SweGaN brings QuanFINE GaN-on-SiC epi to ESA project Kassiopeia

Epitaxial wafer foundry SweGaN AB of Linköping, Sweden is partnering with Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH) of Berlin, Germany and University of Bristol in the project Kassiopeia, which is funded under the European Space Agency (ESA) ARTES Advanced Technology Program ‘European Ka-band high power solid-state technology for active antennas’ and includes a focus on SweGaN’s QuanFINE gallium nitride on silicon carbide (GaN-on-SiC) epitaxial materials to help boost device efficiency for Ka-band applications…

Read more on “Semiconductor Today”