wilson Ventures and leading European investor Atlantic Bridge, epitaxial solutions Tuesday 4th October 2022 – Link to article Swedish maker of GaN-on-SiC epitaxial wafers to significantly boost capacity with latest funding round SweGaN, a Sweden-based maker of GaN-on-SiC epitaxial wafers has completed a Series A financing round totaling 1€12m. The financing was co-led by Intertech Ventures, Mount Wilson Ventures and leading European investor Atlantic Bridge, Transmorphic HeteroepitaxyTuesday 4th October 2022 – Link to article Swedish maker of GaN-on-SiC epitaxial wafers to significantly boost capacity with latest funding round SweGaN, a Sweden-based maker of GaN-on-SiC epitaxial wafers has completed a Series A financing round totaling 1€12m. The financing was co-led by Intertech Ventures, Mount Wilson Ventures and leading European investor Atlantic Bridge, GaN-on-SiC epitaxial solutionsTuesday 4th October 2022 – Link to article Swedish maker of GaN-on-SiC epitaxial wafers to significantly boost capacity with latest funding round SweGaN, a Sweden-based maker of GaN-on-SiC epitaxial wafers has completed a Series A financing round totaling 1€12m. The financing was co-led by Intertech Ventures, Mount Wilson Ventures and leading European investor Atlantic Bridge, - [Semiconductor today: SweGaN gains former Ericsson CEO as senior advisor](https://swegan.se/semiconductor-today-swegan-gains-former-ericsson-ceo-as-senior-advisor/) - Link to Semiconductor Today artice / August 30, 2023SweGaN AB of Linköping, Sweden, which develops and manufactures custom gallium nitride on silicon carbide (GaN-on-SiC) epitaxial wafers (based on a unique growth technology) for telecom, satellite communications, defense and power electronics applications, says that former Ericsson CEO Sven-Christer Nilsson – who is an investor and board GaN HEMT epitaxial solution Link to Semiconductor Today artice / August 30, 2023SweGaN AB of Linköping, Sweden, which develops and manufactures custom gallium nitride on silicon carbide (GaN-on-SiC) epitaxial wafers (based on a unique growth technology) for telecom, satellite communications, defense and power electronics applications, says that former Ericsson CEO Sven-Christer Nilsson – who is an investor and board QuanFINE® epitaxial solutions Link to Semiconductor Today artice / August 30, 2023SweGaN AB of Linköping, Sweden, which develops and manufactures custom gallium nitride on silicon carbide (GaN-on-SiC) epitaxial wafers (based on a unique growth technology) for telecom, satellite communications, defense and power electronics applications, says that former Ericsson CEO Sven-Christer Nilsson – who is an investor and board GaN epitaxial solutions Link to Semiconductor Today artice / August 30, 2023SweGaN AB of Linköping, Sweden, which develops and manufactures custom gallium nitride on silicon carbide (GaN-on-SiC) epitaxial wafers (based on a unique growth technology) for telecom, satellite communications, defense and power electronics applications, says that former Ericsson CEO Sven-Christer Nilsson – who is an investor and board wide-bandgap semiconductors Link to Semiconductor Today artice / August 30, 2023SweGaN AB of Linköping, Sweden, which develops and manufactures custom gallium nitride on silicon carbide (GaN-on-SiC) epitaxial wafers (based on a unique growth technology) for telecom, satellite communications, defense and power electronics applications, says that former Ericsson CEO Sven-Christer Nilsson – who is an investor and board epitaxial growth Link to Semiconductor Today artice / August 30, 2023SweGaN AB of Linköping, Sweden, which develops and manufactures custom gallium nitride on silicon carbide (GaN-on-SiC) epitaxial wafers (based on a unique growth technology) for telecom, satellite communications, defense and power electronics applications, says that former Ericsson CEO Sven-Christer Nilsson – who is an investor and board epitaxial solutions Link to Semiconductor Today artice / August 30, 2023SweGaN AB of Linköping, Sweden, which develops and manufactures custom gallium nitride on silicon carbide (GaN-on-SiC) epitaxial wafers (based on a unique growth technology) for telecom, satellite communications, defense and power electronics applications, says that former Ericsson CEO Sven-Christer Nilsson – who is an investor and board Transmorphic HeteroepitaxyLink to Semiconductor Today artice / August 30, 2023SweGaN AB of Linköping, Sweden, which develops and manufactures custom gallium nitride on silicon carbide (GaN-on-SiC) epitaxial wafers (based on a unique growth technology) for telecom, satellite communications, defense and power electronics applications, says that former Ericsson CEO Sven-Christer Nilsson – who is an investor and board GaN-on-SiC epitaxial solutionsLink to Semiconductor Today artice / August 30, 2023SweGaN AB of Linköping, Sweden, which develops and manufactures custom gallium nitride on silicon carbide (GaN-on-SiC) epitaxial wafers (based on a unique growth technology) for telecom, satellite communications, defense and power electronics applications, says that former Ericsson CEO Sven-Christer Nilsson – who is an investor and board - [Electronics Media: SweGaN and Chalmers University of Technology & SweGaN AB, manufacturer of custom-made GaN-on-SiC epitaxial wafers](https://swegan.se/swegan-and-chalmers-university-demonstrate-high-voltage-gan-power-devices-with-a-high-breakdown-voltage-of-1600v-and-low-leakage-current-of-22na-mm-on-quanfine-epitaxial-solutions/) - Chalmers University of Technology and SweGaN AB, manufacturer of custom-made GaN-on-SiC epitaxial wafers for the devices used in telecom, satellite, defense, and power electronics, announce a publication in Electron Device Letters, demonstrating new state-of-the-art results of high-voltage GaN power devices enabled by Chalmers MIS-HEMT technology and SweGaN QuanFINE buffer-free GaN-on-SiC materials. Among key findings, the research identifies QuanFINE epiwafers as a highly GaN HEMT epitaxial solution Chalmers University of Technology and SweGaN AB, manufacturer of custom-made GaN-on-SiC epitaxial wafers for the devices used in telecom, satellite, defense, and power electronics, announce a publication in Electron Device Letters, demonstrating new state-of-the-art results of high-voltage GaN power devices enabled by Chalmers MIS-HEMT technology and SweGaN QuanFINE buffer-free GaN-on-SiC materials. Among key findings, the research identifies QuanFINE epiwafers as a highly QuanFINE® epitaxial solutions Chalmers University of Technology and SweGaN AB, manufacturer of custom-made GaN-on-SiC epitaxial wafers for the devices used in telecom, satellite, defense, and power electronics, announce a publication in Electron Device Letters, demonstrating new state-of-the-art results of high-voltage GaN power devices enabled by Chalmers MIS-HEMT technology and SweGaN QuanFINE buffer-free GaN-on-SiC materials. Among key findings, the research identifies QuanFINE epiwafers as a highly GaN epitaxial solutions Chalmers University of Technology and SweGaN AB, manufacturer of custom-made GaN-on-SiC epitaxial wafers for the devices used in telecom, satellite, defense, and power electronics, announce a publication in Electron Device Letters, demonstrating new state-of-the-art results of high-voltage GaN power devices enabled by Chalmers MIS-HEMT technology and SweGaN QuanFINE buffer-free GaN-on-SiC materials. Among key findings, the research identifies QuanFINE epiwafers as a highly wide-bandgap semiconductors Chalmers University of Technology and SweGaN AB, manufacturer of custom-made GaN-on-SiC epitaxial wafers for the devices used in telecom, satellite, defense, and power electronics, announce a publication in Electron Device Letters, demonstrating new state-of-the-art results of high-voltage GaN power devices enabled by Chalmers MIS-HEMT technology and SweGaN QuanFINE buffer-free GaN-on-SiC materials. Among key findings, the research identifies QuanFINE epiwafers as a highly epitaxial growth Chalmers University of Technology and SweGaN AB, manufacturer of custom-made GaN-on-SiC epitaxial wafers for the devices used in telecom, satellite, defense, and power electronics, announce a publication in Electron Device Letters, demonstrating new state-of-the-art results of high-voltage GaN power devices enabled by Chalmers MIS-HEMT technology and SweGaN QuanFINE buffer-free GaN-on-SiC materials. Among key findings, the research identifies QuanFINE epiwafers as a highly epitaxial solutions Chalmers University of Technology and SweGaN AB, manufacturer of custom-made GaN-on-SiC epitaxial wafers for the devices used in telecom, satellite, defense, and power electronics, announce a publication in Electron Device Letters, demonstrating new state-of-the-art results of high-voltage GaN power devices enabled by Chalmers MIS-HEMT technology and SweGaN QuanFINE buffer-free GaN-on-SiC materials. Among key findings, the research identifies QuanFINE epiwafers as a highly Transmorphic HeteroepitaxyChalmers University of Technology and SweGaN AB, manufacturer of custom-made GaN-on-SiC epitaxial wafers for the devices used in telecom, satellite, defense, and power electronics, announce a publication in Electron Device Letters, demonstrating new state-of-the-art results of high-voltage GaN power devices enabled by Chalmers MIS-HEMT technology and SweGaN QuanFINE buffer-free GaN-on-SiC materials. Among key findings, the research identifies QuanFINE epiwafers as a highly GaN-on-SiC epitaxial solutionsChalmers University of Technology and SweGaN AB, manufacturer of custom-made GaN-on-SiC epitaxial wafers for the devices used in telecom, satellite, defense, and power electronics, announce a publication in Electron Device Letters, demonstrating new state-of-the-art results of high-voltage GaN power devices enabled by Chalmers MIS-HEMT technology and SweGaN QuanFINE buffer-free GaN-on-SiC materials. Among key findings, the research identifies QuanFINE epiwafers as a highly - [NyTeknik.se: The super circuits for the green transition – why Sweden is at the forefront](https://swegan.se/nyteknik-se-the-super-circuits-for-the-green-transition-why-sweden-is-at-the-forefront/) - Link to NyTekni Article (in Swedish): The super circles for the green transition – why Sweden is at the forefront (nyteknik.se) REPORTER: Charlotta von Schultz – 9 FEB 2023 AT 07.53 Jr-Tai Chen is the co-founder and CEO of Swegan, the Linköping company that is now building a factory to manufacture gallium nitride semiconductor materials. Electric GaN HEMT epitaxial solution Link to NyTekni Article (in Swedish): The super circles for the green transition – why Sweden is at the forefront (nyteknik.se) REPORTER: Charlotta von Schultz – 9 FEB 2023 AT 07.53 Jr-Tai Chen is the co-founder and CEO of Swegan, the Linköping company that is now building a factory to manufacture gallium nitride semiconductor materials. Electric QuanFINE® epitaxial solutions Link to NyTekni Article (in Swedish): The super circles for the green transition – why Sweden is at the forefront (nyteknik.se) REPORTER: Charlotta von Schultz – 9 FEB 2023 AT 07.53 Jr-Tai Chen is the co-founder and CEO of Swegan, the Linköping company that is now building a factory to manufacture gallium nitride semiconductor materials. Electric GaN epitaxial solutions Link to NyTekni Article (in Swedish): The super circles for the green transition – why Sweden is at the forefront (nyteknik.se) REPORTER: Charlotta von Schultz – 9 FEB 2023 AT 07.53 Jr-Tai Chen is the co-founder and CEO of Swegan, the Linköping company that is now building a factory to manufacture gallium nitride semiconductor materials. Electric wide-bandgap semiconductors Link to NyTekni Article (in Swedish): The super circles for the green transition – why Sweden is at the forefront (nyteknik.se) REPORTER: Charlotta von Schultz – 9 FEB 2023 AT 07.53 Jr-Tai Chen is the co-founder and CEO of Swegan, the Linköping company that is now building a factory to manufacture gallium nitride semiconductor materials. Electric epitaxial growth Link to NyTekni Article (in Swedish): The super circles for the green transition – why Sweden is at the forefront (nyteknik.se) REPORTER: Charlotta von Schultz – 9 FEB 2023 AT 07.53 Jr-Tai Chen is the co-founder and CEO of Swegan, the Linköping company that is now building a factory to manufacture gallium nitride semiconductor materials. Electric epitaxial solutions Link to NyTekni Article (in Swedish): The super circles for the green transition – why Sweden is at the forefront (nyteknik.se) REPORTER: Charlotta von Schultz – 9 FEB 2023 AT 07.53 Jr-Tai Chen is the co-founder and CEO of Swegan, the Linköping company that is now building a factory to manufacture gallium nitride semiconductor materials. Electric Transmorphic HeteroepitaxyLink to NyTekni Article (in Swedish): The super circles for the green transition – why Sweden is at the forefront (nyteknik.se) REPORTER: Charlotta von Schultz – 9 FEB 2023 AT 07.53 Jr-Tai Chen is the co-founder and CEO of Swegan, the Linköping company that is now building a factory to manufacture gallium nitride semiconductor materials. Electric GaN-on-SiC epitaxial solutionsLink to NyTekni Article (in Swedish): The super circles for the green transition – why Sweden is at the forefront (nyteknik.se) REPORTER: Charlotta von Schultz – 9 FEB 2023 AT 07.53 Jr-Tai Chen is the co-founder and CEO of Swegan, the Linköping company that is now building a factory to manufacture gallium nitride semiconductor materials. Electric ## Pages - [Home](https://swegan.se/) - SweGaN is a European semiconductor company specializing in custom GaN-on-SiC epitaxial wafers, powered by our proprietary QuanFINE® technology. - [Technology](https://swegan.se/technology/) - SweGaN excels in III-nitride epitaxial growth, mastering interface engineering, layer development, and structure design with advanced epitaxy technologies. - [SweGan In Brief](https://swegan.se/swegan-in-brief/) - We harness GaN’s power to unlock its full potential, empowering customers to innovate next-generation high-power, high-frequency semiconductor devices. - [Management Team](https://swegan.se/meet-our-management-team/) - Meet the leaders who drive our vision forward. Our management team brings together diverse expertise, innovative thinking, and a shared commitment to excellence. - [News & Press releases](https://swegan.se/news/) - Stay tuned for the latest news and press releases with insights, announcements, and stories that shape our journey. - [Services](https://swegan.se/services/) - We provide services that help partners innovate and pioneer next-generation high-power, high-frequency semiconductor devices for diverse applications - [Events](https://swegan.se/events/) - Events Explore our latest industry events, conferences, and trade fairs showcasing innovations in semiconductor materials and global collaboration opportunities. National Roundtable on Semiconductor Strategy October 9, 2025 SweGaN joins a roundtable discussion on Building Sweden's National Semiconductor Strategy on 10th October. European Microwave Week 2025 September 29, 2025 SweGaN was pleased to attend EuMW2025 in - [Tailored Epi on Demand](https://swegan.se/tailored-epi-on-demand/) - Tailored epitaxial solutions allow customers to design and customize epitaxial solutions, based on individual technical requirements. - [Privacy Policy](https://swegan.se/privacy-policy/) - Learn how we collect, use, and protect your personal information to ensure transparency and safeguard your privacy. - [Media Library](https://swegan.se/media-library/) - Explore our official media library for high-quality images showcasing our brand, products, people, and facilities. - [Company Policy](https://swegan.se/company-policy/) - Our vision is to continuously improve our products and services, enabling our customers to position and flourish in the future. - [Applications](https://swegan.se/application/) - SweGaN develops high-performance GaN-on-SiC epitaxial solutions for RF and power devices, enabling efficient, compact, and cost-effective applications. - [Contact](https://swegan.se/contact/) - Contact us to learn how SweGaN’s benchmark GaN-on-SiC epiwafers enhance device performance in various applications and industries. - [Career](https://swegan.se/career/) - SweGaN is seeking innovative thinkers and problem solvers with passion and grit to make a difference for our global portfolio of world-renowned customers. - [Board of Directors](https://swegan.se/board-of-directors/) - SweGaN’s Board is based on a powerful global network of renowned tech and semiconductor investors from the US, Taiwan, and Europe with deep industry knowledge. ## My Templates - [Post list - WT](https://swegan.se/?elementor_library=post-list-wt) - October 15, 2025 Post list – WT - [jobs loop ... template](https://swegan.se/?elementor_library=jobs-loop-template) - Recruiting jobs loop … template Read more - [Default Kit](https://swegan.se/?elementor_library=default-kit) - [single post ... Template](https://swegan.se/?elementor_library=single-post-template) - Epiwafers Technology Tailored Solutions On Demand Partner Services Applications News News & Press releases Events Media Library About SweGaN In Brief Management Team Board Of Directors Career Contact Epiwafers Technology Tailored Solutions On Demand Partner Services Applications News News & Press releases Events Media Library About SweGaN In Brief Management Team Board Of Directors Career - [New Post Template](https://swegan.se/?elementor_library=new-post-template) - New Post Template November 26, 2023 - [job single page ... Template](https://swegan.se/?elementor_library=job-single-page-template) - job single page … Template May 14, 2024 In 2025, global macroeconomic uncertainty affected many industries. In this challenging environment, SweGaN has focused on resilience over rapid growth. We have invested in strategic initiatives essential for long-term success, even though the impact will unfold over time. These deliberate actions position us to seize future opportunities. - [New Header Template](https://swegan.se/?elementor_library=new-header-template) - Content area - [New Footer Template](https://swegan.se/?elementor_library=new-footer-template) - Content area - [single post swegan](https://swegan.se/?elementor_library=single-post-swegan) - December 31, 2024 single post swegan In 2025, global macroeconomic uncertainty affected many industries. In this challenging environment, SweGaN has focused on resilience over rapid growth. We have invested in strategic initiatives essential for long-term success, even though the impact will unfold over time. These deliberate actions position us to seize future opportunities. Despite the - [search page ... Template](https://swegan.se/?elementor_library=search-page-template) - Template: search page … Template Head of Sales February 23, 2026 Produktionstekniker February 23, 2026 Sales Assistant February 20, 2026 Wrapping up 2025: Navigating in a challenging year December 19, 2025 In 2025, SweGaN focused on resilience, investing in long-term strategies to build a strong foundation for sustainable growth National Roundtable on Semiconductor Strategy October 9, - [Header](https://swegan.se/?elementor_library=header) - Content area - [(W) Job post loop](https://swegan.se/?elementor_library=elementor-loop-item-8634) - Recruiting (W) Job post loop Apply - [job loop gird ... Template](https://swegan.se/?elementor_library=job-loop-gird-template) - job loop gird … Template read more - [in the media loop ... Template](https://swegan.se/?elementor_library=in-the-media-loop-template) - in the media loop … Template - [event loop ... Template](https://swegan.se/?elementor_library=event-loop-template) - event loop … Template - [Image box](https://swegan.se/?elementor_library=image-box) - Satellite CommunicationEnabling devices to face extreme conditions in space Empowering devices to withstand the harsh conditions of space, satellites depend on robust semiconductors for communication, navigation, and earth observation. In such unforgiving environments where maintenance operations are exceptionally challenging. SweGaN’s benchmark GaN materials enable semiconductor devices with longer lifetimes and lower power consumption, thanks to our - [Post Loop](https://swegan.se/?elementor_library=post-loop) - Post Loop Lorem ipsum dolor sit amet, consectetur adipiscing elit. Ut elit tellus, luctus nec ullamcorper mattis, pulvinar dapibus leo. - [Hero 1](https://swegan.se/?elementor_library=hero-1) - Quality combined with sustainable, smart and green manufacturing Crafting wide bandgap semiconductors for a better worldDisruptive technology enables the most innovative applications Providing robust, high-performanceg GaN-on-SiC material: Discover how SweGaN’s custom epiwafers boost device performance for a multitude of applications and industries - [Option 2 - Cards](https://swegan.se/?elementor_library=option-2-cards) - IDM/Foundry Furnishing customized materials: roviding premium quality customized materials, SweGaN delivers the product integrity foundries require to drive future business. Fabless Bespoke fabless services: Offering tailored services to boost development, design and sale of hardware devices and chips for the global market. System Manufacturers Benchmark materials: Supplying the benchmark materials that enable high-performance devices, learn - [Job Post Loop Template](https://swegan.se/?elementor_library=job-post-loop-template) - Job Post Loop Template Lorem ipsum dolor sit amet, consectetur adipiscing elit. Ut elit tellus, luctus nec ullamcorper mattis, pulvinar dapibus leo. - [Footer](https://swegan.se/?elementor_library=footer) - Content area ## Careers - [Head of Sales](https://swegan.se/career/head-of-sales/) - Company Introduction SweGaN is a European semiconductor manufacturer that develops and produces customer-made materials and high-performance epitaxial wafers of gallium nitride for manufacturers of conductive components and devices. We develop and deliver unique material solutions based on the company's groundbreaking GaN epitaxial technology. SweGaN's products are used for a wide range of applications, including 5G - [Produktionstekniker](https://swegan.se/career/produktionstekniker/) - Sök rollen som Produktionstekniker på SweGaN. Arbeta i labbmiljö med produktion, karakterisering och kvalitetskontroll i ett växande högteknikbolag. - [Sales Assistant](https://swegan.se/career/sales-assistant/) - Join SweGaN as a Sales Assistant supporting global customers, managing quotes, orders, and invoicing in a fast‑growing high‑tech environment. ## Categories - [Uncategorized](https://swegan.se/category/uncategorized/) - [Events](https://swegan.se/category/events/) - [News and Press](https://swegan.se/category/news/) - [In the Media](https://swegan.se/category/in-the-media/) - [Nyheter](https://swegan.se/category/nyheter/) ## Tags - [#epitaxial](https://swegan.se/tag/epitaxial/) - [#GaN](https://swegan.se/tag/gan/) - [#ny teknik](https://swegan.se/tag/ny-teknik/) - [#QuanFine](https://swegan.se/tag/quanfine/) - [epitaxial wafers](https://swegan.se/tag/epitaxial-wafers/) - [GaN-on-SiC](https://swegan.se/tag/gan-on-sic/) - [power electronics](https://swegan.se/tag/power-electronics/) - [satellite communication](https://swegan.se/tag/satellite-communication/) - [#epiwafer](https://swegan.se/tag/epiwafer/) - [Agneta Franksson](https://swegan.se/tag/agneta-franksson/) - [#Jr-Tai Chen](https://swegan.se/tag/jr-tai-chen/) - [Björn Hult](https://swegan.se/tag/bjorn-hult/) - [buffer-free](https://swegan.se/tag/buffer-free/) - [Chalmers University of Technology](https://swegan.se/tag/chalmers-university-of-technology/) - [Electron Device Letters](https://swegan.se/tag/electron-device-letters/) - [Mattias Thorsell](https://swegan.se/tag/mattias-thorsell/) - [MIS-HEMT](https://swegan.se/tag/mis-hemt/) - [Niklas Rorsman](https://swegan.se/tag/niklas-rorsman/) - [power devices](https://swegan.se/tag/power-devices/) - [Atlantic Bridge](https://swegan.se/tag/atlantic-bridge/) - [David Lam](https://swegan.se/tag/david-lam/) - [Fred Change](https://swegan.se/tag/fred-change/) - [Henrik Tölander](https://swegan.se/tag/henrik-tolander/) - [Intertech Ventures](https://swegan.se/tag/intertech-ventures/) - [MediaTek](https://swegan.se/tag/mediatek/) - [Mount Wilson Ventures](https://swegan.se/tag/mount-wilson-ventures/) - [STOAF](https://swegan.se/tag/stoaf/) - [Walter Wolmuth](https://swegan.se/tag/walter-wolmuth/) - [bandgap](https://swegan.se/tag/bandgap/) - [European Chips Act](https://swegan.se/tag/european-chips-act/) - [gallium nitride](https://swegan.se/tag/gallium-nitride/) - [semiconductors](https://swegan.se/tag/semiconductors/) - [SiC](https://swegan.se/tag/sic/) - [silicon carbide](https://swegan.se/tag/silicon-carbide/) - [wide band gap](https://swegan.se/tag/wide-band-gap/) - [Innovative Materials Arena](https://swegan.se/tag/innovative-materials-arena/) - [epitaxial structures](https://swegan.se/tag/epitaxial-structures/) - [Galia Pozina](https://swegan.se/tag/galia-pozina/) - [GaN-based epitaxial structures](https://swegan.se/tag/gan-based-epitaxial-structures/) - [Linköping University](https://swegan.se/tag/linkoping-university/) - [Swedish Foundation for Strategic Research](https://swegan.se/tag/swedish-foundation-for-strategic-research/) - [epitaxial epiwafers](https://swegan.se/tag/epitaxial-epiwafers/) - [RFHIC](https://swegan.se/tag/rfhic/) - [semiconductor materials](https://swegan.se/tag/semiconductor-materials/) - [GaN material](https://swegan.se/tag/gan-material/) - [mission](https://swegan.se/tag/mission/) - [vision](https://swegan.se/tag/vision/) - [Power Semiconductors Weekly](https://swegan.se/tag/power-semiconductors-weekly/) - [QuanFINE](https://swegan.se/tag/quanfine-2/) - [GaN](https://swegan.se/tag/gan-2/) - [Navigare Ventures](https://swegan.se/tag/navigare-ventures/) - [Wallenberg Investments AB](https://swegan.se/tag/wallenberg-investments-ab/) - [Wafer Works](https://swegan.se/tag/wafer-works/) - [Ignite Innovation](https://swegan.se/tag/ignite-innovation/) - [BRV Capital Management](https://swegan.se/tag/brv-capital-management/) - [Lifelike Capital](https://swegan.se/tag/lifelike-capital/) - [Closer](https://swegan.se/tag/closer/) - [LEO](https://swegan.se/tag/leo/) - [GEO](https://swegan.se/tag/geo/) - [RF](https://swegan.se/tag/rf/) - [ICNS15](https://swegan.se/tag/icns15/) - [AIGaN Back Barrier](https://swegan.se/tag/aigan-back-barrier/) - [defense radar](https://swegan.se/tag/defense-radar/) - [power supplies](https://swegan.se/tag/power-supplies/) - [innovation](https://swegan.se/tag/innovation/) - [Business Sweden](https://swegan.se/tag/business-sweden/) - [IMS2025](https://swegan.se/tag/ims2025/) - [IEEE](https://swegan.se/tag/ieee/) - [CS Mantech 2025](https://swegan.se/tag/cs-mantech-2025/) - [semiconductor manufacturing](https://swegan.se/tag/semiconductor-manufacturing/) - [EU](https://swegan.se/tag/eu/) - [partnerships](https://swegan.se/tag/partnerships/) - [green transition](https://swegan.se/tag/green-transition/) - [Ebba Bush](https://swegan.se/tag/ebba-bush/) - [IMA](https://swegan.se/tag/ima/) - [Innovation Materials Arena](https://swegan.se/tag/innovation-materials-arena/) - [Taipei Mission in Sweden](https://swegan.se/tag/taipei-mission-in-sweden/) - [Mikael Sanfridson](https://swegan.se/tag/mikael-sanfridson/) - [Lena Miranda](https://swegan.se/tag/lena-miranda/) - [Linda Robinson](https://swegan.se/tag/linda-robinson/) - [Mr. Klement Gu](https://swegan.se/tag/mr-klement-gu/) - [Webinar](https://swegan.se/tag/webinar/) - [EuMW](https://swegan.se/tag/eumw/) - [Featured](https://swegan.se/tag/featured/)