CoolHEMT

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This project has received funding from the European Union’s Horizon 2020 research and innovation programme under the grant agreement No 823260.

Context

An increasing demand in the communication sector the past decade has led to an explosive growth in global mobil data traffic. At this rate, telecommunications will undoubtedly face some major issues: First, building out the network with existing Si-based technology will give rise to a major environmental impact; Second, the current technology is limited in performance especially at higher frequencies. Existing devices efficiency and bandwidth fail to match the increasing demands.

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Photo of the CoolHEMT structure

SweGaN contribution

SweGaN has designed a pionnering epitaxial GaN growth method and production tool providing excellent quality in a cost-effective manner. The latter is required for volume production. This resulted in the development of a very efficient high electron mobility transistor (HEMT) structure: the QuanFINE ™, an undoped HEMT with unprecedented properties. (See in ‘Technology’)

Thus, SweGaN has decided to launch the « CoolHEMT  project » to optimize and commercialize this new GaN-on-SiC structure.